JP2829254B2 - IC element repair method and device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [0001] BACKGROUND OF THE INVENTION 1. Field of the Invention
A method of correcting an IC element for correcting a wiring pattern and a method thereof
Related to the device. [0002] 2. Description of the Related Art Semiconductor integrated circuits, GaAs devices, magnetic valves
Pattern for flash memory, Josephson devices, etc.
The width and wiring width are steadily miniaturized. That is, 3
A device with a width of 2 μm to 2 μm is realized, and 1.5 μm
m, 1 μm, and submicron wiring width devices are being developed.
There are two. Conventionally, these devices are in the device development stage.
Cutting of wiring for debugging, and production of devices
Remedy of defective parts, writing, resistance value, capacitance,
Means such as disconnection and connection of a part of the element for adjustment are taken
I have been. [0003] As a typical example, a debugging method is described below.
The cutting of the Al wiring will be described. The following example shows that Au
It is clear that it can also be applied to wiring such as Poli Silicon
Is. [0004] Semiconductor integrated circuits (hereinafter referred to as "IC")
Design failure and process failure in the design and development process
Therefore, the prototype chip does not operate as it is
There are many. In this case, in order to determine
It is necessary to perform operation tests etc. by cutting the wiring on the sides.
You. For a pattern of 5 μm or more,
To the manipulator while observing the device with a microscope
The method of cutting with a thin metal needle attached
Was used. However, this method has a low success rate
Skill is required.
It is possible. Figure 1 shows the cutting of the IC wiring by laser.
1 shows an apparatus. Laser beam emitted from laser oscillator 1
1a is a set of lenses 3a and 3b after being reflected by the mirror 2.
Beam diameter is adjusted by beam expander 3
Expanded and reduced rectangular pattern by variable slits 5 and 6
A sample in which a small projection image is placed on a stage 9 by a lens 7
8 is imaged. In this case, the reference light lamp 2
The light from a is reflected by the concave mirror 2b,
The beam is made more parallel and follows the same path as the laser beam.
This forms an image on the wiring.
Arrangement etc. become possible. That is, in FIG.
The line portion 11 is adjacent to the portion 10 having no wiring. That is, the cross section is as shown in FIG.
SiO on the Si substrate 13_TwoWiring 1 through the insulating layer 14
5 are formed. In FIG.
The images 12 of the lits 5 and 6 are projected, but the width of the slit is reduced.
The arrangement to be adjusted and cut by the micrometers 5a and 6a
Adjust to the width of line 11. Then irradiate the laser
The laser beam forms an image at exactly the same position 12 and removes this portion.
You. In this case, the following problems existed. Ie
The part melted by the laser scatters around and spreads to the adjacent part
It adheres, degrades the characteristics, and causes a short circuit. Also
It causes damage to the lower Si, and some of the Si melts
The rise causes a short circuit with the Al wiring. Also
Even on the side of the wiring, there is no shadow
And damage the lower Si, and the same Al-
Si is likely to cause a short circuit. This is mainly for lasers
It is difficult to position the irradiation area and part of the laser light is Al wiring
When irradiating parts without heat, or when conducting heat and scattering Al,
This is for damaging the adjacent Si portion. In particular, as shown in FIG.
When the passivation film 18 is coated on
These films 18 are generally made of SiO2, Si3N4 or the like.
Direct and laser transparent
Is not processed by the laser, and the lower Al wiring 15 absorbs the laser.
And receives thermal energy to passivate the upper passivation film
And break out. So this
In this case, the scattered Al particles have no passivation film.
Has much higher energy than when
As shown in FIGS. 3 and 4 (b), the lower part and the periphery are damaged.
And the cracks in the passivation film itself
Or occur. Furthermore, the cut part is a passivation film
There was no way to fill it easily
Therefore, there is a problem that the characteristics are deteriorated. [0007] Further, as a fundamental problem, ICs are fine.
And high integration, and the wiring width is from 2 μm to 1.5 μm, 1
μm and sub-micron
The wiring cutting method by laser processing has its limitations. Sand
In addition, the image projection method shown in FIG.
The beam is narrowed down by the lens 21 and the focus 22
Laser beam diffraction limit even when processing this
Therefore, a spot diameter of 0.5 μm (visible light) can be obtained.
And it is difficult. Furthermore, in the laser processing method, the material is laser
Absorbs light, turns it into heat, then blows it away
Surroundings due to heat conduction and melt-out
It is impossible to avoid the effects of
Is always larger than the spot diameter
Was. That is, the practical minimum processing dimension is about 1 μm.
Therefore, for wiring patterns of 1 μm or less, laser
It was difficult to apply the processing method. In addition, conventional technology
JP-A-56-80131 and JP-A-56-80131
94630, Applied Physics Letter
“A High Intensity Scanning Ion Pump
Lobe with submicrometer spot size
(Appl. Phys. Lett. 34 (5), “A
  high intensity scanning
nprobe with submicrometer
  spot size ") P310-311, 1979
Published March 1, 2008, and Semiconductor Engineering Laboratory, RIKEN
Japan Society for Applied Physics Applied Electronic Properties Subcommittee Japan Society for the Promotion of Science
132th Committee 13th Symposium
Jidium "Ion implantation and submicron processing" 1982
March 3-5, pp. 19-22
Is known. Any prior art
Is simply a sputter etching process using a focused ion beam.
It merely describes the engineering techniques. And
SIM observation equipment was simply sputter etched
It is only an observation of the state. [0008] SUMMARY OF THE INVENTION The object of the present invention is to
Conventional method of cutting the wiring of IC by laser processing and its mounting
Eliminates the disadvantages of mounting
VLSI, ULSI, etc. with a protective film
Cutting the wiring under the protective film for the IC element
After that, an insulating film, a wiring layer, etc. are locally formed at a desired location.
Analyzes and corrects defective parts, greatly shortening the development period
Reduction, improvement of yield during development, etc.
To provide a modified method and a device for an IC element
is there. [0009] The present invention achieves the above object.
In order to achieve this, the method of repairing the IC
Bright Ions Containing Multiple Ion Species Emitted from the Source
Focus the beam and include the multiple focused ion species.
The high-intensity ion beam is monitored for the degree of vacuum inside.
Scans and illuminates the surface of the IC element installed inside the sample chamber
Secondary radiation generated from the surface of the IC element by this irradiation
Detects electrons or secondary ions and detects the detected secondary electrons
Or a SIM image of the IC element surface based on the secondary ions
Displays and opens based on the monitored pressure inside the sample chamber.
A nozzle is inserted into the processing chamber from outside through a valve that is controlled to close.
A gas containing film forming material components through the
Mass separation of specific ion species from
Mass separation in a gas atmosphere containing the supplied film forming material components
Specific ion species based on the displayed SIM image.
Scanning and irradiating a desired portion of the C element enables IC
It was performed by locally forming a film on the element. [0010] Further, the present invention is to achieve the above object.
A vacuum chamber having at least a lens barrel and a sample chamber.
A processing device for an IC element configured to
Emits a high-intensity ion beam containing multiple ion species.
Liquid metal ion source means and liquid metal ion source means
Specific ion species from multiple ion species emitted from
Mass separation means to separate and separated by this mass separation means
Charge for focusing a high-intensity ion beam of a specific ion species
Particle optics means and high intensity of focused specific ion species
Blanking electrode hand for ion beam irradiation / stop
Steps and focused high intensity ion beam of specific ion species
And a deflection electrode means for scanning the sample.
The sample stage means for installing the element and the charged particle optical system means
A focused high-intensity ion beam of a specific ion species
By irradiating the surface of the C element to the surface of the IC element
Secondary charge that detects secondary electrons or secondary ions generated from the
Detection by the charged particle detector means and the secondary charged particle detector means
IC element based on secondary electrons or secondary ions emitted
Scanning ion microscope means for displaying an enlarged SIM image of the surface of an object
And the components of the film formed on the IC element inside the sample chamber
Gas from the outside of the processing chamber to the nozzle via the on-off valve
Gas supply means and the pressure inside the processing chamber
Monitor means for monitoring, and monitor by this monitor means
Control the open / close valve based on the internal pressure of the processing chamber
Gas is introduced from the nozzle by valve control means and gas introduction means.
Control the deflection electrode means in the state of
Scanning high intensity ion beam to desired area of IC element
Irradiation locally forms a film on the IC element,
Controlling the blanking electrode when film formation is completed
And control means for stopping the shooting. [0011] In particular, in the case of the present invention, 0.3 to 0.1 .mu.m or less.
A spot diameter smaller than that can be obtained and the processing professional
Process causes collisions and scattering of ions with target atoms.
Due to the putter processing, the effect on the surroundings due to thermal diffusion is almost
Since there is no trouble, dimensions and processing of 0.3μm or less are possible
And an ion beam with a spot diameter of 0.3 μm or less.
Protective film (pattern) near the point where the
The projection film is projected onto the observation area on the surface of the
The scanning area of the protective film surface projected and irradiated by this scanning
Charged secondary particles or secondary ions generated from the region
Of the observation area by the scanning ion microscope.
The enlarged SIM image is displayed and enlarged observation is performed.
9b based on the expanded SIM image
By controlling the scanning area by the electrodes,
0.3 μm by the charged particle optical system
Ions projected with the following ion beam spot diameter
Beam is scanned and irradiated to locally form an insulating film, etc.
Can be used to protect wiring disconnection points, etc.
It is also possible to connect the cut wiring by forming a wiring film
Wear. [0012] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings. FIG. 6 shows one embodiment of the wiring cutting apparatus according to the present invention.
An example is shown. The apparatus shown in FIG.
A lens barrel 39, a sample chamber 40, and a sample chamber 40 are connected to each other.
The sample exchange chamber 41, the evacuation system, and the mass
Stage 55, liquid metal ion source 65, control
(Bias) electrode 66, ion beam extraction electrode 6
7, aperture 69, electrostatic lenses 70, 71, 72,
Rashiking electrode 73, aperture 74, deflection electrode 75,
76, filament power supply 77, control electrode power supply
Source 78, power supply 79 for extraction electrode, electrode 8 for electrostatic lens
0, 81, high voltage power supply 82, power supply 8 for blanking electrode
3. Power supply for deflection electrode 84, power supply control device 85, sample chamber
Secondary charged particle detector 86 inserted in 40, SIM
(Scanning ion microscope) Observation device 87, ion beam
Means 89 for preventing spot disturbance due to electric charge.
You. The gantry 37 is supported by an air support 38.
Seismic measures are in place. The sample chamber 40 and the sample exchange chamber 41 are
The lens barrel 3 is set on the gantry 37 and is placed above the sample chamber 40.
9 are installed. The sample chamber 40 and the lens barrel 39 are connected by a gate bar.
The sample 40 and the sample exchange chamber 41
Is separated by another gate valve 43. The vacuum evacuation system is an oil rotary pump.
47, oil trap 48, ion pump 49, turbo
The molecular pump 50 and the valves 51, 52, 53, 54
It is configured to have. This vacuum pumping system and the lens barrel 3
9, the sample chamber 40, the sample exchange chamber 41 and the vacuum pipe 44,
45, 46, these lens barrel 39, sample chamber
40, a sample exchange chamber 41 and vacuum pipes 44, 45, 46
The lens barrel 39, the sample chamber 40, and the sample
Exchange room 41 is 10 ~^FiveCan be vacuumed below Torr
ing. On the stage 55 described above, a rotation introduction terminal 61,
X, Y and Z moving micro-means through 62 and 63
Are fixed, and the
The loading table 55 is provided with these moving tools.
With the use of the chromatic meters 56, 57, 58 and the moving ring 59,
X, Y, Z directions of fine movement and rotation angle in horizontal plane
Is to be adjusted. A sample stage 60 is provided on the stage 55 described above.
And the sample is placed on the sample stage 60.
ing. Then, the sample stage 60 is moved by the sample drawer 64.
Between the sample chamber 40 and the sample exchange chamber 41.
When changing the sample, open the gate valve 43 and
The platform 60 is pulled out into the sample chamber 40, and the gate valve 43 is closed.
Open the door of the sample exchange chamber 41, exchange and place the sample,
Close the door and exhaust the sample exchange chamber 41
Open the sample valve 43 and insert the sample stage 60 into the sample chamber 40.
It has become so. Note that in FIG.
Indicated by 0. The liquid metal ion source 65 is
The head is provided facing the sample chamber 40. This liquid
The body metal ion source 65 shown in FIG. 7 is made of an insulator.
Base 650 attached to base 650 in a U-shape
Filament 651, 652, made of tungsten etc.
Between the distal ends of the filaments 651 and 652.
Sharp needle 653 attached by
A metal 654 serving as an ion source attached to the dollar 653;
Is configured. A metal 654 serving as an ion source
For example, Ca, In, Au, Bi, Sn, Cu, etc. are used.
You. The filaments 651 and 652 are connected to the electrode 6
As shown in FIG.
Connected to the filament power supply 77 connected to
I have. The control electrode 66 is a liquid metal electrode.
Installed below the ON source 65 and connected to the high voltage power supply 82
Connected to the concrete power supply 78
A low positive / negative voltage is applied to the installation position of the control electrode 66.
To control the current which is an ion beam. The extraction electrode 67 for the ion beam is
Control electrode 66 and a high-voltage power supply 8
2 is connected to the extraction electrode power supply 79 connected to
You. And a filament of the liquid metal ion source 65
Supply current to 651 and 652, and^FiveVacuum below Torr
After heating and melting in
When a negative voltage of 10 KV is applied, the liquid metal ion source 6
5 from the extremely narrow area at the tip of the needle 653.
The beam is pulled out. Note that the ion beam in FIG.
Reference numeral 68 denotes a spot and reference numeral 68 'denotes a spot. The aperture 69 is connected to the extraction electrode 67.
It is installed at the lower level and is extracted by the extraction electrode 67.
Only take out near the center of the ion beam
I have. The set of the electrostatic lenses 70, 71, 72
Arranged below the aperture 69 and connected to the high voltage power supply 82
It is connected to the connected lens power supplies 80 and 81.
These electrostatic lenses 70, 71, 72
9 to focus the extracted ion beam
ing. The blanking electrode 73 is an electrostatic lens
72, and connected to the control device 85.
It is connected to a blanking electrode power supply 83. This
The ranking electrode 73 is an ion beam
Scan in the direction perpendicular to the direction toward the sample,
Outside the aperture 74 located below the king electrode 73
And stop irradiation of the IC element with the ion beam at high speed.
It is designed to stop. The aperture 74 includes an electrostatic lens 70,
The ion beam spots focused at 71 and 72 are
4 or 0.3 to 0.1 μm on the IC element shown in FIG.
Or to form a projection image with a smaller spot diameter.
ing. The set of the deflection electrodes 75 and 76 has an aperture.
A. It is installed below the device 74 and connected to the control device 85.
Is connected to the deflection electrode power supply 84. This deflection electrode
75 and 76 are focused by the electrostatic lenses 70, 71 and 72
The spot of the ion beam is deflected in X and Y directions.
And 0.3 to 0.3 on the IC element shown in FIG.
It is possible to connect with a spot diameter of 1 μm or less.
ing. The filament of the liquid metal ion source 65
Power supply 77, control electrode power supply 78, ion beam
Power supply 79 for the extraction electrode of the camera and power supplies 80 and 81 for the lens
The high voltage power supply 82 for applying a voltage has a voltage of several tens of KV.
used. The control device 85 is provided for a blanking electrode.
Blanket through the power supply 83 and the power supply 84 for the deflection electrode.
Electrodes 73 and deflection electrodes 75 and 76
Control to operate according to the The secondary charged particle detector 86 is provided in the sample chamber 4
It is installed toward the sample which is an IC element within 0,
In response to a control signal from the control device 85, the blanking electrode
The blanking electrode 73 and the deflection
The deflection electrodes 75 and 76 are controlled via the pole power supply 84,
A pad having a step of the IC element shown in FIG. 4 or FIG.
In the observation region on the surface of the evaporation film (protective film) 18,
0.3 to 0.1 μm or smaller ion diameter spot
When the beam spot is scanned and irradiated,
Secondary electrons or 2 emitted from the surface of the
Accepts the next ion and adjusts its intensity according to the step
And send the signal to the SIM observation device 87
Has become. The SIM observation device 97 includes a CRT 8
8 is provided. Then, the SIM observation device 87 performs observation
In order to observe the area, the ion
And receives signals related to the amount of deflection of the beam in the X and Y directions.
Scans the bright spot of the cathode ray tube 88 in synchronization with
The brightness of the bright spot is sent from the secondary charged particle detector 86.
By changing according to the signal of the incoming current intensity,
Each point on the surface of the passivation film 18 having a step
To obtain a step image corresponding to the secondary electron emission ability in the SI
M, that is, the function of the scanning ion microscope
Magnification observation can be performed. The spot of the spot due to the charge of the ion beam
A means 89 for preventing disturbance is provided between the deflection electrode 76 and the IC element.
Is placed. Diagram of means 89 for preventing this spot disturbance
8 shows the direction that intersects the ion beam passing direction
Electronic showers 890 and 891 are opposed to each other.
The electronic showers 890 and 891 are a cup-shaped main body 892,
Of the filament 893 and the main body 892 provided inside the
And a grid-like extraction electrode 894 provided in the opening.
It is configured. Then, each electronic shower 890, 89
1 is extracted from the filament 893 by the electrode 894.
An electron flow 895 is extracted at an acceleration voltage of about 00 V,
Stream 895 into the space through which the ion beam passes,
The beam is given a negative charge to neutralize it.
8, reference numeral 68 denotes an ion beam, and reference numerals 75 and 76 denote polarized beams.
The counter electrode 90 indicates a sample which is an IC element. Next, referring to FIGS. 6 to 9a and 9b,
In addition to the operation of the device for repairing elements of
One embodiment of the correct method will be described. Samples that are IC elements
90 is placed on the sample stage 60 in the sample exchange chamber 41
Then, the sample exchange chamber 41 is closed, and the sample
After exhausting the sample, the sample chamber is
40 and placed on a stage 55. Next, the lens barrel 39 and the sample are evacuated by the vacuum evacuation system.
10 ~ in the room 40⁶Vacuum to Torr level
Keep in shape. Next, in the apparatus shown in FIG.
And the IC chip or wafer shown in FIG.
A method of cutting the wiring by setting it on the stage 90 will be described.
I will tell. First, a filament power supply is supplied by the high voltage power supply 82.
77, control electrode power supply 78, and extraction electrode
Activate the power supply 79 to open the liquid metal ion source aperture.
A high-brightness ion beam is extracted from the
Activate the sources 80, 81 to activate the electrostatic lenses 70, 71, 72
And 0.3 to 0.1 μm or more depending on the aperture 70
Focus on the following spot system and adjust the ion beam irradiation conditions
Control the beam from the control device 85 with a low energy beam
Power supply for blanking electrode 83 and deflection electrode
Blanking electrode 73 and deflection electrode 7 via power supply 84
5 and 76 to control the IC chip or wafer path
The observation area of the surface of the base film 18 is set to 0.3 to 0.1 μm.
An ion beam spot with a spot diameter of m or less
Scan-irradiates the surface of the passivation film 18 having a step.
Output from the secondary charged particle detector 86 at each point on the surface
By secondary electrons or secondary ions
The enlarged image of the surface of the step of the
Observed by the Raun tube 88 and obtained from the observed enlarged image
9A based on the step information of the passivation film 18 to be formed.
Range to cut the wiring of 1μm or less as shown in (cutting point)
Set. Then, the in-beam irradiation conditions were
Make the energy 10 KeV or more so that it can be processed
The disconnection of the wiring set by the control signal from the control device 85
In the places to be cut, 0.3 to 0.1 μm or less
Scan irradiation of ion beam spot focused on pot diameter
Then, as shown in FIG. 12a or FIG.
A hole is formed in the film 18, and furthermore, FIG.
Sputter the wiring located under the hole as shown in
And remove and cut. In this case, the scanning width and the wiring width
It is necessary to match the deflection voltage control system.
Higher accuracy can be achieved. FIGS. 9A and 9B show the sputtering method in this case.
The case where the wiring is cut more is shown. In FIG.
IC chip or wafer coated with a base film 18
In the upper Al wiring, a rectangular portion indicated by 12 is cut.
It is assumed that the range is to be removed. At this time, the pattern observed as a SIM image
Set based on the step position information of the evaporation film 18
Focused ion beam as shown in FIG.
200a, 200b, 200d, 200c, ..., 200
While scanning by the deflection electrodes 75 and 76 in the order of z,
Drill and illuminate the passivation film 18
The wiring of the radiating portion is removed and cutting is performed. FIG. 10 shows an embodiment of the present invention.
FIG. 7 is a reference diagram of the ion beam optics in the apparatus of FIG.
This shows a configuration in which the system configuration is changed to an aperture projection system.
It is. That is, the ion emitted from the high-intensity ion source 210
Beam is flattened by electrostatic lenses 201, 202 and 203.
Apertures 204, 205, 206, 2
07. This ion beam optical system is shown in FIG.
With the same configuration as the laser optics
Image on the sample 210 by the lenses 208 and 209
It is to project. Here, 211 indicates the projected image.
You. For example, the lenses 208 and 209 are 40 × magnification lenses.
If the size of the
By adjusting the keys 204a, 205a, 206a, and 207a
Aberration if a 40μm rectangle is set with ± 2μm accuracy
When the sample is ignored, a 1 μm rectangular ion
Beam image is set with an accuracy of ± 0.05 μm
Become. Therefore, highly accurate positioning can be easily performed.
No, it is advantageous. In this case, the rectangle 12 in FIG.
The aperture so that the ion beam is irradiated to the part
The wiring 11 is cut by setting and irradiating the ion beam.
U. Using an ion beam optical system as shown in FIG.
As shown in FIG.
When cutting the wiring of an IC without a film
Al wiring 1 by sputtering of ion beam
Only 5 can be removed accurately without damaging the surrounding area,
A cross section as shown in FIG. 11 is obtained. Next, a passivation coat as shown in FIG.
When cutting wiring with
In the processing by the robot, the passivation film on the surface
First, as shown in FIG.
The passivation film 18 is processed to the surface of
The wiring 15 is processed to obtain a cross section as shown in FIG. In this case as well, unlike the case of laser processing,
And damage to the surroundings, cracks in the passivation film, below
No damage to the part and adjacent parts is observed. FIG. 13 shows an apparatus according to another embodiment of the present invention.
FIG. Here, the evacuation system and the secondary electron image
The spray, sample exchange room, gantry, etc. are the same as in FIG.
Has been abbreviated. The liquid metal ion source 65 includes Al-Si, Au-
It is assumed that the ion source is an alloy ion such as Si. Extraction electrode 66
And is controlled by the control electrode 67.
The beam is parallel by the lenses 70, 71 and 72
Beam, and a part of it is taken by aperture 101
EXB mass filter (mass separation device) 102
Control of the EXB mass filter 102 when passing through
Adjust electric field E and magnetic field B applied to this by section 115
Only ions of a certain mass go straight and the lower aperture
Pass through the beam 103 and ions of other masses
Is bent and kicked by aperture 103
Can be prevented from reaching below. Ion that went straight
Are focused by focusing lenses 104, 105, and 106.
Through the blanking electrode 73 and the deflection electrodes 75 and 76.
And reaches the sample surface 90. The sample chamber 102 is provided with an exhaust pump
Exhausted by the pump. The sample chamber 120 contains N_TwoMoth
S, O_TwoGas introduction from gas cylinder 109 such as gas
The chisel 107 is installed, and the cylinder valve is
Controller 117. Also installed in sample chamber 120
Degree of vacuum inside the sample chamber 120 by the measured vacuum gauge 110
Is monitored, and a constant gas concentration is
The valve 108 is controlled so as to be in degrees. In the sample chamber
Is a quadrupole mass spectrometer in addition to the secondary electron detector 86
Has a secondary ion mass spectrometer 111 such as
When ion beam is irradiated to 90
The system for performing the mass analysis of the secondary ion includes one controller 118.
Control of the secondary ion mass spectrometer 111
The signal of the roller 112 enters this. 113 is an ion
In the power supply control unit, the current of the heater 65 of the ion source and the extraction
The voltage of the electrode 66, the voltage of the control electrode 67, etc. are controlled.
Troll. 114 is a power control for the first lens
The controller controls the first lenses 70, 71, 72.
is there. Reference numeral 115 denotes a power control unit, which is an EXB mass filter 10.
The second power supply is controlled. 116 is a power control unit
The power of the second lenses 104, 105, and 106 is controlled.
It is. Reference numeral 118 denotes a controller, which is an ion source power controller.
113, power supply control unit 114 for the first lens, EXB mask
Power supply control unit 115 for filter and power supply control unit for second lens
116 etc. are all controlled. In addition, they are omitted in the figure.
However, the voltages of the blanking electrode 73 and the deflection electrodes 75 and 76 are
The source controller is also controlled by the controller 118.
You. FIG. 14a shows the output of the secondary ion mass spectrometer.
It shows. As shown in FIG. 14b, a thin layer of Al is placed on Si.
Processing with ion beam from the top of the sample with the film
In this case, the secondary ion current becomes as shown in FIG.
Initially, only Al (solid line) is shown. But the border between Al and Si
As the world gets closer, Si (dotted line) starts to appear,
This changes at the border, and when further processing continues, Al
It does not come out and becomes only Si. In this way,
T when it reaches the boundary₁Can be detected. This message
, Only Al is controlled by the controller 118 in FIG.
Time t when processed₁To stop ion beam irradiation
Can be controlled. According to FIG. 13, as shown in FIG.
After cutting the Al wiring except for the passivation film,
The holes in the membrane can be filled. Sand
The ion source 65 is, for example, an Au-Si alloy ion source.
Au ions by the EXB mass separator 102 using
Only take out and process, and as shown in FIG.
After processing Chillon film and Al wiring, EXB mass separator
Change the electric and magnetic fields applied to the
I will put it out. Also, the valve 108 of the gas cylinder 109 is
Open, O_TwoGas is introduced into the sample chamber 120, and is measured by a vacuum gauge.
Controller 1 measures the pressure and keeps it constant
At 17 the opening and closing of the valve 108 is controlled. The electric power applied to the first lens and the second lens
The pressure is changed by the power supply control units 114 and 116 to change the ion beam
Is finely collected on the sample part with energy of several KeV to several tens eV.
It is made to enter while being bundled. (When processing
Energy is 10 KeV or more. ) Such low d
In energy, the ion beam adheres to the sample surface and deposits
Is performed. As described above, FIG.
O in the opening of the film 18_TwoSi ion bee in the atmosphere
Irradiation, which causes the SiO 2 to be irradiated as shown in FIG._Twofilm
111 can be deposited. As a gas to be introduced, O_TwoN instead of_TwoUsing
Then, Si_ThreeN_FourFilms can also be deposited. This
Fill the holes in the passivation film above the cuts of Al wiring
The passivation film can be re-coated.
To prevent deterioration of the element and stabilize the electrical characteristics
Can be FIGS. 16a to 16e show the apparatus shown in FIG.
This is a new embodiment. That is, the Al wiring runs in the upper and lower two layers
And the lower layer is cut with an ion beam at the intersection.
Here is how to turn it off. In FIG. 16A, SiO is placed on Si301._Two
Al wiring 302 runs left and right through the insulating film 309 of FIG.
On top of that, SiO_TwoThe Al wiring 304 is formed via the insulating film 303.
Running perpendicular to the paper. In addition, SiO_TwoNo pa
A filtration film 305 is formed. In this case
The method of cutting only the lower Al wiring 309 is described below.
Shown in In the apparatus shown in FIG.
A with an EXB mass separator 102 using a gold ion source
l Only the ion beam is separated and taken out,
Irradiating the sample of FIG.
Obtain a section like b. Next, the EXB mass separator 10
2 to change only the Si ion beam downward
Take it out again, and from the gas cylinder 109_TwoTo sample chamber 1
02. Also control the voltage of the lens
Focusing of Si ion beam with energy below several KeV
One sample is irradiated. In this way,
By the method described above, SiO_TwoFilm of the upper Al wiring
Vaporized on the processed part to the lower height and cross section as shown in Fig. 16c
Get. After that, the sample chamber is_TwoTurn off the gas and exhaust
Oxygen-free atmosphere and EXB mass separator 102
To extract only Al and reduce the energy to less than several KeV
16d to obtain an Al deposition layer such as 307 in FIG.
The upper Al wiring is reformed. In the same way as before
SiO on top_TwoA film 308 is deposited to form a passivation layer.
You. Below, at the intersection of the Al wiring, the lower Al wiring
Only cutting could be performed. FIG. 13 shows an EXB using an alloy ion source.
One type of metal is extracted by mass separator
In the absence of a suitable alloy ion source
In such a case, it is necessary to prepare some types of ion sources for switching. Figure
17a is an example of such a device, and FIG.
It shows a cross section. In FIG. 17A, the lens barrel 40
Reference numeral 3 denotes an element such as a lens 413 deflector 414
No. The ion source section is a container 4 for a plurality of different element ion sources.
06a, 406b, 406c, ... are cylindrical rotating bodies 41
5, a vacuum vessel 4 connected to the lens barrel
16 These ion source containers
Source portions 407a, 407b, 407c,...
8a, 408b, 408c,..., Control electrode 409
a, 409ba, 409,... Heater current,
The extraction voltage, control voltage, etc.
Branch through the introduction terminal 411 which also served as a terminal
Each cable is connected by cables 410a, 410b, 410c,.
Introduced to on-source. 407a in FIG.
Is used in connection with the optical system.
The rotating body 415 is rotated about the axis 405 so that the ion source 40
7b, 407c,... This
The ion source is precisely aligned with the axis of the optical system
Angle reading mechanism, fine adjustment mechanism, and fixing mechanism
But they are omitted in the figure. When this apparatus is used, as shown in FIG.
Not only metal ion species that make a specific alloy, but also any
Liquid metal ion source (or other type of ion source)
The above wiring repair process can be performed by combining
Becomes In the above embodiment, a liquid metal ion source was used.
As described above, other types of high intensity ion sources, eg
For example, extremely low temperature field ionization source, micro discharge type ion
Sources may be applicable in some cases. [0058] According to the present invention, a wiring width of 1 μm or less can be obtained.
Completion of VLSI, ULSI, etc. with protective film coated on wiring
With conventional laser processing method
Passivation coat on the upper part where difficult processing was difficult
Wiring cutting parts etc. for fine wiring parts that have
Correction processing by local film formation to protect and distribute
Wiring connection between lines can be made, and as a result, defective parts can be analyzed and corrected
Can significantly reduce the development period and development
Effect that can improve the yield at the time
To play.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic cross-sectional view showing a configuration of a conventional laser beam cutting device. 2A is a plan view of an Al wiring portion of an IC showing a method of cutting the Al wiring by the method, and FIG. 2B is a sectional view of the same. FIG. 3 is a plan view showing the influence on the periphery when the Al wiring is cut by a laser. 4A and 4B are cross-sectional views of samples. FIG. 5 is a schematic cross-sectional view showing a configuration of a conventional wiring cutting device using a laser. FIG. 6 is a schematic cross-sectional view showing the configuration of an embodiment of the wiring cutting apparatus using an ion beam according to the present invention. FIG. 7 is a perspective view showing a liquid metal ion source. FIG. 8 is a schematic sectional view of a means for neutralizing a beam by an electron shower. FIGS. 9A and 9B are front views each showing wiring cutting by scanning with an ion beam. FIG. 10 is a schematic cross-sectional view showing a configuration of an ion beam wiring cutting apparatus by a projection method which is not an embodiment of the present invention. FIG. 11 is a cross-sectional view of a sample. 12A and 12B are cross-sectional views of a sample. FIG. 13 is a schematic cross-sectional view showing a configuration of a wiring repair apparatus using an ion beam provided with an alloy ion source and a mass analyzer. 14A is a diagram showing the output of the mass spectrometer, and FIG. 14B is a cross-sectional view of the sample. FIG. 15 is a cross-sectional view of a sample. 16A to 16E are cross-sectional views illustrating a method of cutting a lower wiring. FIG. 17A is a diagram showing a wire cutting device using an ion beam having many ion mirrors, and FIG. 17B is a cross-sectional view thereof. [Explanation of References] 37: Stand, 40: Sample chamber. 41: sample exchange chamber, 55: stage, 65: liquid metal ion source, 85: secondary charged particle detector

Continuation of front page    (72) Inventor Miyauchi Kenko               292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa               Hitachi, Ltd., Production Technology Laboratory (72) Inventor Mikio Hongo               292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa               Hitachi, Ltd., Production Technology Laboratory

Claims (1)

(57) [Claims] A high-intensity ion beam including a plurality of ion species emitted from the liquid metal ion source is focused, and the high-intensity ion beam including the focused plurality of ion species is sampled in a sample chamber in which the degree of vacuum is monitored. Scanning and irradiating the surface of the IC element installed therein, detecting secondary electrons or secondary ions generated from the surface of the IC element by the irradiation,
Based on the detected secondary electrons or secondary ions, the I
A SIM image of the surface of the C element is displayed, and a gas containing a film forming material component is externally supplied to the inside of the processing chamber through a valve whose opening and closing are controlled based on the pressure in the monitored sample chamber. Supply, mass-separating a specific ionic species from the plurality of ionic species, and displaying the mass-separated specific ionic species in an atmosphere of a gas containing the film-forming material component supplied by the nozzle, to the displayed SIM. A method for repairing an IC element, wherein a local film is formed on the IC element by scanning and irradiating a desired portion of the IC element based on an image. 2. The gas containing the film forming material component is a gas
The method according to claim 1, wherein the gas is a gas that forms an insulating film by combining with an element in the beam . 3. What is claimed is: 1. An apparatus for processing an IC element comprising at least a lens barrel and a sample chamber to form a vacuum chamber, wherein said lens barrel emits a high-intensity ion beam containing a plurality of ion species. Liquid metal ion source means, mass separation means for separating a specific ion species from the plurality of ion species radiated from the liquid metal ion source means, and a height of the specific ion species separated by the mass separation means. Charged particle optical system means for focusing a bright ion beam, blanking electrode means for irradiating / stopping the focused high-brightness ion beam of the specific ion species, and high brightness ions of the focused specific ion species Deflecting electrode means for scanning a beam, wherein the sample chamber is provided with a sample stage means for installing an IC element, and a high-intensity ion of the specific ion species focused by the charged particle optical system means. Secondary charged particle detector means for detecting secondary electrons or secondary ions generated from the surface of the IC element by irradiating a beam onto the surface of the IC element; and detecting the secondary electrons or secondary ions by the secondary charged particle detector means. Scanning ion microscope means for displaying an enlarged SIM image of the surface of the IC element based on the secondary electrons or secondary ions, and a gas containing a component of a film formed on the IC element inside the sample chamber. Gas supply means for supplying a pressure from the outside of the processing chamber through a nozzle via an on-off valve, monitoring means for monitoring the pressure inside the processing chamber, and the inside of the processing chamber monitored by the monitoring means. Valve control means for controlling the on-off valve based on pressure, and controlling the deflection electrode means in a state where gas is introduced from the nozzle by the gas introduction means to control the height of the specific ion species. A local film is formed on the IC element by scanning and irradiating a desired region of the IC element with the ion beam, and when the local film formation is completed, the irradiation by controlling the blanking electrode is stopped. IC having control means for causing
Device processing device. 4. Gas containing components of a film formed on the IC element
Are combined with the elements in the high-intensity ion beam to form an insulating film.
4. The apparatus for processing an IC element according to claim 3, wherein the gas is a gas that forms a gas .