JPH10223168A - Sample analyzer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To observe and analyze the interior of a wafer by providing a processing light source for discharging charged particles from a sample and a sample observing light source, and providing an analyzing mechanism and an observing mechanism containing an optical system respectively. SOLUTION: A processing light source 7 is coaxial with the observing light transmitting a second mirror 9, and the light is radiated to the surface of a sample 3 via a third mirror 1 and an optical lens 2. Since the processing light source 7 has high energy, the material on the surface of the sample 3 is ionized and desorbed. The desorbed ions 102 are extracted by the potential of a center pipe 20 arranged at the center of the optical lens 2, pass through a through-hole 22 of the third mirror 1, are reflected on an ion reflector 14, and are detected by an ion detector 15. A control device 110 determines the flight time of the ions 102, based on the difference of the detection time for mass spectrometry. The sample 3 is observed with an observing laser 104 and a CCD camera 5, a sample bed 4 is operated, and the optical axis of the processing light source 7 is moved to prepare for mass spectrometry.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sample analysis and processing technique, and more particularly to a processing and observation apparatus for a minute area, which is suitable for manufacturing semiconductors, liquid crystal displays and the like.

[0002]

2. Description of the Related Art As a method for detecting fine foreign matter adhering to the surface of a semiconductor wafer, there is known a method of irradiating a laser light to the wafer surface and detecting light scattering by the foreign matter. By scanning the entire surface of the wafer using this method, it is possible to obtain information on the appearance such as the presence / absence of foreign matter and its position and size.

[0003] However, the above-mentioned method cannot obtain information such as components constituting the foreign matter, and cannot identify the foreign matter. To identify the source of a foreign object,
It is essential to identify what foreign matter is attached.

Japanese Patent Application Laid-Open No. Hei 6-194319 discloses a method for analyzing foreign matter on a semiconductor film by irradiating a sample with a laser beam for observation and a laser beam for vaporization coaxially and identifying an analysis position from a sample image. Thus, a technique has been proposed in which a vaporized foreign substance is analyzed by a time-of-flight (TOF) mass spectrometer. Further, in the sample analyzer described in Japanese Patent Application Laid-Open No. 8-193977, high-efficiency analysis has been made possible by devising the objective lens portion of this sample analyzer and extracting secondary ions.

[0005]

However, according to the above-mentioned conventional apparatus, the surface of the sample can be observed and analyzed, but cannot be analyzed to the inside where light does not transmit. In the manufacture of semiconductor wafers and the like, it is essential to inspect wiring and defects inside the wafer. Accordingly, a first object of the present invention is to provide a sample analyzer capable of analyzing the inside of a sample.

Further, according to the above-described conventional apparatus, mass spectrometry is performed by evaporating (desorbing) the surface of the sample, so that a defective portion remains on the surface of the sample after the analysis. Therefore, a second object of the present invention is to provide a sample analyzer capable of repairing a defective portion on a sample surface.

[0007]

In order to achieve the first object, the present invention provides a light source for processing light for emitting charged particles from a sample and a light source for observation for observing the sample. A light source, an optical system for guiding the processing light and the observation light to the surface of the sample, an analysis mechanism for analyzing charged particles emitted from the sample by irradiation of the processing light, and an observation mechanism; Comprises a display device for displaying an image, and reflected light display means for displaying, on the display device, an image obtained by the reflected light of the observation light from the sample, and the optical system has a first position at the position of the optical axis. And a mirror having a second charged particle transmitting portion at the position of the optical axis, and a path of the charged particles emitted from the sample to the analysis mechanism is the first charged particle. A sample passing through the particle transmitting section and the second charged particle transmitting section A analysis device, a charged particle source for irradiating a charged beam to a sample, further comprising a sample analyzing device and an objective lens for deflecting the charged particle beam is provided. The observation mechanism of the sample analyzer further includes a charged particle detector that detects secondary charged particles emitted from the sample by irradiation of the charged beam and outputs the secondary charged particles to a display device.

Here, at least one of the irradiation axis of the charged beam from the charged particle source to the sample surface and the path of the secondary charged particles from the sample surface to the charged particle detector is the first charged particle. You may make it pass through a particle transmission part and a 2nd charged particle transmission part.

If the irradiation axis of the charged beam and the optical axis of the optical system intersect at the first charged particle transmitting portion of the mirror, the sample analyzer of the present invention allows the charged particle source to move from the charged particle source to the sample surface. Can be configured so that the irradiation axis of the charged beam passes through the first and second charged particle transmitting portions.

Further, the irradiation axis of the charged beam and the optical axis of the optical system may intersect on the sample, and the path of the secondary charged particles may pass through the first and second charged particle transmitting portions. Good. In this case, the optical axis of the optical system and the path of the secondary charged particles are separated at the first charged particle transmitting portion of the mirror.

In the sample analyzer of the present invention, it is desirable to use laser light as observation light and processing light.
As the processing light, a laser beam for sample desorption and / or
Alternatively, a deposition laser beam can be used. The reflected light display means includes an image pickup device (for example, C
A CD (Charge Coupled Device: Charge Coupled Device) camera or the like can be used.

According to the present invention, the sample surface is processed by providing a mechanism for irradiating the sample with a charged beam (for example, an ion beam or an electron beam) to the sample analyzer for observing and analyzing the sample surface with light. I was able to do it. According to the sample analyzer of the present invention, the sample surface can be easily etched by using the charged beam, so that observation and analysis of the inside of the sample that does not transmit laser can be easily performed.

For observation of the sample surface, a scanning electron microscope which detects the state of the sample surface with an electron beam and outputs it to a display device is suitable. Therefore, it is desirable to further provide a scanning electron microscope even when an ion beam device is used as the charged beam mechanism. In addition,
The display device for displaying the output of the scanning electron microscope may be provided separately from the device for displaying the output of the other detection means (the reflected light of observation light and / or the output of the charged particle detector). And may be common.

In the case where one or more charged beam devices (such as an ion beam device and / or a scanning electron microscope) are provided in addition to the charged beam device, at least one of them sets the inspection position to the charged beam device and the optical beam device. It may be different from the system. That is, the irradiation axis of the additional charged beam device and the optical axis of the optical system may be arranged so as not to intersect on the sample surface.

It is desirable that the sample analyzer of the present invention further includes a gas supply mechanism for supplying gas to the sample surface. This is because energy beam assisted etching by light (laser beam) or charged beam can be performed by appropriately supplying a gas to the sample surface. When the energy beam assisted etching gas is supplied by the gas supply mechanism, the energy beam assisted etching gas may be a halogen gas such as Cl ₂ , Br ₂ , I ₂ , a halogen compound such as XeF ₂ , or a gas such as water or alcohol. Can be used.

Further, according to the present invention, by supplying the deposition gas, the energy beam assisted deposition allows
Damage (defects in the sample as well as parts vaporized by the processing light and parts etched by the charged beam) can also be repaired. Therefore, by providing the gas supply mechanism, the second object can be achieved. When the energy beam deposition gas is supplied by the gas supply mechanism, as a source of the energy beam deposition gas, for example, W (CO) ₆ , Mo (CO) ₆ , other metal compounds, organic compounds, Si compounds, oxygen, etc. Can be used. When the sample analysis by the charged beam is unnecessary, the observation mechanism does not need to include the charged particle detector.

According to the conventional apparatus described above, since the optical microscope is used for analysis positioning, the observation resolution limit is about 0.2 to 0.3 μm. Furthermore, since the light beam cannot be deflected electromagnetically, even if the analysis position is determined,
The accuracy of matching the position with the analysis beam is 0.1 to 1 μm
m or more. However, the device of the present invention has high resolution and positioning accuracy when observing a sample. This is because the charged beam allows observation of the sample with high resolution.

[0018] The sample analyzer of the present invention comprises: an input receiving means for receiving designation of an arbitrary position on the sample surface in an image showing a state of the sample surface displayed on a display device;
It is preferable that the apparatus further includes a control device having an irradiation position determining means for irradiating the designated position of the sample with the charged beam or the processing light. This is because the processing position can be easily specified. Note that this control device operates the other mechanisms (for example, the operation of a mirror, an optical lens, an objective lens, each light source, a charged particle source, and the like).
And a common means.

It is desirable that the control device has means for displaying a foreign matter map showing the foreign matter detection position together with an image showing the state of the sample surface obtained by the observation mechanism. The image indicating the state of the sample surface and the foreign matter map may be displayed on the same screen, or may be displayed on separate screens.

In the present invention, it is desirable to provide a mass spectrometer in the analysis mechanism because a mass spectrum can be used for identifying a component to be observed on the sample surface. In this case, it is preferable that the control device further includes a unit that displays a mass spectrum obtained by the mass spectrometer together with an image (and / or a foreign substance map) indicating the state of the sample surface obtained by the observation mechanism. As in the case described above, the mass spectrum may be displayed on the same screen as the image (and / or the foreign substance map) indicating the state of the sample surface, or may be displayed on separate screens.

The sample stage includes a coarse movement mechanism having an operation range at least twice as large as the sample size, and a fine movement mechanism having an operation range equal to or less than 1/100 of the sample size. By controlling the operations of the coarse movement mechanism and the fine movement mechanism, alignment is performed such that the intersection between the irradiation axis of the charged beam or the optical axis of the processing light and the sample surface becomes the designated position received by the input receiving means. It is desirable to have means. As described above, by adjusting the analysis position and the position of the light or the charged beam by the two-stage sample stage, according to the present invention, fine alignment of 0.1 μm or less can be performed.

[0022]

Embodiments of the present invention will be described below with reference to the drawings. Embodiment 1 FIG. 1 schematically shows a sample analyzer of this embodiment. The sample analyzer of the present embodiment includes a sample chamber (not shown) in which a sample stage 4 for holding a sample 3 is provided, and a processing light (a YAG (yttrium aluminum garnet) laser in the present embodiment). , A light source 6 for observation light (a He-Ne laser in this embodiment), and an optical system (first mirror 8, second mirror 9, third mirror 1, and optical lens 2) And an ion detector 15;
An ion reflector 14 for deflecting charged particles emitted from the sample, an observation mechanism 140, a charged particle source (Ga liquid metal ion source in this embodiment) 16, and an ion beam irradiation system (a focusing lens 17, a charged beam Regulation mask 18,
Ion beam deflection electrode 19 and objective lens 13)
And a gas supply mechanism 10 for introducing gas into the sample chamber, and a second charged particle detector (a secondary electron detector in this embodiment) 1
1 is provided.

The observation mechanism 140 detects the control device 110, the image display device 120, the CCD camera 5 for imaging the reflected light 105 from the sample 3, and the secondary charged particles emitted from the sample 3, and detects the detection result. And a second charged particle detector 11 that outputs the control signal to the display device via the control device 110.

The first mirror 8 is a half mirror that reflects the observation light 104 and transmits the reflected light 105 from the sample. The second mirror 9 is a half mirror that reflects the observation light 104 and the reflected light 105 and transmits the processing light 103. The third mirror 1 reflects the lights 103 to 105, but at the center (a part corresponding to the optical axis of the light sources 6 and 7).
Has a through hole 22 as a charged particle transmitting portion. Also,
The optical lens 2 also has a through-hole (center pipe) 20 as a charged particle transmitting portion at the position of the optical axis.

The observation light 10 emitted from the observation light source 6
3 forms an image on the surface of the sample 3 via the first mirror 8, the second mirror 9, the third mirror 1, and the optical lens 2. The reflected light 105 from the imaging point returns to the original optical path,
Photographed by the CCD camera 5. An image of the surface of the sample 3 obtained by the CCD camera 5 is displayed on the display device 120 via the control device 110. The image resolution in this case is
It is about 0.3 μm. Since the laser beam passes through the SiO ₂ protective film, there is an advantage that the structure below the protective film can be grasped.

On the other hand, the processing laser 7 is also
Through the third mirror 1 and the optical lens 2 to irradiate the surface of the sample 3 through the third mirror 1 and the optical lens 2. Since the processing laser 7 has high energy, the substance on the surface of the sample 3 is ionized and desorbed. Desorbed ions 102
Is pulled out at the potential of the center pipe 20 arranged at the center of the optical lens 2, and the through hole 22 of the third mirror 1
And is reflected by the ion reflector 14 and detected by the ion detector 15.

The time to reach the ion detector 15 differs depending on the difference in mass between ions. Therefore, the controller 110 obtains the ion flight time (TOF) from the difference between the detection times,
Perform mass spectrometry (time of flight (TOF) mass spectrometer). According to the sample analyzer of the present invention, the sample is observed by the observation light 104 and the CCD camera 5, and the sample is moved by operating the stage 4 so that the position to be analyzed is the optical axis position of the processing light. By irradiating processing light and detecting desorbed ions, a desired portion of the sample can be subjected to mass spectrometry.

The above observation light 104 and processing light 10
According to 3, it is possible to observe and analyze the sample surface (including the lower layer when the outermost surface layer transmits light).
Next, a method of analyzing the inside of the sample using a charged beam mechanism (in this embodiment, a focused ion beam (FIB) device) will be described.

Ions 101 generated by charged particle source 16
Is accelerated to about 30 kV, is focused by the focusing lens 17, passes through the opening 18 a of the charged beam regulating mask 18, and is focused on the sample by the ion beam deflection electrode 19 and the objective lens 13. The charged beam deflection electrode 1
By deflecting the ion beam by 9, an arbitrary range of the sample can be processed and observed.

During processing, selective etching can be performed by irradiating an ion beam while spraying an energy beam assisted etching gas from the gas supply mechanism 10 to a processed portion on the sample surface. For example, in the presence of water,
The etching rate of the compound containing carbon increases, but the etching rate of the metal decreases. Thereby, for example, only the protective film can be selectively removed. An etching gas can be appropriately selected depending on a processing target, and for example, a halogen-based gas or the like can be used.

In this embodiment, the surface exposed by the etching inside the sample can be observed and analyzed by the above-mentioned laser beam by etching and removing the sample surface by the FIB. In addition, the probe current is set to 30 pA or less, an observation ion beam is irradiated, secondary electrons emitted from the sample are detected by the secondary electron detector 11, and the resulting SIM (scanning ion microscope) image is obtained. By displaying the image on the display device 120 via the control device 113, the sample can be observed also by an ion beam.

The sample stage 4 of this embodiment has a function of not only moving the sample in parallel but also tilting the sample. Therefore, in the present embodiment, when analyzing the sample surface, the sample is kept horizontal, and when analyzing the etched cross section, the sample is inclined and the sample surface and cross section are easily observed and analyzed. be able to.

In this embodiment, a hole dug at the time of analysis can be filled by deposition. That is, by introducing a deposition gas into the sample chamber from the gas supply mechanism 10 and simultaneously irradiating an energy beam (laser or ion beam), so-called energy beam assisted deposition can be performed to fill the defective portion. . For example, when repairing a defect in a conductive portion, the defect can be filled with W by using W (CO) ₆ as a deposition gas. When repairing a defect in an insulating portion, the defect can be filled with SiO ₂ by irradiating an energy beam while simultaneously supplying a Si compound and oxygen.

As shown in FIG. 1, the control unit 110 includes a main storage unit 111 and a central processing unit (CPU) 112.
And an external storage device 113, and according to an instruction input through the input device 130,
The operation of each unit is controlled. Further, the outputs of the CCD camera 5, the secondary electron detector 11, and the ion detector 15 are edited and displayed on the display device 120.

These functions of the control device 110 are stored in the external storage device 113 in advance, and the main storage device 111
The present invention is not limited to this, but is realized by the CPU 112 executing the instructions included in the program read in the. For example, these functions of the control device 110 may be realized by a general-purpose processor that executes the above-described program stored in advance or a specific hardware device including hard-wired logic.

According to this embodiment, mass spectrometry can be performed not only on the sample surface but also on foreign substances inside the sample. In addition, since not only an optical system but also an electron beam can be used for analysis positioning, positioning can be performed with an accuracy of 0.1 μm or less. Further, according to the present embodiment, it is possible to correct the damage of the sample at the time of analysis.

<Embodiment 2> The sample analyzer of this embodiment is
FIG. 2 schematically shows this. The device of the present embodiment also has a control device 110, a display device 120, and
An input device 130 is provided, but these are not shown.

In the first embodiment, the FIB device is connected to the optical axis of the optical system and the irradiation axis 1 of the ion beam through the third mirror 1.
However, in the present embodiment, the optical axis of the optical system and the irradiation axis 101 of the ion beam are arranged so as to intersect at the analysis target position on the sample surface. By arranging in this way, the working distance can be shortened, so that the individual performance of the laser-based optical processing mechanism and the FIB device can be maximized as much as possible.

In this embodiment, since the optical axis of the optical system does not coincide with the irradiation axis 101 of the ion beam, when performing observation with the observation light or analysis with the analysis light,
When operating the sample stage 4 so that the sample surface and the optical axis of the optical system are orthogonal to each other and performing processing / observation with the FIB device,
The sample stage 4 is operated so that the sample surface and the irradiation axis 101 of the ion beam are orthogonal to each other.

<Embodiment 3> The sample analyzer of this embodiment is
FIG. 3 schematically shows this. The device of the present embodiment also has a control device 110, a display device 120, and
An input device 130 is provided, but these are not shown.

In the first and second embodiments, each part is arranged so that the irradiation position of the ion beam 101 on the surface of the sample 3 and the irradiation position of the observation light 104 and the processing light 103 coincide with each other. In the present embodiment, these irradiation positions do not match. With such an arrangement, the working distance can be shortened, so that the performance as a laser TOF mass spectrometer and the performance as a FIB device can be maximized.

In the present embodiment, when performing observation with the observation light or analysis with the analysis light, the sample 3 is held at the optical axis position 3a.
When processing and observing by the FIB apparatus, the sample 3 is slid and placed at the ion beam irradiation axis position 3b. As described above, in the apparatus of the present embodiment, it is necessary to slide the sample between the laser irradiation and the ion beam irradiation. However, it is difficult to slightly deflect the light beam itself like a charged beam.

Therefore, it is necessary to adjust the position of the sample by moving the stage. In a normal stage, the moving distance and the accuracy are not compatible. Therefore, in this embodiment, the moving accuracy of the stage has a double structure. That is, as shown in FIG.
The sample stage 4 of the present embodiment includes a first sample stage 201 connected to a coarse movement mechanism and a second sample stage 20 connected to a fine movement mechanism.
2 and the two sample tables 201 and 202
Are connected by piezoelectric elements 204 and 205. The coarse XY stage 201 has an operating range at least twice as large as the sample size, and the fine XY stage 202 has an operating range less than 1/100 of the sample size. By providing the two-stage moving mechanism in this manner, fine positioning of 0.1 μm or less can be performed.

<Embodiment 4> The sample analyzer of this embodiment is
FIG. 4 schematically shows this. The device of the present embodiment also has a control device 110, a display device 120, and
An input device 130 is provided, but these are not shown.

The sample analyzer of this embodiment is different from the sample analyzer of embodiment 1 in that a scanning electron microscope (SEM)
21 are provided. In this embodiment, since the sample surface can be observed with high resolution by the SEM 21, for example, when the present apparatus is used for inspection of a foreign substance on a semiconductor wafer, foreign substances of 0.5 μm or less can be detected and analyzed.

In this embodiment, the beam axis 1 of the SEM is used.
07 is parallel to the optical axis of the optical system, and TOF
The SEM was positioned off-axis of the mass spectrometer. This is for shortening the working distance and maximizing the performance of each, so that the beam axis 107 of the SEM coincides with or intersects with the optical axis of the optical system and / or the ion beam axis of the FIB apparatus. You may.

As in the third embodiment, between processing and observation by the optical system and the FIB apparatus and observation by the SEM 21,
You need to slide the sample. Therefore, the sample stage 4
Has a double structure similar to that of the third embodiment.

The control device 110 according to the present embodiment includes the display device 1
Means for displaying a foreign matter map indicating the position of the detected foreign matter at 20; a sample (optical image, SIM image, or SEM image) of the surface of the sample 3 displayed on the display device 120 or the foreign matter map; By operating the input receiving means for receiving the designation of an arbitrary position of the sample table and the coarse movement mechanism and the fine movement mechanism of the sample table 4, the designated position of the sample is changed to the optical axis of the optical system (in this embodiment, the ion beam axis 101). Matches)
And an irradiation position determining means arranged at the position of (1). As a result, in the present embodiment, the setting of the analysis target portion can be easily performed.

An example of a positioning operation in this embodiment will be described with reference to FIG. First, the control device 110
As shown in (a), the SEM image 53 of the sample surface and the cross cursor 51 are displayed on the display screen 50 of the display device 120, and the movement instruction of the cross cursor is input via the mouse, the touch sensor, or the like of the input device 130. Accept the input of. Here, as shown in FIG. 6B, when the intersection of the cross cursor 51 is aligned with the display position of the foreign substance 52, the control device 11
The zero irradiation position determining means operates the coarse movement mechanism and the fine movement mechanism of the sample table 4 to arrange the designated portion (foreign matter 52) at the optical axis position of the optical system, and input the same via the input device 130. Irradiate a laser or ion beam according to the instruction given. Thereby, processing, observation, and analysis targets can be easily set.

FIG. 7 shows an example of an analysis result output in this embodiment. The control device 110 according to the present embodiment displays a foreign matter map display window 71 obtained by scanning the entire surface of the sample on a display screen 70 of the display device 120 in accordance with an instruction input via the input device 130, and a processing position. Has a function of providing an SEM image display window 74 and a mass spectrum display window 73 of the designated analysis point 75.

The foreign substance information such as the foreign substance map may be constructed by the control device 110 by itself. However, the information of the dedicated measuring device is received in advance via communication or the like and stored in the external storage device 113. In advance, this may be read out and displayed according to the input instruction. Further, an optical microscope image may be further displayed on the same screen.

[0052]

According to the present invention, the inside of a sample can be observed and analyzed. Further, according to the present invention, it is possible to repair a defective portion on the sample surface.

[Brief description of the drawings]

FIG. 1 is a schematic diagram illustrating a configuration of a sample analyzer according to a first embodiment.

FIG. 2 is a schematic diagram illustrating a configuration of a sample analyzer according to a second embodiment.

FIG. 3 is a schematic diagram illustrating a configuration of a sample analyzer according to a third embodiment.

FIG. 4 is a schematic diagram illustrating a configuration of a sample analyzer according to a fourth embodiment.

FIG. 5 is a schematic diagram illustrating a sample stage in a third embodiment.

FIG. 6 is an explanatory diagram of a processing position setting operation according to a fourth embodiment.

FIG. 7 is an explanatory diagram illustrating an example of a display screen according to a fourth embodiment.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... 3rd mirror 1, 2 ... Optical lens, 3 ... Sample, 4 ...
Sample stage, 5 ... CCD camera, 6 ... Observation light source, 7 ... Processing light source, 8 ... First mirror, 9 ... Second mirror, 10 ...
Gas supply mechanism, 11 secondary electron detector (second charged particle detector), 13 objective lens, 14 ion reflector, 15 ion detector (first charged particle detector), 1
6: charged particle source, 17: focusing lens, 18: charged beam regulating mask, 18a: opening, 19: charged beam deflection electrode, 20: charged particle transmitting part (center pipe) of optical lens, 21: scanning electron microscope, 22: charged particle transmitting portion (through hole) of mirror, 101: ion beam, 102:
Path of desorbed ions, 103: processing laser, 104: observation laser, 105: reflected light, 106: path of secondary electrons, 107: electron beam.

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁶ Identification code FI H01J 37/20 H01J 37/20 D H01L 21/203 H01L 21/203 M 21/302 21/66 L 21/66 21/302 Z // H01L 21/3205 21/88 Z

Claims (13)

[Claims] A light source for processing light for emitting charged particles from the sample; a light source for observation light for observing the sample; and a light source for guiding the processing light and the observation light to the surface of the sample. An optical system, an analysis mechanism for analyzing charged particles emitted from the sample by irradiation of the processing light, and an observation mechanism, the observation mechanism is a display device for displaying an image, and the observation light Means for displaying an image obtained by reflected light from the sample on the display device, wherein the optical system includes a mirror having a first charged particle transmitting portion at the position of the optical axis, and a mirror having a first charged particle transmitting portion at the position of the optical axis. An optical lens having two charged particle transmitting portions, wherein a path of the charged particles emitted from the sample to the analysis mechanism passes through the first charged particle transmitting portion and the second charged particle transmitting portion. In the sample analyzer, a charged beam is applied to the sample. A charged particle source for irradiation; and an objective lens for deflecting the charged beam, wherein the observation mechanism detects secondary charged particles emitted from the sample by irradiation of the charged beam, A sample analyzer further comprising a charged particle detector for outputting to a display device. 2. The sample analyzer according to claim 1, further comprising a gas supply mechanism for supplying a gas to the sample surface. 3. The method according to claim 1, wherein an axis of irradiation of the charged beam from the charged particle source to the sample surface and a path of the secondary charged particles from the sample surface to the charged particle detector. , At least one of which passes through the first charged particle transmitting section and the second charged particle transmitting section. 4. A light source for processing light for emitting charged particles from a sample, a light source for observation light for observing the sample, and a light source for guiding the processing light and observation light to the surface of the sample. An optical system, an analysis mechanism for analyzing charged particles emitted from the sample by irradiation of the processing light, and an observation mechanism, the observation mechanism is a display device for displaying an image, and the observation light Means for displaying an image obtained by reflected light from the sample on the display device, wherein the optical system includes a mirror having a first charged particle transmitting portion at the position of the optical axis, and a mirror having a first charged particle transmitting portion at the position of the optical axis. An optical lens having two charged particle transmitting portions, wherein a path of the charged particles emitted from the sample to the analysis mechanism passes through the first charged particle transmitting portion and the second charged particle transmitting portion. In the sample analyzer, a charged beam is applied to the sample. A sample analyzer, comprising: a charged particle source for irradiation; an objective lens for deflecting the charged beam; and a gas supply mechanism for supplying gas to the sample surface. 5. An apparatus according to claim 4, wherein an axis of irradiation of said charged beam from said charged particle source to said sample surface passes through said first charged particle transmitting section and said second charged particle transmitting section. Sample analyzer. 6. The sample analyzer according to claim 1, wherein the charged beam is an ion beam. 7. The sample analyzer according to claim 1, wherein the charged beam is an electron beam. 8. The sample analyzer according to claim 6, wherein the observation mechanism further includes a scanning electron microscope that detects a state of the surface of the sample by an electron beam and outputs the state to a display device. 9. The sample analyzer according to claim 1, wherein the analysis mechanism includes a mass spectrometer that performs mass analysis of charged particles emitted from the sample. 10. The apparatus according to claim 1, wherein: in the image displayed on the display device, an input receiving means for receiving designation of an arbitrary position on the sample surface; A sample analyzer, further comprising: a control device having an irradiation position determining means for irradiating the charged beam or the processing light. 11. The sample stage according to claim 10, wherein the sample stage comprises: a coarse movement mechanism having an operation range of at least twice the sample size; and a fine movement mechanism having an operation range of 1/100 or less of the sample size. The irradiation position determining means controls the operation of the coarse movement mechanism and the fine movement mechanism, so that the intersection of the irradiation axis of the charged beam or the optical axis of the processing light and the sample surface becomes A sample analyzer, comprising: means for performing positioning so as to be at the designated position. 12. The sample analyzer according to claim 10, wherein the control device has means for displaying a foreign matter map indicating a foreign matter detection position together with the image obtained by the observation mechanism. 13. The observation mechanism according to claim 10, further comprising: a mass spectrometer for mass-analyzing the charged particles emitted from the sample, wherein the control device comprises: an image obtained by the observation mechanism. A means for displaying a mass spectrum obtained by the mass spectrometer,
A sample analyzer further provided.