JPS56164531A - Manufacture of semiconductor - Google Patents

Manufacture of semiconductor

Info

Publication number
JPS56164531A
JPS56164531A JP6647880A JP6647880A JPS56164531A JP S56164531 A JPS56164531 A JP S56164531A JP 6647880 A JP6647880 A JP 6647880A JP 6647880 A JP6647880 A JP 6647880A JP S56164531 A JPS56164531 A JP S56164531A
Authority
JP
Japan
Prior art keywords
electron beam
substrate
resist
emission
coated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6647880A
Other languages
Japanese (ja)
Inventor
Kazumitsu Nakamura
Soichiro Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6647880A priority Critical patent/JPS56164531A/en
Publication of JPS56164531A publication Critical patent/JPS56164531A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To enhance the photosensitivity of a resist by emitting an electron beam to a resist film coated on a substrate to melt the part, forming a microminiature pattern by emitting photon of ion beam, electron beam, ultraviolet ray, X-ray or the like to the overall surface before or after the emission of the beam. CONSTITUTION:An electron beam from an electron gun is emitted through a lens, a diaphragm, a deflector or the like to a substrate placed on a stage and coated with a resist as ordinarily executed. When the emitted region is then molten to form a microminiature pattern of the resist film on a substrate, the following steps are performed. That is, 3X10<-5>/cm<3> of photon such as ion beam, electron beam, ultraviolet ray, X-ray or the like is emitted to the resist film 18 coated on the substrate 19 before or after the emission of the electron beam, and the thickness of the remaining film is restricted to the degree of larger than 0.5mum. Thus, the photosensitivity of the film is enhanced, and an extreme microminiature pattern can be obtained by the emission of the electron beam.
JP6647880A 1980-05-21 1980-05-21 Manufacture of semiconductor Pending JPS56164531A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6647880A JPS56164531A (en) 1980-05-21 1980-05-21 Manufacture of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6647880A JPS56164531A (en) 1980-05-21 1980-05-21 Manufacture of semiconductor

Publications (1)

Publication Number Publication Date
JPS56164531A true JPS56164531A (en) 1981-12-17

Family

ID=13316920

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6647880A Pending JPS56164531A (en) 1980-05-21 1980-05-21 Manufacture of semiconductor

Country Status (1)

Country Link
JP (1) JPS56164531A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5766633A (en) * 1980-10-13 1982-04-22 Oki Electric Ind Co Ltd Pattern formation of fine processing resist
JPS60171726A (en) * 1984-02-06 1985-09-05 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of producing semiconductor device
JPS61287232A (en) * 1985-06-14 1986-12-17 Sony Corp Resist exposing method
JPS63185022A (en) * 1987-01-27 1988-07-30 Fujitsu Ltd Forming method for pattern
JPS63269529A (en) * 1987-04-28 1988-11-07 Canon Inc Charged particle beam device
JPS63269530A (en) * 1987-04-28 1988-11-07 Canon Inc Charged particle beam device
CN102972099A (en) * 2010-07-09 2013-03-13 Bsr股份有限公司 X-ray generating device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52117077A (en) * 1976-03-29 1977-10-01 Fujitsu Ltd Electron beam-exposing method
JPS53147465A (en) * 1977-05-27 1978-12-22 Fujitsu Ltd Forming method of patterns for lift-off
JPS55138232A (en) * 1979-04-12 1980-10-28 Chiyou Lsi Gijutsu Kenkyu Kumiai Drawing device
JPS55165631A (en) * 1979-06-12 1980-12-24 Fujitsu Ltd Manufacture of semiconductor device
JPS561356A (en) * 1979-06-20 1981-01-09 Anritsu Corp Logical-signal detection circuit

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52117077A (en) * 1976-03-29 1977-10-01 Fujitsu Ltd Electron beam-exposing method
JPS53147465A (en) * 1977-05-27 1978-12-22 Fujitsu Ltd Forming method of patterns for lift-off
JPS55138232A (en) * 1979-04-12 1980-10-28 Chiyou Lsi Gijutsu Kenkyu Kumiai Drawing device
JPS55165631A (en) * 1979-06-12 1980-12-24 Fujitsu Ltd Manufacture of semiconductor device
JPS561356A (en) * 1979-06-20 1981-01-09 Anritsu Corp Logical-signal detection circuit

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5766633A (en) * 1980-10-13 1982-04-22 Oki Electric Ind Co Ltd Pattern formation of fine processing resist
JPS6160574B2 (en) * 1980-10-13 1986-12-22 Oki Electric Ind Co Ltd
JPS60171726A (en) * 1984-02-06 1985-09-05 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of producing semiconductor device
JPH0143451B2 (en) * 1984-02-06 1989-09-20 Intaanashonaru Bijinesu Mashiinzu Corp
JPS61287232A (en) * 1985-06-14 1986-12-17 Sony Corp Resist exposing method
JPS63185022A (en) * 1987-01-27 1988-07-30 Fujitsu Ltd Forming method for pattern
JPH0551169B2 (en) * 1987-01-27 1993-07-30 Fujitsu Ltd
JPS63269529A (en) * 1987-04-28 1988-11-07 Canon Inc Charged particle beam device
JPS63269530A (en) * 1987-04-28 1988-11-07 Canon Inc Charged particle beam device
CN102972099A (en) * 2010-07-09 2013-03-13 Bsr股份有限公司 X-ray generating device

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