JPS55113048A - Image forming method - Google Patents
Image forming methodInfo
- Publication number
- JPS55113048A JPS55113048A JP2154079A JP2154079A JPS55113048A JP S55113048 A JPS55113048 A JP S55113048A JP 2154079 A JP2154079 A JP 2154079A JP 2154079 A JP2154079 A JP 2154079A JP S55113048 A JPS55113048 A JP S55113048A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- image
- development
- temp
- irradiated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
Abstract
PURPOSE:To form a fog-free resist image of high accuracy by heat treating a negative type resist with an insolubilized image formed by electron beam irradiation prior to development to improve the thickness of a resist film and raise the gamma value after development. CONSTITUTION:An electron beam-sensitive negative type resist such as a glycidyl methacrylate (co)polymer or polystyrene (derivative) coated on a substrate is irradiated with electron beams in such a dose amt. that no crosslinking reaction is induced at the periphery of the irradiated region, forming an insolubilized image. The resist with the image formed is then heat treated at a temp. from about 30 deg.C above the glass transition temp. (Tg) of the resist to about 30 deg.C below the temp. prior to development. By this treatment the crosslinking degree of the irradiated portion of the resist film can be enhanced without deteriorating the solubility of the unirradiated portion to a developer, and a resist image of high accuracy can be formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2154079A JPS55113048A (en) | 1979-02-26 | 1979-02-26 | Image forming method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2154079A JPS55113048A (en) | 1979-02-26 | 1979-02-26 | Image forming method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55113048A true JPS55113048A (en) | 1980-09-01 |
Family
ID=12057796
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2154079A Pending JPS55113048A (en) | 1979-02-26 | 1979-02-26 | Image forming method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55113048A (en) |
-
1979
- 1979-02-26 JP JP2154079A patent/JPS55113048A/en active Pending
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