JPS5666039A - Etching method - Google Patents

Etching method

Info

Publication number
JPS5666039A
JPS5666039A JP14255979A JP14255979A JPS5666039A JP S5666039 A JPS5666039 A JP S5666039A JP 14255979 A JP14255979 A JP 14255979A JP 14255979 A JP14255979 A JP 14255979A JP S5666039 A JPS5666039 A JP S5666039A
Authority
JP
Japan
Prior art keywords
etching
mask
layer
micro
drop
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14255979A
Other languages
Japanese (ja)
Inventor
Makoto Hirayama
Tadashi Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14255979A priority Critical patent/JPS5666039A/en
Publication of JPS5666039A publication Critical patent/JPS5666039A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain a micro-pattern with higher reproducibility by a method wherein the optimum etching condition is determined on detecting the deflection of a photoresist film accompanied by the progress of etching, using the reflected waves of laser beams. CONSTITUTION:A poly-Si layer 7 is formed on an Si substrate 1, and photoresist masks 81-83 which are respectively L1>L2>L3 wide are laid on the layer. When the etched side of the mask 83 becomes t1X2>LB as etching progresses, a drop in a vertical direction is produced because the mask 83 is deflected as the layer 7 supporting the mask is being removed. The drop can be detected if these monitor patterns are observed continuously after the commencement of etching, making it possible to find out the optimum point of time for etching. This constitution enables the micro-pattern to be formed with superior reproducibility.
JP14255979A 1979-11-01 1979-11-01 Etching method Pending JPS5666039A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14255979A JPS5666039A (en) 1979-11-01 1979-11-01 Etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14255979A JPS5666039A (en) 1979-11-01 1979-11-01 Etching method

Publications (1)

Publication Number Publication Date
JPS5666039A true JPS5666039A (en) 1981-06-04

Family

ID=15318148

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14255979A Pending JPS5666039A (en) 1979-11-01 1979-11-01 Etching method

Country Status (1)

Country Link
JP (1) JPS5666039A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4995368A (en) * 1988-02-04 1991-02-26 Nippondenso Co., Ltd. Fuel injection timing apparatus
US20110053335A1 (en) * 2009-09-03 2011-03-03 Elpida Memory, Inc. Phase-change memory device and method of manufacturing phase-change memory device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4995368A (en) * 1988-02-04 1991-02-26 Nippondenso Co., Ltd. Fuel injection timing apparatus
US20110053335A1 (en) * 2009-09-03 2011-03-03 Elpida Memory, Inc. Phase-change memory device and method of manufacturing phase-change memory device

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