JPS5584938A - Production of photo mask - Google Patents

Production of photo mask

Info

Publication number
JPS5584938A
JPS5584938A JP16546478A JP16546478A JPS5584938A JP S5584938 A JPS5584938 A JP S5584938A JP 16546478 A JP16546478 A JP 16546478A JP 16546478 A JP16546478 A JP 16546478A JP S5584938 A JPS5584938 A JP S5584938A
Authority
JP
Japan
Prior art keywords
film
mask
remaining
positioning
electron beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16546478A
Other languages
Japanese (ja)
Inventor
Shunichi Naka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP16546478A priority Critical patent/JPS5584938A/en
Publication of JPS5584938A publication Critical patent/JPS5584938A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

PURPOSE:To correct at high precision and obtain a photo mask for integrated circuit device having fine and delicate pattern, by positioning the light shielding film remaining on a mask substrate by using electron beam, when producing patterns which become photo mask. CONSTITUTION:The position 5 (X1, Y1) of a light shielding film (Cr film) remaining in a pattern region 2 on a light transmitting substrate 1 is detected by reference of positioning lmarks 41, 42 provided on outer Cr film 3. The pattern 2 is covered with a covered with a conductive thin film 6, and a resist 8 is further provided on the film 6. Prior to forming the film 6, the film 3 is formed with an insulating film 7, and the film 8 is provided so that the positioning marks 41, 42 may not be filled with the film 6, then the film 7 covering the marks 41, 42 is removed. A secondary electron detector is fitted to electron beam exposure device, and accurate positioning is achieved by the difference eta of secondary reflections of the Cr film 3 and substrate 1. Then, using a fine electron beam, the part of remaining light shielding film 5 is radiated, and developed, and the resist 8 is removed. Then, using the film 8 as the mask, the remaining Cr film 5 is removed, then the films 7, 6, 8 are all removed, so that a mask is completed.
JP16546478A 1978-12-20 1978-12-20 Production of photo mask Pending JPS5584938A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16546478A JPS5584938A (en) 1978-12-20 1978-12-20 Production of photo mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16546478A JPS5584938A (en) 1978-12-20 1978-12-20 Production of photo mask

Publications (1)

Publication Number Publication Date
JPS5584938A true JPS5584938A (en) 1980-06-26

Family

ID=15812906

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16546478A Pending JPS5584938A (en) 1978-12-20 1978-12-20 Production of photo mask

Country Status (1)

Country Link
JP (1) JPS5584938A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5870226A (en) * 1981-10-23 1983-04-26 Nec Kyushu Ltd Photomask
JPS63299124A (en) * 1987-05-29 1988-12-06 Hitachi Ltd X-ray exposure mask

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5870226A (en) * 1981-10-23 1983-04-26 Nec Kyushu Ltd Photomask
JPS63299124A (en) * 1987-05-29 1988-12-06 Hitachi Ltd X-ray exposure mask

Similar Documents

Publication Publication Date Title
JPS5630129A (en) Manufacture of photomask
JPS5584938A (en) Production of photo mask
JPS57106128A (en) Forming method for pattern
JPS5492061A (en) Micropattern forming method
JPS542668A (en) Manufacture of semiconductor device
JPS5621328A (en) Method of making pattern
JPS5616129A (en) Pattern forming method
JPS56137632A (en) Pattern forming
JPS5772327A (en) Formation of resist pattern
JPS5556629A (en) Pattern forming method
JPS5616140A (en) Production of photomask for contraction
JPS6421450A (en) Production of mask
JPS5596952A (en) Production of photomask
JPS5752056A (en) Photomask
JPS5741637A (en) Microstep tablet
JPS5748731A (en) Manufacture of mask
JPS5388728A (en) Method of forming pattern
JPS53136969A (en) Photomask
JPS55165631A (en) Manufacture of semiconductor device
JPS57212445A (en) Production of photomask
JPS5492063A (en) Manufacture of semiconductor device
JPS5638475A (en) Fabrication of photomask
JPS55156329A (en) Manufacture for integrated element
JPS56107241A (en) Dry etching method
JPS56107555A (en) Detection of position of electron beam