JPH06244178A - Ic processing device - Google Patents

Abstract

PURPOSE:To perform analysis, modification, etc., on the defective part of a finished IC by locally forming an insulating film, wiring layer, etc., at a desired part after cutting wiring in a layer below a protective film. CONSTITUTION:The title processing device is constituted of charged particle optical systems 104-106 which converge a high-luminance ion beam emitted from an ion source 65 into an ion beam spot having a small diameter, a blanking electrode 73 which starts and stops the irradiation with the ion beam, deflecting electrodes 75 and 76 which moves the ion beam spot for scanning, a sample stage 55 for mounting an IC, a secondary charged particle detector 86, etc. The device performs the cutting of wiring, formation of an insulating film, etc., by irradiating an area to be observed on the surface of the IC near an area where a film is to be locally formed with the ion beam spot by controlling the electrodes 75 and 76.

Description

Detailed Description of the Invention [0001] BACKGROUND OF THE INVENTION The present invention is applicable to fine integration of highly integrated devices.
Locally at the desired location of the IC element that corrects the wiring pattern
The present invention relates to an IC device processing apparatus for forming a film. [0002] 2. Description of the Related Art Semiconductor integrated circuits, GaAs devices, magnetic balls
Patterns for memory, Josephson devices, etc.
The width and the wiring width are becoming finer. Ie 3
Devices from μ to 2μ wide are realized, and 1.5μ, 1
Devices with μ and submicron wiring widths are being developed.
For these devices, conventionally, at the device development stage
Wiring cutting for debugging is also required at the device manufacturing stage.
For repairing defective areas, writing, resistance value, capacitance, adjustment
Some measures such as disconnecting and connecting some of the
It was The following is a typical example for debugging.
The cutting of the Al wiring will be described. The following are Au and Poli Sili
It is obvious that it can also be applied to wiring such as con. For semiconductor integrated circuits (hereinafter referred to as "IC")
In the design and development process, design defects and process defects
Therefore, the prototype chip does not work as it is.
There are many. In this case, to determine the defective part,
It is necessary to cut the side wiring and perform an operation test, etc.
It As a means for this in patterns of 5 μm or larger
While observing the device with a microscope,
Use the method of scratching with a thin metal needle attached
I was there. However, this method has a low success rate and is ripe.
Cannot be used in ICs with a 3μ pattern or less because it requires training
Is. The wiring of the IC is cut by the laser in FIG.
Shows the device. Laser beam 1a emitted from laser oscillator 1
Is reflected by the mirror 2 and then the combination of the lenses 3a and 3b
Expand the beam diameter by the beam expander 3 consisting of
The variable slits 5 and 6 reduce the rectangular pattern.
The image of the sample 8 placed on the stage 9 by the lens 7
Image on top. In this case, the reference light lamp 2a
These lights are reflected by the concave mirror 2b and are reflected by the lens 2c.
It is considered as a parallel beam and is distributed along the same path as the laser beam.
Since the image is formed on the line, use this to position the laser removal unit.
It becomes possible. That is, in FIG. 2a, the Al wiring part
11 is adjacent to the portion 10 without wiring. That is
2b has a cross section as shown in FIG.₂
Al wiring 15 is formed through the insulating layer 14 of FIG.
In FIG. 1, an image 12 of the slits 5 and 6 by the reference light 2d
Is projected, the width of the slit is set to the micrometer 5a,
6a to adjust the width of the wiring 11 to be cut
It After that, if the laser is irradiated, the laser light will be exactly the same.
An image is formed on the table 12, and this portion is removed. In this case
There was such a problem. That is, the laser melts
The scattered parts scatter around and adhere to adjacent parts, degrading the characteristics.
And may cause a short circuit. Also damage the lower Si
And a part of Si melts and rises
This causes a short circuit with the Al wiring. Also, beside the wiring
Even if it affects the part without adjacent Al wiring,
It damages Si and causes the Al-Si short circuit similar to the above.
Easy to make. This is mainly for positioning the laser irradiation area.
It is difficult to irradiate, and a part of the laser beam is applied to the part without Al wiring.
When heat is transferred or Al is scattered, the adjacent Si part
This is because it causes damage. In particular, as shown in FIG.
If the tubulation film 18 is coated, these
The film 18 is generally made of SiO 2.₂, Si₃N_FourIt is made of
Since it is transparent to laser light, it is directly processed by laser
The Al wiring 15 below does not absorb the laser and heat energy
When I received a ghee, I broke the upper passivation film and flew.
It will be released. Therefore, in this case, scatter
Compared to the case without a passivation film, the Al particles
It has a very high energy and can be seen in Figure 6.
It is easy to damage the lower part of the sea urchin and its surroundings.
The film itself may also crack. Further cutting part
Easily makes holes 20 in the passivation film,
Since there is no method to fill this, it is said that the characteristics will deteriorate.
There was such a problem. Further, as a fundamental problem, the IC is
And the high integration, wiring width from 2μ to 1.5, 1μ and
Laser processing against the tendency of narrowing to submicron
The wiring cutting method according to (1) has a limit. Ie shown in FIG.
The image projection method also produces the lens 21 as shown in FIG.
The beam is narrowed down by the
Even when processing a laser beam, the wavelength (possible
It is difficult to obtain a spot diameter of 0.5 μ under visual light.
Furthermore, in the laser processing method, the material absorbs laser light and
Is changed to heat and then blown away
Therefore, avoid the influence of surroundings such as heat conduction and melt jet.
Is impossible, and the processing area and heat affected area are
It was always getting bigger. Ie practical
The minimum processing size is about 1μ.
It is difficult to apply the laser processing method to the line pattern
Met. Further, as a conventional technique, Japanese Patent Laid-Open No. 56-801
No. 31, JP-A-56-94630, Apply
De, Physics, Letter "A High Intensity
Scanning ion probe with sub microphone
Lometer spot size (Appl. Phys. Lett. 34
(5), "A highintesity scanning ionprobe with
  submicrometer spot size ”) P310-311, 1979
Published March 1st, and Semiconductor Engineering Laboratory, RIKEN
Applied Physics Society of Japan
Application of beam to industry 132nd Committee 13th Symposium
Um "Ion implantation and submicron processing" Date 1982
February 3-5, pp. 19-22 "By liquid metal ion source
Micro focusing device "is known. Conventional technology
Also, sputter etching with a focused ion beam
The technology is only described. And
The SIM observation device was simply sputter-etched
It is nothing more than an observation of the condition. [0007] DISCLOSURE OF INVENTION Problems to be Solved by the Invention
Conventional method for cutting IC wiring by laser processing and its mounting
Eliminates the disadvantages of placement, and steps on ultrafine wiring of 1 μm or less
Completed VLSKI, ULSI, etc. with a protective film
For the IC element, disconnect the wiring existing under the protective film.
After disconnecting, form an insulating film, wiring layer, etc. locally at the desired location.
The failure time is analyzed and repaired.
Short circuit, yield improvement during development, etc.
An object of the present invention is to provide a processing device for such an IC device. [0008] The present invention achieves the above objects.
Liquid metal that emits a high-intensity ion beam to produce
The ion source and the high-brightness ion emitted from the liquid metal ion source.
A part of the on-beam near the center with high energy density is
Apertia means to put out and high taken out by the Apertia means
Focusing a bright ion beam on a narrow ion beam spot diameter
And a charged particle optical system that is focused by the charged particle optical system.
Blanking battery for irradiating and stopping the ion beam
Ion beam focused by a pole and the charged particle optics
A lens barrel having a deflection electrode for scanning a spot, and an IC
Focused by the sample stage where the element is installed and the charged particle optical system
Of the IC element by the focused ion beam spot.
Detects secondary electrons or ions generated from the surface
Gas near the surface of the secondary charged particle detector and the IC element
And a sample chamber equipped with a gas introducing means for introducing
Is a processing device for IC elements configured to form
The ion beam spot by controlling the deflection electrode.
The IC element near a desired location where a local film is to be formed
Scanning irradiation of the observation area on the surface to detect the secondary charged particles
Based on secondary electrons or secondary ions detected by the detector
In response to the deflection signal for controlling the deflection electrode,
Scanning ion microscopy for displaying enlarged SIM images for magnifying observation
And a magnifying glass observed under the scanning ion microscope.
Based on the large SIM image, the desired location on the IC device
The ion beam spot is scanned by the deflection electrode.
The gas is controlled by controlling the area and reacts with the gas introduced by the gas introducing means.
To locally form a film to control the blanking electrode.
And a control means for stopping the irradiation of the ion beam
It is a processing device of an IC element characterized by the above. The present invention also provides high brightness from multiple types of elements.
Liquid metal ion source for irradiating an ion beam and liquid gold
Of the high-intensity ion beams emitted from the genus ion source,
Aperture means to extract near the central part with high energy density
And a high-intensity ion beam emitted through the aperture means.
Mass separation hand that separates and emits a specific ion species in the chamber
A high-intensity ion beam that has been extracted stepwise is a thin ion beam
Charged particle optical system for focusing on spot diameter and charged particle light
Irradiate and stop the ion beam focused by the academic system.
Focused by a blanking electrode and the charged particle optical system.
And a deflection electrode for scanning the focused ion beam spot.
The lens barrel, the sample stage on which the IC element is installed, and the charged particles
The ion beam spot focused by the optics
Secondary electrons or secondary electrons generated from the surface of the IC element
Sample chamber with secondary charged particle detector for detecting ions
Processing of an IC element configured to form a vacuum container
A device for controlling the deflection electrode to control the ion beam.
Before the desired spot where the local spot is to be formed
The secondary load is formed by scanning and irradiating the observation area on the surface of the IC element.
For secondary electrons or secondary ions detected by an electron particle detector
The deflection signal for controlling the deflection electrode based on
Scanning for magnifying observation by displaying a magnified SIM image of the observation area
Equipped with an ion microscope and a magnified view with the scanning ion microscope
The location on the IC device based on the magnified SIM image
Place the ion beam spot on the deflection electrode at the desired location.
Blanking by controlling the scanning area by local film formation
A control for controlling the electrodes to stop the irradiation of the ion beam.
A device for processing an IC element characterized by having a control means.
is there. Further, the present invention provides high brightness of each predetermined ionic species.
And a plurality of liquid metal ion sources for irradiating an ion beam
Select multiple ion sources by switching between multiple liquid metal ion sources
And a switching means for extracting the high-intensity ion beam
A high-brightness image consisting of a specific ion species that is switched and emitted by
A part of the on-beam near the center with high energy density is
Apertia means to put out and high taken out by the Apertia means
Focusing a bright ion beam on a narrow ion beam spot diameter
And a charged particle optical system that is focused by the charged particle optical system.
Blanking battery for irradiating and stopping the ion beam
Ion beam focused by a pole and the charged particle optics
A lens barrel having a deflection electrode for scanning a spot, and an IC
Focused by the sample stage where the element is installed and the charged particle optical system
Of the IC element by the focused ion beam spot.
Detects secondary electrons or ions generated from the surface
A vacuum chamber with a sample chamber equipped with a secondary charged particle detector
A device for processing an IC element configured to
The ion beam spot is locally controlled by controlling the deflection electrode.
On the surface of the IC element in the vicinity of the desired location for film formation
The observation area of the target is scanned and irradiated with the secondary charged particle detector.
The deflection based on the emitted secondary electrons or secondary ions
Enlargement S of the observation area in response to a deflection signal for controlling the electrodes
With a scanning ion microscope that displays IM images and observes them magnified
Enlarged SI prepared by enlarging and observing with the scanning ion microscope
Based on the M image, the image is located at a desired position on the IC element.
The on-beam spot controls the scanning area by the deflection electrode.
Control and locally control the blanking electrode.
Note that a control means for stopping the irradiation of the ion beam is provided.
And an IC device processing device. [0011] In particular, in the case of the present invention, it is 0.3 to 0.1 μm or so.
The spot diameter below
Spa caused by collisions and scattering of ions with target atoms
Since it is a machining process, there is almost no influence on the surroundings due to thermal diffusion.
Therefore, it is possible to process and dimension less than 0.3μ.
And an ion beam with a spot diameter of 0.3 μm or less
Of the protective film (passive
(Syon film) Projected on the observation area of the surface and scanned to irradiate
Then, the observation area of the surface of the protective film which was scanned and projected and irradiated.
Secondary electrons or secondary ions generated from the secondary charged particles
Detect with a detector, and expand the observation area with a scanning ion microscope.
A large SIM image is displayed and magnified and observed.
Based on the enlarged SIM image shown in FIG.
The local scanning is attempted by controlling the scanning area by the pole.
At a location of 0.3 μm or less due to the charged particle optical system.
Ion beam projected with the lower ion beam spot diameter
By scanning and irradiating the film to locally form an insulating film, etc.
Can protect the wiring disconnection, etc.
It is also possible to form a wiring film and connect the cut wires.
It [0012] DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings. Figure
6 shows an embodiment of the wiring cutting device according to the present invention. The apparatus shown in FIG. 6 includes a pedestal 37 and a vacuum chamber.
The lens barrel 39 and the sample chamber 40 that form the container are connected to the sample chamber 40.
The sample exchange chamber 41, the vacuum exhaust system, the sample mass
Ku's stage 55, liquid metal ion source 65, control
(Bias) electrode 66, ion beam extraction electrode 6
7, aperture 69, electrostatic lenses 70, 71, 72,
Lasking electrode 73, aperture 74, deflection electrode 75,
76, filament power supply 77, control electrode power
Source 78, power source 79 for extraction electrode, electrode 8 for electrostatic lens
0, 81, high-voltage power supply 82, blanking electrode power supply 8
3, deflection electrode power source 84, power source control device 85, sample chamber
Secondary charged particle detector 86, SIM inserted in 40
(Scanning ion microscope) observation device 87, ion beam
And means 89 for preventing the disturbance of the spot due to the electric charge.
It The mount 37 is supported by an air support 38.
Earthquake-proof measures are taken. The sample chamber 40 and the sample exchange
The exchange chamber 41 is installed on the pedestal 37, and the sample chamber 40
A lens barrel 39 is installed on the above. The sample chamber 40 and the lens barrel 39 are connected to each other by a gate bar.
The sample 40 and the sample exchange chamber 41 are separated by a cylinder 43.
And are separated by another gate valve 43. The vacuum exhaust system is an oil rotary pump.
47, oil trap 48, ion pump 49, turbo
The molecular pump 50, valves 51, 52, 53, 54, and
It is configured to have. This vacuum exhaust system and the lens barrel 3
9, the sample chamber 40 and the sample exchange chamber 41 are vacuum pipes 44,
45 and 46, and these lens barrel 39 and sample chamber
40 and the sample exchange chamber 41 are vacuum pipes 44, 45, 46.
Are connected via the lens barrel 39, the sample chamber 40, and the sample.
Exchange room 41 to 10 ~^FiveIt became possible to make a vacuum below torr
ing. The above-described object table 55 includes a rotation introducing terminal 61,
62, 63 via X, Y, Z movement micro
Attached with the motors 56, 57, and 58,
The mounting table 55 is provided with the mounting table 55.
By the icrometers 56, 57, 58 and the moving ring 59,
Fine movement in X, Y and Z directions and rotation angle in the horizontal plane
Is adjusted. A sample table 60 is installed on the object table 55.
So that the sample is placed on the sample table 60.
ing. Then, the sample table 60 is fixed by the sample drawing tool 64.
So that it can move between the sample chamber 40 and the sample exchange chamber 41.
When exchanging the sample, open the gate valve 43 and
Pull out the table 60 to the sample chamber 40 and close the gate valve 43.
Then, open the door of the sample exchange chamber 41, exchange and place the sample,
After closing the door and performing the preliminary evacuation of the sample exchange chamber 41,
Open the valve 43 and insert the sample table 60 into the sample chamber 40.
It has become so. In addition, in FIG.
It is indicated by 0. The liquid metal ion source 65 is provided in the lens barrel 39.
It is provided on the head so as to face the sample chamber 40. This liquid
The body metal ion source 65 shown in FIG. 7 is made of an insulator.
Mounted base 650, attached to the Ves 650 in a U-shape
Made of filament 651,652, tungsten etc.
In addition, a spot is placed between the tips of both filaments 651 and 652.
Sharp needle 653 attached by welding or the like
And a metal 654 that is an ion source attached to the
It is configured to have. As a metal 654 that serves as an ion source
For example, Ca, In, Au, Bi, Sn, Cu or the like is used.
In addition, the filaments 651 and 652 have electrodes 65
As shown in FIG. 6 through 1'and 652 ', the high voltage power source 8
Connected to the filament power supply 77 connected to
It The control electrode 66 is a liquid metal ion.
Installed under the on-source 65 and connected to the high-voltage power supply 82
Connected to the concrete electrode power supply 78
Low positive and negative voltage at the installation position of the control electrode 66
Is applied to control the current that is the ion beam. The extraction electrode 67 for the ion beam is
It is installed under the control electrode 66 and has a high voltage power supply 8
2 is connected to the power supply 79 for the extraction electrode connected to
It And the filament of the liquid metal ion source 65
Supply current to 651 and 652, and 10 ~^FiveVacuum below torr
After being melted by heating in the
When a negative voltage of 10 KV is applied, the liquid metal ion source 6
No. 5 needle 653 from the extremely narrow area at the tip
Beam is pulled out. In addition, the ion beam in FIG.
The spot is shown at 68 and the spot is shown at 68 '. The aperture 69 is the same as that of the extraction electrode 67.
It is installed at the lower level and is extracted by the extraction electrode 67.
Only the central part of the ion beam can be extracted
There is. The pair of electrostatic lenses 70, 71 and 72 is an aperture.
It is arranged under the cheer 69 and is connected to the high voltage power supply 82.
Connected to the lens power sources 80 and 81. these
The electrostatic lenses 70, 71, 72 of
It is designed to focus the extracted ion beam
It The blanking electrode 73 is an electrostatic lens.
Installed below 72 and connected to controller 85
It is connected to the blanking electrode power source 83. This bu
The ranking electrode 73 uses an ion beam at an extremely high speed.
Scan in the direction orthogonal to the direction toward the sample, and
Outside the aperture 74 installed under the king electrode 73
Remove the beam and stop the irradiation of the ion beam to the IC element at high speed.
It is supposed to stop. The aperture 74 includes an electrostatic lens 70,
Figure 7 shows the spot of the ion beam focused by 71 and 72.
4 or 0.3 to 0.1 μm on the IC device shown in FIG. 16a.
Or, the projection image is formed with a spot diameter smaller than that.
ing. A pair of the deflection electrodes 75 and 76 is an aperture.
It is installed under A74 and is connected to the control device 85.
It is connected to the deflection electrode power source 84. This deflection electrode
75 and 76 are focused by the electrostatic lenses 70, 71 and 72
The spot of the focused ion beam is deflected in the X and Y directions.
On the IC element shown in FIG. 4 or 16a.
It is possible to connect with a spot diameter of 1 μm or less.
ing. Filament of the liquid metal ion source 65
Power supply 77, control electrode power supply 78, ion bee
Power supply 79 for the extraction electrode of the lens and power supplies 80, 81 for the lens
The high-voltage power supply 82 that applies voltage is of the order of several tens of KV.
used. The control device 85 is for blanking electrodes.
Through the power source 83 and the deflection electrode power source 84, a blank
The scanning electrode 73 and the deflection electrodes 75 and 76 with a constant pattern.
Control to operate according to the following. The secondary charged particle detector 86 is provided in the sample chamber 4
It is installed toward the sample which is an IC element in 0,
The blanking electrode is controlled by the control signal from the controller 85.
The blanking electrode 73 and the deflection electrode are
The deflection electrodes 75 and 76 are controlled via the polar power source 84,
A pad having steps of the IC element shown in FIG. 4 or 16a.
In the observation area on the surface of the oxidation film (protective film) 18,
Ions with a spot diameter of 0.3 to 0.1 μm or less
When the beam spot is scanned and irradiated,
Secondary electrons or 2 emitted from the surface of the tubulation film 18
Receives secondary ions and changes its intensity according to the level difference
And send the signal to the SIM observation device 87
Has become. The SIM observation device 97 is a cathode ray tube 8.
Eight. Then, the SIM observation device 87
In order to observe the area, the deflection electrode power supply 84
Receive signals related to the X- and Y-direction deflection of the beam.
The bright spot of the cathode ray tube 88 is scanned in synchronization with
The brightness of the bright spots of is sent from the secondary charged particle detector 86.
By changing according to the signal of the incoming current intensity,
At each point on the surface of the passivation film 18 having steps
SI to obtain a step image according to the secondary electron emission capability in
M, that is, the function of the scanning ion microscope,
It is designed for magnified observation. Of the spot due to the charge of the ion beam
The means 89 for preventing disturbance is provided between the deflection electrode 76 and the IC element.
It is placed. Figure of means 89 to prevent disturbance of this spot
The one shown in 8 is the one that intersects with the passing direction of the ion beam.
The electronic showers 890 and 891 are facing each other, and
The electronic showers 890 and 891 are cup-shaped main bodies 892 and
Of the filament 893 and the main body 892 provided inside the
And a grid-shaped extraction electrode 894 provided in the opening.
Is configured. Then, each electronic shower 890, 89
1 is drawn from the filament 893 by the extraction electrode 894.
The electron flow 895 is extracted with an accelerating voltage of about 00 V,
A stream 895 is emitted into the space through which the ion beam passes,
The beam is given a negative charge to neutralize it.
In FIG. 8, reference numeral 68 is an ion beam, and 75 and 76 are polarized beams.
A counter electrode, 90 indicates a sample which is an IC element. Next, referring to FIGS. 6 to 9a and 9b,
In addition to the operation of the element correction device of the embodiment,
An embodiment of the positive method will be described. Sample that is an IC device
90 is placed on the sample table 60 in the sample exchange chamber 41.
Then, the sample exchange chamber 41 is closed and the vacuum exhaust system
After evacuating, the sample chamber is opened via the sample drawer 64.
40, and it is placed on the stage 55. Then, the lens barrel 39 and the sample are evacuated by the vacuum exhaust system.
10 in the room 40⁶Vacuum to about torr, and the vacuum state
Keep on. Next, using the apparatus shown in FIG.
The IC chip or wafer shown in FIG. 4 or 16a.
Explain the method of installing on the stage 90 and cutting the wiring
Reveal First, the high voltage power source 82 is used to power the filament.
77, power supply 78 for control electrode, and extraction electrode
Activating the power supply 79, the aperture of the liquid metal ion source
A high-intensity ion beam is extracted from 69 and lens power is applied.
Actuating the sources 80, 81 to activate the electrostatic lenses 70, 71, 72
And according to Aperthia 70, 0.3 to 0.1 μm or so
Focus on the following spot system and adjust the ion beam irradiation conditions.
Control from the control device 85 with a low energy beam
Power supply 83 for blanking electrode and deflection electrode by signal
Blanking electrode 73 and deflection electrode 7 via power supply 84
5 and 76 are controlled to pass the IC chip or wafer
In the observation area on the surface of the basin film 18, 0.3-0.1 μm
Ion beam spot with a spot diameter of m or less
Of the passivation film 18 having steps
Output from the secondary charged particle detector 86 at each point on the surface
Passivation by secondary electrons or secondary ions
An enlarged image of the stepped surface of the film 18 is displayed by the SIM observation device 87.
Observed by the round tube 88 and obtained from the magnified image
FIG. 9A based on the step information of the passivation film 18 that is stored.
Range (cutting point) to cut the wiring of 1 μm or less shown in
To set. Then, set the in-beam irradiation conditions to sputtering.
The energy is 10 KeV or more so that it can be processed,
Wiring cut set by the control signal from the control device 85
At the point where it should be cut off, the gap of 0.3-0.1 μm or less
Scanning irradiation with an ion beam spot focused on the pot diameter
Then passivate as shown in FIG. 12a or 16b.
A hole is made in the membrane film 18 and further, as shown in FIG.
The wiring located under the hole is sputtered as shown in
Then remove and cut. In this case, make the scan width and the wiring width equal.
It is necessary to make it compatible with the deflection voltage control system.
Higher precision can be achieved. FIGS. 9a and 9b show the sputtering method in this case.
The case where the wiring is cut further is shown. In Figure 9a
IC chip or wafer covered with the basin film 18
Of the Al wiring above, the rectangular part indicated by 12 is cut off.
It is the range to be removed. At this time, as a SIM image
Based on the step position information of the observed passivation film 18,
The 12 parts that have been set are set as shown in Fig. 9b.
Bundled ion beams 200a, 200b, 200d, 200
Scanning with deflection electrodes 75 and 76 in the order of c, ..., 200z.
While performing focused irradiation, the passivation film 18 of the irradiation part
A hole is drilled in and the wiring of the irradiation part is removed to perform cutting. FIG. 10 shows an embodiment of the present invention.
6 is a reference diagram of the ion beam optics in the apparatus of FIG.
The configuration of the system is changed to the projection method of Apertia.
Of. That is, the ions emitted from the high-intensity ion source 210
The beam is flattened by electrostatic lenses 201, 202 and 203.
A row beam becomes an aperture 204, 205, 206, 2
It is incident on 07. This ion beam optical system is shown in Fig. 1.
It has the same structure as the laser optical system
Image on the sample 210 with lenses 208 and 209
It is to project. Where 211 is the projected image
You For example, the lenses 208 and 209 are lenses with a magnification of 40 times.
In the aperture part, the micrometer head
Adjust the cables 204a, 205a, 206a, 207a
If a 40μ rectangle is set with an accuracy of ± 2μ, there will be no aberration.
A rectangular ion beam of 1μ on the sample surface when viewed
The image will be set with an accuracy of ± 0.05μ. Shi
Therefore, highly accurate positioning can be easily performed, which is advantageous.
It In this case, in the rectangle 12 in FIG.
Set the aperture so that the beam is emitted and
The beam 11 is irradiated to cut the wiring 11. An ion beam optical system as shown in FIG. 6 is used.
As shown in FIG. 2b, a patch that is not the subject of the present invention.
-When disconnecting the wiring of an IC without a film
Al wiring 1 by ion beam sputtering
Only 5 can be removed accurately without damage to the surroundings,
A cross section as shown in FIG. 11 is obtained. Next, a passivation coat as shown in FIG.
When cutting the wiring that has
In the case of machining with a dome, the passivation film on the surface is
First, as shown in Fig. 12a, Al wiring 15 is used for processing.
The passivation film 18 is processed up to the surface of
The wiring 15 is processed to obtain a cross section as shown in FIG. 12b. This
Unlike the case of laser processing,
Scratches, cracks in the passivation film, to the bottom and adjacent parts
No damage is seen. FIG. 13 shows an apparatus according to another embodiment of the present invention.
A main sectional view is shown. Here, the vacuum exhaust system and the secondary electron image
The spray, sample exchange room, gantry, etc. are the same as in Fig. 6,
Abbreviated. The liquid metal ion source 65 is made of Al-Si, Au-
It is assumed to be an alloy ion source such as Si. Extraction electrode 66
And is controlled by the control electrode 67.
The beam of ion beams is made parallel by the lenses 70, 71, 72.
Beam, and part of it is taken by Aperture 101
Issued, EXB mass filter (mass separation device) 102
Control of EXB mass filter 102 when passing through
The electric field E and the magnetic field B applied to this by the part 115 are adjusted.
However, only ions of a certain mass go straight and the lower aperture
Ions of other mass pass through the beam 103
The direction is bent so that it is kicked by the aperture 103.
It can be prevented from reaching downward. Aeon going straight
Is focused by the focusing lenses 104, 105 and 106.
Through the blanking electrode 73 and the deflection electrodes 75 and 76.
Reach the sample surface 90. The sample chamber 102 is provided with an exhaust pump from the passage 119.
Exhausted by In the sample chamber 120, N₂Moth
Su, O₂Gas introduction from gas cylinder 109 such as gas
The slue 107 is installed and the cylinder valve is
Is controlled by the controller 117. Also installed in the sample chamber 120
The degree of vacuum inside the sample chamber 120
The controller 117 monitors a constant gas concentration.
The valve 108 is controlled so that the frequency becomes the same. In the sample chamber
Is a quadrupole mass spectrometer tube in addition to the secondary electron detector 86.
A secondary ion mass spectrometer 111 such as
90 when ion beam is irradiated
The system for mass spectrometry of secondary ions is one controller 118.
Control of the secondary ion mass spectrometer 111.
The signal of roller 112 goes into this. 113 is an ion
In the source power control unit, the current of the heater 65 of the ion source
The voltage of the electrode 66, the voltage of the control electrode 67, etc.
It's a troll. 114 is the power control of the first lens
The control unit controls the first lenses 70, 71, 72.
is there. Reference numeral 115 denotes a power supply control unit, which is an EXB mass filter 10
It controls the second power source. 116 is a power control unit
The power of the second lens 104, 105, 106 is also controlled.
Of. Reference numeral 118 denotes a control device, which is an ion source power source control unit.
113, power control unit 114 of the first lens, EXB mass
Filter power supply control unit 115 and second lens power supply control unit
116 and the like are all controlled. In addition, it is omitted in the figure
Power supply for blanking electrode 73 and deflection electrodes 75 and 76
The control unit is also controlled by the control device 118. FIG. 14a shows the output of the secondary ion mass spectrometer tube.
Is shown. A thin film of Al on Si as shown in FIG. 14b
From above the sample with
In this case, the secondary ion current is
Bullet shows only Al (solid line). But the boundary between Al and Si
When () becomes near, Si (dotted line) comes to be seen, and
This is replaced in the world, and if further processing continues, Al will come out.
Only Si will be lost. In this way processing is the boundary
Point t₁Can be detected. This signal
Is used, the control device 118 of FIG.
Time t₁Such as stopping the irradiation of the ion beam with
Control can be performed. According to FIG. 13, as shown in FIG.
After cutting the Al wiring except the passivation film,
The holes in the tubulation film can be filled. Sanawa
As the ion source 65, for example, an Au-Si alloy ion source
With the EXB mass separator 102 using Au ions
Take only the chisel and process it.
EXB mass separator after processing film and Al wiring
Change the electric field and magnetic field applied to
I will put it out. In addition, the valve 108 of the gas cylinder 109
Open, O₂Introduce the gas into the sample chamber 120 and use a vacuum gauge.
Controller 1 to measure the pressure and keep it constant
The opening and closing of the valve 108 is controlled by 17. In addition, the voltage applied to the first lens and the second lens
The pressure is changed by the power supply control units 114 and 116, and the ion beam is changed.
Finely collects on the sample part with energy of several KeV to several tens of eV.
Make it incident while being bundled. (When processing
Energy is over 10 KeV. ) Such low
In energy, the ion beam adheres to the sample surface and
Session is performed. As described above, FIG.
O at the opening of the film 18₂Si ion bee in the atmosphere
Irradiating the glass, which causes the SiO 2 as shown in FIG.₂film
111 can be deposited. O as a gas to be introduced₂Instead of N₂Using
Then Si₃N_FourThe film can also be deposited. This
Fill the hole in the passivation film above the cut part of the Al wiring.
The passivation film can be recoated.
Can prevent element deterioration and stabilize electrical characteristics.
Can be converted. 16a to 16e show the device shown in FIG.
This is a new embodiment. That is, the Al wiring runs in two layers, upper and lower.
And cut the lower layer with an ion beam at the intersection.
Here's how to turn it off. In FIG. 16a, SiO is formed on top of Si301.₂
Al wiring 302 runs right and left through the insulating film 309 of
On top of that₂Al wiring 304 is formed through the insulating film 303.
It runs in the direction perpendicular to the page. On top of that, SiO₂The Pa
A passivation film 305 is formed. In this case
In the following, the method of cutting only the Al wiring 309 at the bottom is as follows.
Shown in. In the apparatus shown in FIG. 13, the Al-Si combination is used as the ion source 65.
A with the EXB mass separator 102 using a gold ion source
l Only the ion beam is separated and taken out downward.
Irradiate the sample of a and process to the lower Al wiring,
Obtain a cross section such as b. Next, EXB mass separator 10
Change the electric field and magnetic field of 2 and move only the Si ion balm down.
Take out, and again from the gas cylinder 109₂The sample room 1
Introduction to 02. Also control the voltage of the lens
The Si ion beam is focused at an energy of several KeV or less.
One sample is irradiated. In this way details
By the method described above₂Of the upper Al wiring from the film
Deposition on the processed part up to the height of the bottom and a cross section as shown in Fig. 16c.
To get After that, open the sample chamber₂Stop the gas and exhaust it
EXB mass separator 102
To extract only Al, and the energy to a few KeV or less
16d to obtain an Al deposited layer such as 307 in FIG.
Reform the upper Al wiring. This is done in the same way as before
SiO on top₂A film 308 is deposited to form a passivation layer.
It By the following, the lower Al wiring at the intersection of the Al wiring
Only the cutting could be done. FIG. 13 shows the EXB using an alloy ion source.
Extract one type of metal with a mass separator
If there is no suitable alloy ion source,
If so, it is necessary to prepare and switch some kind of ion source. Figure
17a is an example of such a device, and FIG.
A cross section is shown. In FIG. 17a, the lens barrel portion 40
3 includes elements such as lens 413 deflector 414
Mu. The ion source part is a container 4 for a plurality of different element ion sources.
06a, 406b, 406c, ... are cylindrical rotating bodies 41
5 is attached to the vacuum container 4 connected to the lens barrel
It is housed in 16. These ion source containers are
Source parts 407a, 407b, 407c, ... Extraction electrode 40
8a, 408b, 408c, ... Control electrode 409
a, 409 ba, 409, ... Heater current,
High voltage cable 412 for pull-out voltage, control voltage, etc.
Branch through the introduction terminal 411 that doubles as a terminal
The cables 410a, 410b, 410c, ...
Introduced to On Source. 407a in FIG. 17a
Ion source is used in connection with the optical system.
The rotating body 415 is rotated about the axis 405 to rotate the ion source 40.
7b, 407c, ... Can be used by switching. This
In this device, the ion source is accurately aligned with the axis of the optical system.
The angle deflection mechanism, fine adjustment mechanism, and fixing mechanism
It is attached but omitted in the figure. With this device, as in the case of FIG.
Not only the metal ion species that makes a specific alloy, but also any liquid
Of body metal ion source (or other type of ion source)
The combination makes it possible to carry out the above-mentioned wiring repair process.
Become. In the above embodiment, a liquid metal ion source was used.
As mentioned above, other types of high intensity ion sources, eg
For example, cryogenic field ionization ion source, micro discharge type ion
The source may be applicable. [0052] According to the present invention, a wiring width of 1 μm or less is obtained.
Completion of VLSI, ULSI, etc. in which a protective film is coated on the wiring
The conventional laser processing method is good for the manufactured IC element.
The passivation coat was applied to the upper part, which was difficult to process.
For minute wiring parts such as those where wiring is cut
It is modified by local film formation on the
Wiring connection between lines is possible, resulting in analysis and correction of defective points
Etc. can be performed, and the development period can be significantly shortened
The effect that can improve yield at the time
Play.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a configuration diagram showing a conventional wiring cutting device using a laser. FIG. 2A is a plan view of an Al wiring portion of an IC showing a method of cutting an Al wiring therewith, and FIG. 2B is a sectional view of the same. FIG. 3 is a plan view showing the influence on the periphery when the Al wiring is cut by a laser. 4A and 4B are cross-sectional views of a sample. FIG. 5 is a configuration diagram showing a conventional wiring cutting device using a laser. FIG. 6 is a block diagram of an ion beam wiring cutting device according to the present invention. FIG. 7 is a diagram showing a liquid metal ion source. FIG. 8 is a diagram showing neutralization of a beam by an electron shower. 9A and 9B are front views showing wiring cutting by scanning with an ion beam. FIG. 10 is a reference view showing a configuration of an ion beam wiring cutting device according to a projection method, which is not an embodiment of the present invention. FIG. 11 is a sectional view of a sample. 12A and 12B are cross-sectional views of a sample. FIG. 13 is a configuration diagram of an ion beam wiring repair apparatus including the same gold ion source and a mass spectrometer. 14A is a diagram showing the output of the mass spectrometer, and FIG. 14B is a sectional view of the sample. FIG. 15 is a sectional view of a sample. 16A to 16E are cross-sectional views showing a method of cutting a lower wiring. FIG. 17A is a diagram showing an ion beam wiring cutting device provided with many ion mirrors, and FIG. 17B is a sectional view thereof. [Explanation of Codes] 37 ... Stand, 40 ... Sample Chamber 41 ... Sample exchange chamber, 55 ... Loading stage, 65 ... Liquid metal ion source, 85 ... Secondary charged particle detector.

Continued front page    (72) Inventor Mikio Hongo             Stock, 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa             Production Engineering Research Laboratory, Hitachi, Ltd.

Claims (1)

[Claims] 1. A liquid metal ion source that emits a high-intensity ion beam, an aperture means for extracting the vicinity of the central portion with high energy density among the high-intensity ion beams emitted from the liquid metal ion source, and a high-intensity ion extracted by the aperture means A charged particle optical system for focusing the beam to a narrow ion beam spot diameter, a blanking electrode for irradiating and stopping the ion beam focused by the charged particle optical system, and a scanning ion beam spot focused by the charged particle optical system. Detecting secondary electrons or secondary ions generated from the surface of the IC element by a lens barrel having a deflection electrode, a sample stage on which an IC element is installed, and an ion beam spot focused by the charged particle optical system. And a gas introducing means for introducing a gas into the vicinity of the surface of the IC element. A device for processing an IC element configured to form a vacuum chamber with a sample chamber, wherein the deflection electrode is controlled so that the ion beam spot is locally formed on a surface of the IC element near a desired position. Of the observation area is scanned and irradiated, and a deflection signal for controlling the deflection electrode is received based on secondary electrons or secondary ions detected by the secondary charged particle detector to display an enlarged SIM image of the observation area. A scanning ion microscope for magnifying and observing the ion beam spot at a desired position on the IC element based on the magnified SIM image magnified and observed by the scanning ion microscope to control a scanning region by the deflection electrode. And a control unit for controlling the blanking electrode to stop the irradiation of the ion beam by locally forming a film by a reaction with the gas introduced by the gas introducing unit. Processing of the IC element, characterized in that. 2. A sample exchange chamber connected to the sample chamber via a gate valve is provided so that the IC element can be placed on the sample table in the sample chamber from the sample exchange chamber via the gate valve. An IC device processing apparatus according to claim 1. 3. The IC device processing apparatus according to claim 1, wherein an electronic shower is provided in the sample chamber in order to prevent disturbance of an ion beam spot with which the IC device is irradiated. 4. The IC device processing apparatus according to claim 1, further comprising a nozzle as the gas introducing unit. 5. A liquid metal ion source for irradiating a high-intensity ion beam from a plurality of kinds of elements, and an aperture unit for extracting the vicinity of a central portion having a high energy density among the high-intensity ion beam emitted from the liquid metal ion source and the aperture unit are provided. Of the high-intensity ion beam emitted through the mass separation means for separating and emitting a specific ion species, the high-intensity ion beam extracted, and a charged particle optical system for converging the extracted high-intensity ion beam into a narrow ion beam spot diameter and the charged particle optics. Lens barrel including a blanking electrode for irradiating and stopping the ion beam focused by the system, a deflection electrode for scanning the ion beam spot focused by the charged particle optical system, and a sample stage on which an IC element is installed. Secondary electrons generated from the surface of the IC element by the ion beam spot focused by the charged particle optical system. Is a processing device of an IC device configured to form a vacuum chamber with a sample chamber provided with a secondary charged particle detector for detecting secondary ions, and controlling the deflection electrode to provide the ion beam spot. Is irradiated to the observation area on the surface of the IC element near a desired portion for local film formation by scanning and irradiating the deflection electrode based on the secondary electrons or secondary ions detected by the secondary charged particle detector. A scanning ion microscope for displaying and magnifying an enlarged SIM image of the observation area in response to a deflection signal to be controlled, and based on the enlarged SIM image magnified and observed by the scanning ion microscope, a desired image on the IC element is obtained. Control means for locally forming a film of the ion beam spot by controlling the scanning area by the deflection electrode to control the blanking electrode to stop the irradiation of the ion beam. Processing of the IC element, characterized in that was e. 6. The gas introducing means for introducing a gas is provided in the vicinity of the surface of the IC element in the sample chamber, and the local film formation is performed by a reaction with the gas. IC device processing equipment. 7. A plurality of liquid metal ion sources each irradiating a high-intensity ion beam of a predetermined ion species and a switching means for switching between the plurality of liquid metal ion sources to extract a high-brightness ion beam of a specific ion species and the switching means are switched. Of a high-intensity ion beam consisting of a specific ion species emitted by the electron beam, and an electric charge for converging the high-intensity ion beam extracted by the aperture means for extracting the vicinity of the central portion with high energy density into a narrow ion beam spot diameter. A lens barrel including a particle optical system, a blanking electrode for irradiating and stopping an ion beam focused by the charged particle optical system, and a deflection electrode for scanning an ion beam spot focused by the charged particle optical system, The sample stage on which the IC element is installed and the ion beam spot focused by the charged particle optical system I constructed a sample chamber and a secondary charged particle detector for detecting secondary electrons or secondary ions generated from the surface of the element so as to form a vacuum vessel
A device for processing a C element, wherein the deflection electrode is controlled to scan and irradiate the observation region on the surface of the IC element near the desired portion where the ion beam spot is to be locally deposited to the secondary charged particle. A scanning ion microscope that receives a deflection signal for controlling the deflection electrode based on secondary electrons or secondary ions detected by a detector and displays an enlarged SIM image of the observation region to perform enlarged observation. Based on the magnified SIM image magnified and observed with the ion microscope, the I
Control means for locally forming a film of the ion beam spot by controlling the scanning area of the deflection electrode to control the blanking electrode to stop irradiation of the ion beam at a desired position on the C element A device for processing an IC element characterized by: 8. The gas introducing means for introducing a gas is provided in the vicinity of the surface of the IC element in the sample chamber, and the local film formation is performed by a reaction with the gas. IC device processing equipment.