JPS55138232A - Drawing device - Google Patents

Drawing device

Info

Publication number
JPS55138232A
JPS55138232A JP4510679A JP4510679A JPS55138232A JP S55138232 A JPS55138232 A JP S55138232A JP 4510679 A JP4510679 A JP 4510679A JP 4510679 A JP4510679 A JP 4510679A JP S55138232 A JPS55138232 A JP S55138232A
Authority
JP
Japan
Prior art keywords
wafer
irradiated
resist
electromagnetic wave
irradiating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4510679A
Other languages
Japanese (ja)
Inventor
Kyusaku Nishioka
Toshiaki Shinozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP4510679A priority Critical patent/JPS55138232A/en
Publication of JPS55138232A publication Critical patent/JPS55138232A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To shorten drawing time and reduce damage to elements by irradiating an electromagnetic wave having a specified wavelength when a pattern is drawn by irradiating an electron beam or ion beam on a resist film coated on a wafer. CONSTITUTION:An electron beam or an ion beam is irradiated on a specified position of a resist of methylmethacrylate coated on a wafer 4 through a deflection system 3, and a pattern is drawn. At this time, however, electromagnetic wave 2, such as infrared rays, having a wavelength 1-8mum, is irradiated sumultaneously on the entire surface of the wafer 4, and by raising the temperature to about 100 deg.C, the sensitivity of the resist is increased. Further, if the temperature of the entire wafer rises and the positioning precision is lowered, electromagnetic wave 2 is irradiated only on the part which is irradiated by beam 1. By this, the sensitivity of the resist is increased, processing time is shortened, and the wafer is not damaged.
JP4510679A 1979-04-12 1979-04-12 Drawing device Pending JPS55138232A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4510679A JPS55138232A (en) 1979-04-12 1979-04-12 Drawing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4510679A JPS55138232A (en) 1979-04-12 1979-04-12 Drawing device

Publications (1)

Publication Number Publication Date
JPS55138232A true JPS55138232A (en) 1980-10-28

Family

ID=12710016

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4510679A Pending JPS55138232A (en) 1979-04-12 1979-04-12 Drawing device

Country Status (1)

Country Link
JP (1) JPS55138232A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56164531A (en) * 1980-05-21 1981-12-17 Hitachi Ltd Manufacture of semiconductor
JPS57170526A (en) * 1981-04-14 1982-10-20 Fujitsu Ltd Exposing method and device for charged beam
JPS58106827A (en) * 1981-12-18 1983-06-25 Fujitsu Ltd Image drawing method by electron beam
JPS6230321A (en) * 1985-07-31 1987-02-09 Toshiba Corp Method and apparatus for exposure by electron beam

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56164531A (en) * 1980-05-21 1981-12-17 Hitachi Ltd Manufacture of semiconductor
JPS57170526A (en) * 1981-04-14 1982-10-20 Fujitsu Ltd Exposing method and device for charged beam
JPS6320375B2 (en) * 1981-04-14 1988-04-27 Fujitsu Ltd
JPS58106827A (en) * 1981-12-18 1983-06-25 Fujitsu Ltd Image drawing method by electron beam
JPS6230321A (en) * 1985-07-31 1987-02-09 Toshiba Corp Method and apparatus for exposure by electron beam

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