JPS5666039A - Etching method - Google Patents
Etching methodInfo
- Publication number
- JPS5666039A JPS5666039A JP14255979A JP14255979A JPS5666039A JP S5666039 A JPS5666039 A JP S5666039A JP 14255979 A JP14255979 A JP 14255979A JP 14255979 A JP14255979 A JP 14255979A JP S5666039 A JPS5666039 A JP S5666039A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- mask
- layer
- micro
- drop
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain a micro-pattern with higher reproducibility by a method wherein the optimum etching condition is determined on detecting the deflection of a photoresist film accompanied by the progress of etching, using the reflected waves of laser beams. CONSTITUTION:A poly-Si layer 7 is formed on an Si substrate 1, and photoresist masks 81-83 which are respectively L1>L2>L3 wide are laid on the layer. When the etched side of the mask 83 becomes t1X2>LB as etching progresses, a drop in a vertical direction is produced because the mask 83 is deflected as the layer 7 supporting the mask is being removed. The drop can be detected if these monitor patterns are observed continuously after the commencement of etching, making it possible to find out the optimum point of time for etching. This constitution enables the micro-pattern to be formed with superior reproducibility.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14255979A JPS5666039A (en) | 1979-11-01 | 1979-11-01 | Etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14255979A JPS5666039A (en) | 1979-11-01 | 1979-11-01 | Etching method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5666039A true JPS5666039A (en) | 1981-06-04 |
Family
ID=15318148
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14255979A Pending JPS5666039A (en) | 1979-11-01 | 1979-11-01 | Etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5666039A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4995368A (en) * | 1988-02-04 | 1991-02-26 | Nippondenso Co., Ltd. | Fuel injection timing apparatus |
US20110053335A1 (en) * | 2009-09-03 | 2011-03-03 | Elpida Memory, Inc. | Phase-change memory device and method of manufacturing phase-change memory device |
-
1979
- 1979-11-01 JP JP14255979A patent/JPS5666039A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4995368A (en) * | 1988-02-04 | 1991-02-26 | Nippondenso Co., Ltd. | Fuel injection timing apparatus |
US20110053335A1 (en) * | 2009-09-03 | 2011-03-03 | Elpida Memory, Inc. | Phase-change memory device and method of manufacturing phase-change memory device |
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