JPS5694630A - Etching method using ion-beam - Google Patents

Etching method using ion-beam

Info

Publication number
JPS5694630A
JPS5694630A JP17072079A JP17072079A JPS5694630A JP S5694630 A JPS5694630 A JP S5694630A JP 17072079 A JP17072079 A JP 17072079A JP 17072079 A JP17072079 A JP 17072079A JP S5694630 A JPS5694630 A JP S5694630A
Authority
JP
Japan
Prior art keywords
mark
etching
organic
region
ion beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17072079A
Other languages
Japanese (ja)
Inventor
Masaki Ito
Sotaro Edokoro
Hiroshi Gokan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP17072079A priority Critical patent/JPS5694630A/en
Publication of JPS5694630A publication Critical patent/JPS5694630A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Drying Of Semiconductors (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To position an etching pattern by removing an organic-substance layer on a positional reference mark through etching by application of an O2 ion beam, applying later the beam to the mark and thereby detecting the position thereof. CONSTITUTION:By application of the O2 ion beam to a region 31 containing the mark 221, the organic-substance layer within the region is removed through etching. Next, scanning 224 is made by means of the O2 ion beam in such a manner than it traverses the mark and values obtained by turnaround scanning are averaged, whereby the position of the mark is determined. In this way, there is no organic- substance layer on the mark 221 from the beginning on the occasion of detection of the position of the mark and, therefore, the lack of uniformity of the line of region of the mark is eliminated. Accordingly, highly-precise detection of the mark position can be performed with few scannings and thereby the etching pattern can be positioned with high precision.
JP17072079A 1979-12-27 1979-12-27 Etching method using ion-beam Pending JPS5694630A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17072079A JPS5694630A (en) 1979-12-27 1979-12-27 Etching method using ion-beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17072079A JPS5694630A (en) 1979-12-27 1979-12-27 Etching method using ion-beam

Publications (1)

Publication Number Publication Date
JPS5694630A true JPS5694630A (en) 1981-07-31

Family

ID=15910138

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17072079A Pending JPS5694630A (en) 1979-12-27 1979-12-27 Etching method using ion-beam

Country Status (1)

Country Link
JP (1) JPS5694630A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59168652A (en) * 1983-03-16 1984-09-22 Hitachi Ltd Method and apparatus for correcting element
JPS63170940A (en) * 1987-12-02 1988-07-14 Hitachi Ltd Correction of device
JPS63296241A (en) * 1987-12-02 1988-12-02 Hitachi Ltd Element correction device
JPS63305358A (en) * 1987-06-05 1988-12-13 Seiko Instr & Electronics Ltd Method for working pattern film
JPH06134582A (en) * 1992-09-11 1994-05-17 Hitachi Ltd Ion beam working method
JPH06244178A (en) * 1993-11-15 1994-09-02 Hitachi Ltd Ic processing device
JPH06244179A (en) * 1993-11-15 1994-09-02 Hitachi Ltd Method for modifying ic
JPH06244177A (en) * 1993-11-15 1994-09-02 Hitachi Ltd Method for modifying ic
JPH06295910A (en) * 1993-03-26 1994-10-21 Hitachi Ltd Ic element and connection of wiring in ic element
JPH06302603A (en) * 1993-03-26 1994-10-28 Hitachi Ltd Ic device
JPH08153721A (en) * 1995-04-26 1996-06-11 Hitachi Ltd Method and device for correcting ic element
EP1424723A2 (en) * 2002-11-26 2004-06-02 FEI Company Ion beam for target recovery

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59168652A (en) * 1983-03-16 1984-09-22 Hitachi Ltd Method and apparatus for correcting element
JPH0514416B2 (en) * 1983-03-16 1993-02-25 Hitachi Ltd
JPS63305358A (en) * 1987-06-05 1988-12-13 Seiko Instr & Electronics Ltd Method for working pattern film
JPH054660B2 (en) * 1987-06-05 1993-01-20 Seiko Instr & Electronics
JPS63170940A (en) * 1987-12-02 1988-07-14 Hitachi Ltd Correction of device
JPS63296241A (en) * 1987-12-02 1988-12-02 Hitachi Ltd Element correction device
JPH0771754B2 (en) * 1992-09-11 1995-08-02 株式会社日立製作所 Ion beam processing method
JPH06134582A (en) * 1992-09-11 1994-05-17 Hitachi Ltd Ion beam working method
JPH06295910A (en) * 1993-03-26 1994-10-21 Hitachi Ltd Ic element and connection of wiring in ic element
JPH06302603A (en) * 1993-03-26 1994-10-28 Hitachi Ltd Ic device
JPH06244178A (en) * 1993-11-15 1994-09-02 Hitachi Ltd Ic processing device
JPH06244179A (en) * 1993-11-15 1994-09-02 Hitachi Ltd Method for modifying ic
JPH06244177A (en) * 1993-11-15 1994-09-02 Hitachi Ltd Method for modifying ic
JP2829232B2 (en) * 1993-11-15 1998-11-25 株式会社日立製作所 IC device processing equipment
JPH08153721A (en) * 1995-04-26 1996-06-11 Hitachi Ltd Method and device for correcting ic element
JP2829254B2 (en) * 1995-04-26 1998-11-25 株式会社日立製作所 IC element repair method and device
EP1424723A2 (en) * 2002-11-26 2004-06-02 FEI Company Ion beam for target recovery
EP1424723A3 (en) * 2002-11-26 2009-08-05 FEI Company Ion beam for target recovery

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