JPS5792831A - Exposure to charged beam - Google Patents

Exposure to charged beam

Info

Publication number
JPS5792831A
JPS5792831A JP16859780A JP16859780A JPS5792831A JP S5792831 A JPS5792831 A JP S5792831A JP 16859780 A JP16859780 A JP 16859780A JP 16859780 A JP16859780 A JP 16859780A JP S5792831 A JPS5792831 A JP S5792831A
Authority
JP
Japan
Prior art keywords
sample holder
wafer
cylinder
curved
held
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16859780A
Other languages
Japanese (ja)
Inventor
Mamoru Nakasuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16859780A priority Critical patent/JPS5792831A/en
Publication of JPS5792831A publication Critical patent/JPS5792831A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To enable to make a wafer to be held and fixed to a sample holder by a method wherein the circumferential part of the wafer is pressed to be held and fixed to a curved surface of the sample holder having the curved reference face constituting a part of a cylinder being convex downward or being convex upward. CONSTITUTION:The circumferential part of the wafer 1 is pressed mechanically onto the curved reference face 10a of the sample holder 1 having the curved reference face 10a constituting a part of the cylinder being convex upward, and the wafer 1 is fixed to be held to the sample holder 10 therewith. Then the sample holder 10 is transferred continuously along the axial direction (the X direction) of the cylinder, and an electron beam E is made to scan stepwisely only by the minute distance in the Y direction being at right angles to the X direction to draw one drawing region of the warer 1. Therefore one region to be drawn when the sample holder 10 is to be transferred continuously can be considered to be nearly the plane, and to change the supplementary value when the sample holder 10 is to be transferred continuously is needless. Accordingly favorable precision of patterning can be obtained without reducing precision of drawing. Moreover, the curved face 10a may be formed as to constitute a part of a cylinder being convex downward.
JP16859780A 1980-11-29 1980-11-29 Exposure to charged beam Pending JPS5792831A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16859780A JPS5792831A (en) 1980-11-29 1980-11-29 Exposure to charged beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16859780A JPS5792831A (en) 1980-11-29 1980-11-29 Exposure to charged beam

Publications (1)

Publication Number Publication Date
JPS5792831A true JPS5792831A (en) 1982-06-09

Family

ID=15870998

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16859780A Pending JPS5792831A (en) 1980-11-29 1980-11-29 Exposure to charged beam

Country Status (1)

Country Link
JP (1) JPS5792831A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0236072A2 (en) * 1986-03-05 1987-09-09 Eaton Corporation Ion beam implanter control system
JPS62260326A (en) * 1986-04-28 1987-11-12 エイ・テイ・アンド・ティ・コーポレーション Method of processing semiconductor wafer
US4784723A (en) * 1982-04-09 1988-11-15 Fujitsu Limited Method for producing a single-crystalline layer

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4784723A (en) * 1982-04-09 1988-11-15 Fujitsu Limited Method for producing a single-crystalline layer
EP0236072A2 (en) * 1986-03-05 1987-09-09 Eaton Corporation Ion beam implanter control system
JPS62260326A (en) * 1986-04-28 1987-11-12 エイ・テイ・アンド・ティ・コーポレーション Method of processing semiconductor wafer
US4724222A (en) * 1986-04-28 1988-02-09 American Telephone And Telegraph Company, At&T Bell Laboratories Wafer chuck comprising a curved reference surface

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