JPS6489435A - Dissolution removing method of resist - Google Patents

Dissolution removing method of resist

Info

Publication number
JPS6489435A
JPS6489435A JP24380987A JP24380987A JPS6489435A JP S6489435 A JPS6489435 A JP S6489435A JP 24380987 A JP24380987 A JP 24380987A JP 24380987 A JP24380987 A JP 24380987A JP S6489435 A JPS6489435 A JP S6489435A
Authority
JP
Japan
Prior art keywords
resist
substrate
liquid
component
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24380987A
Other languages
Japanese (ja)
Inventor
Yoshiharu Takizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP24380987A priority Critical patent/JPS6489435A/en
Publication of JPS6489435A publication Critical patent/JPS6489435A/en
Pending legal-status Critical Current

Links

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To obtain a clean substrate without a residual resist component, by projecting ultraviolet rays in an atmosphere including oxygen, treating the surface with etching liquid, whose main component is fluoric acid, and thereafter performing resist releasing treatment. CONSTITUTION:A resist pattern 6 is formed on a substrate by developing a sample with developing liquid. Thereafter, the resist pattern 6 is used as a mask, etching beams 7 are projected, and a thin film 2 is etched. A thin film pattern 8 is formed on the substrate 1. At the same time, an affected layer 9 is formed on the resist 6. Then, ultraviolet rays 10 are projected in an atmosphere including oxygen. The affected layer 9 is made to be a reformed layer 11. The reformed layer 11 is removed with etching liquid 12, whose main component is fluoric acid. The resist pattern 6 is removed by using ordinary resist releasing liquid 13. Thus the clean substrate without a residual resist component can be obtained.
JP24380987A 1987-09-30 1987-09-30 Dissolution removing method of resist Pending JPS6489435A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24380987A JPS6489435A (en) 1987-09-30 1987-09-30 Dissolution removing method of resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24380987A JPS6489435A (en) 1987-09-30 1987-09-30 Dissolution removing method of resist

Publications (1)

Publication Number Publication Date
JPS6489435A true JPS6489435A (en) 1989-04-03

Family

ID=17109256

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24380987A Pending JPS6489435A (en) 1987-09-30 1987-09-30 Dissolution removing method of resist

Country Status (1)

Country Link
JP (1) JPS6489435A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0795895A3 (en) * 1996-03-07 1998-12-02 Nec Corporation Semiconductor device with a plurality of stacked wiring layers and manufacturing method of the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0795895A3 (en) * 1996-03-07 1998-12-02 Nec Corporation Semiconductor device with a plurality of stacked wiring layers and manufacturing method of the same

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