JPS6422028A - Forming method for pattern - Google Patents
Forming method for patternInfo
- Publication number
- JPS6422028A JPS6422028A JP62178676A JP17867687A JPS6422028A JP S6422028 A JPS6422028 A JP S6422028A JP 62178676 A JP62178676 A JP 62178676A JP 17867687 A JP17867687 A JP 17867687A JP S6422028 A JPS6422028 A JP S6422028A
- Authority
- JP
- Japan
- Prior art keywords
- region
- resist
- type photo
- exposure
- positive type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To use a positive type photo-resist even as a negative type photo-resist by applying the positive type photo-resist onto a substrate, conducting the exposure of a desired pattern, performing proper whole surface exposure in a specified region in the positive type photo-resist again and executing developing treatment to the state. CONSTITUTION:A positive type photo-resist layer 12 is applied and formed onto the surface of a semiconductor substrate 11, and diffraction grating exposure 13 is conducted extending over the whole region. Intense whole surface exposure 16 is performed selectively to a required region 15 to be flatly etched through a mask 14 through a normal photolithographic technique, and whole surface exposure 19 is executed weakly to a region 18. The developing time is controlled by using a method such as a diffraction grating monitor, and the whole surface-exposed region 18 is developed up to the proper quantity of development. Selective etching is conducted, employing the resist layers 21a, 21b as masks. Accordingly, a flat etching groove 22 is shaped in the region 15, a diffraction grating 1 in the region 18 and a flat surface 23 not etched in a region 20.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62178676A JPS6422028A (en) | 1987-07-17 | 1987-07-17 | Forming method for pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62178676A JPS6422028A (en) | 1987-07-17 | 1987-07-17 | Forming method for pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6422028A true JPS6422028A (en) | 1989-01-25 |
Family
ID=16052609
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62178676A Pending JPS6422028A (en) | 1987-07-17 | 1987-07-17 | Forming method for pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6422028A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5285343A (en) * | 1989-10-13 | 1994-02-08 | Hitachi, Ltd. | Magnetic disk with surface protective layer having convex portions and magnetic disk apparatus including such a magnetic disk |
JPH08338918A (en) * | 1995-04-12 | 1996-12-24 | Sumitomo Electric Ind Ltd | Formation of optical waveguide type diffraction grating and forming device therefor |
JP2013016650A (en) * | 2011-07-04 | 2013-01-24 | Sumitomo Electric Ind Ltd | Formation method of sampled grating and manufacturing method of semiconductor laser |
-
1987
- 1987-07-17 JP JP62178676A patent/JPS6422028A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5285343A (en) * | 1989-10-13 | 1994-02-08 | Hitachi, Ltd. | Magnetic disk with surface protective layer having convex portions and magnetic disk apparatus including such a magnetic disk |
JPH08338918A (en) * | 1995-04-12 | 1996-12-24 | Sumitomo Electric Ind Ltd | Formation of optical waveguide type diffraction grating and forming device therefor |
JP2013016650A (en) * | 2011-07-04 | 2013-01-24 | Sumitomo Electric Ind Ltd | Formation method of sampled grating and manufacturing method of semiconductor laser |
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