JPS5539691A - Fabrication of fine pattern - Google Patents

Fabrication of fine pattern

Info

Publication number
JPS5539691A
JPS5539691A JP11395278A JP11395278A JPS5539691A JP S5539691 A JPS5539691 A JP S5539691A JP 11395278 A JP11395278 A JP 11395278A JP 11395278 A JP11395278 A JP 11395278A JP S5539691 A JPS5539691 A JP S5539691A
Authority
JP
Japan
Prior art keywords
layer
mask
pattern
shape
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11395278A
Other languages
Japanese (ja)
Inventor
Katsumi Suzuki
Masao Tajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP11395278A priority Critical patent/JPS5539691A/en
Publication of JPS5539691A publication Critical patent/JPS5539691A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/40Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal all coatings being metal coatings
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00Methods for coating glass
    • C03C2218/30Aspects of methods for coating glass not covered above
    • C03C2218/32After-treatment
    • C03C2218/328Partly or completely removing a coating
    • C03C2218/33Partly or completely removing a coating by etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To obtain high accuracy pattern at the time of making a pattern of multi- crystal Si layer stacked on the glass base in the fine pattern technology of the semiconductor integral circuit by covering Si layer with Au thin film on which a macromolecule resin mask is installed and by removing Si layer and Au layer exposed after dry etching.
CONSTITUTION: On a glass base plate 1, a multi-crystal si layer 2 for making the pattern is stacked and then an Au layer 3 having about 100Å in whole surface is stuck. Next, in the designated part of above mentioned layer 3, a macromolecule mask 4 like polyglycidyl methacrylate is installed and after that the Au layer 3 and the Si layer 2 is undergone a dry etching by using a spatter method of parallel plain plate shape through a gas. By doing so, a fine particle 3' of a chemical compound including Au or of Au itself produced at the etching operation is covered to the side face of the mask 4, so no deformation is observed in the mask resulting that it is possible to make the shape of the layer 2 same as the shape of the mask 4. After that, the fine particle 3' is removed by iodine and the mask 4 is removed by O2 plasma.
COPYRIGHT: (C)1980,JPO&Japio
JP11395278A 1978-09-14 1978-09-14 Fabrication of fine pattern Pending JPS5539691A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11395278A JPS5539691A (en) 1978-09-14 1978-09-14 Fabrication of fine pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11395278A JPS5539691A (en) 1978-09-14 1978-09-14 Fabrication of fine pattern

Publications (1)

Publication Number Publication Date
JPS5539691A true JPS5539691A (en) 1980-03-19

Family

ID=14625312

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11395278A Pending JPS5539691A (en) 1978-09-14 1978-09-14 Fabrication of fine pattern

Country Status (1)

Country Link
JP (1) JPS5539691A (en)

Similar Documents

Publication Publication Date Title
JPS5656636A (en) Processing method of fine pattern
JPS5539691A (en) Fabrication of fine pattern
JPS57130431A (en) Manufacture of semiconductor device
JPS5469090A (en) Manufacture of semiconductor device
JPS5496363A (en) Electrode forming method for semiconductor device
JPS57198632A (en) Fine pattern formation
JPS55128830A (en) Method of working photoresist film
JPS5519873A (en) Forming method of metallic layer pattern for semiconductor
JPS5587436A (en) Method of producing semiconductor device
JPS5715423A (en) Manufacture of semiconductor device
JPS563679A (en) Formation of metallic pattern
JPS5635774A (en) Dry etching method
JPS5326575A (en) Ion etching method
JPS5797629A (en) Manufacture of semiconductor device
JPS56129326A (en) Dry etching
JPS54162460A (en) Electrode forming method
JPS5522833A (en) Manufacturing of semiconductor device
JPS54116882A (en) Manufacture of semiconductor device
JPS57122530A (en) Photoetching method
JPS56167329A (en) Piling joint setting mark to be used in fine processing exposure technology
JPS5690539A (en) Production of semiconductor device
JPS5799371A (en) Formation of resin film
JPS5492179A (en) Removing method for photo resist film
JPS5471052A (en) Method of producing metal pattern
JPS5648150A (en) Manufacture of semiconductor device