JPS55165631A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS55165631A JPS55165631A JP7371579A JP7371579A JPS55165631A JP S55165631 A JPS55165631 A JP S55165631A JP 7371579 A JP7371579 A JP 7371579A JP 7371579 A JP7371579 A JP 7371579A JP S55165631 A JPS55165631 A JP S55165631A
- Authority
- JP
- Japan
- Prior art keywords
- film
- resist
- electron beam
- quinone
- resolution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
Abstract
PURPOSE:To increase the sensitivity and to prevent the diminution of a film without impairing the resolution of a positive resist, by stacking a negative resist on a quinone-diazo series positive resist, exposing the resist to an electron beam, and developing the resist. CONSTITUTION:The quinone-diazo series positive resist 2 is applied on a substrate 1, and the negative resist 3 is stacked thereon. A speficied pattern 3' is exposed to an electron beam 4. If required, a ultraviolet ray 5 is irradiated all over the surface, and the resist 2 is fully sensitized. Since the resist 3 is not sensitized to the ultraviolet ray, it is not changed. The film 3 is developed and a film 3' is obtained. The film 2 is developed with the film 3' as a mask, and a film 2' is obtained. Since the upper surface of the film 2' is covered by the film 3', the film is not diminished. Therefore, amount of irradiation of the electron beam can be greatly decreased, irradiation time is greatly shortened, working efficiency is improved, fogging is not generated, and the resolution is not impaired.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7371579A JPS588131B2 (en) | 1979-06-12 | 1979-06-12 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7371579A JPS588131B2 (en) | 1979-06-12 | 1979-06-12 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55165631A true JPS55165631A (en) | 1980-12-24 |
JPS588131B2 JPS588131B2 (en) | 1983-02-14 |
Family
ID=13526186
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7371579A Expired JPS588131B2 (en) | 1979-06-12 | 1979-06-12 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS588131B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56164531A (en) * | 1980-05-21 | 1981-12-17 | Hitachi Ltd | Manufacture of semiconductor |
JPS6221102A (en) * | 1985-07-19 | 1987-01-29 | Matsushita Electric Ind Co Ltd | Manufacture of fresnel lens |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4669811A (en) * | 1983-11-17 | 1987-06-02 | Pilkington P.E. Limited | Optical filtering apparatus |
-
1979
- 1979-06-12 JP JP7371579A patent/JPS588131B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56164531A (en) * | 1980-05-21 | 1981-12-17 | Hitachi Ltd | Manufacture of semiconductor |
JPS6221102A (en) * | 1985-07-19 | 1987-01-29 | Matsushita Electric Ind Co Ltd | Manufacture of fresnel lens |
Also Published As
Publication number | Publication date |
---|---|
JPS588131B2 (en) | 1983-02-14 |
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