JPS57172734A - Exposing process for electronic beam - Google Patents
Exposing process for electronic beamInfo
- Publication number
- JPS57172734A JPS57172734A JP5812681A JP5812681A JPS57172734A JP S57172734 A JPS57172734 A JP S57172734A JP 5812681 A JP5812681 A JP 5812681A JP 5812681 A JP5812681 A JP 5812681A JP S57172734 A JPS57172734 A JP S57172734A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- region
- electronic beam
- rectangular
- illuminated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
Abstract
PURPOSE:To produce the pattern with high fidelity to the original drawing by a method wherein the extended region of the satellite line of a region is illuminated in addition to the electronic beam illumination to a rectangular region. CONSTITUTION:When the extended region 5 of the satellite line of a rectangular region 4 is illuminated by means of the electronic beams, said beams can reach every angle of the pattern to minimize the curvature diameter of the developed pattern angle producing the pattern with high fidelity to the rectangular original drawing.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5812681A JPS57172734A (en) | 1981-04-16 | 1981-04-16 | Exposing process for electronic beam |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5812681A JPS57172734A (en) | 1981-04-16 | 1981-04-16 | Exposing process for electronic beam |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57172734A true JPS57172734A (en) | 1982-10-23 |
Family
ID=13075281
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5812681A Pending JPS57172734A (en) | 1981-04-16 | 1981-04-16 | Exposing process for electronic beam |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57172734A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6182423A (en) * | 1984-09-29 | 1986-04-26 | Toshiba Corp | Charged beam lithography method |
JPS6189630A (en) * | 1984-10-09 | 1986-05-07 | Toshiba Corp | Exposing method by electron beam |
JPS6230321A (en) * | 1985-07-31 | 1987-02-09 | Toshiba Corp | Method and apparatus for exposure by electron beam |
JPS62133456A (en) * | 1985-12-06 | 1987-06-16 | Toshiba Corp | Resist pattern forming method |
-
1981
- 1981-04-16 JP JP5812681A patent/JPS57172734A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6182423A (en) * | 1984-09-29 | 1986-04-26 | Toshiba Corp | Charged beam lithography method |
JPS6189630A (en) * | 1984-10-09 | 1986-05-07 | Toshiba Corp | Exposing method by electron beam |
JPS6230321A (en) * | 1985-07-31 | 1987-02-09 | Toshiba Corp | Method and apparatus for exposure by electron beam |
JPS62133456A (en) * | 1985-12-06 | 1987-06-16 | Toshiba Corp | Resist pattern forming method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS57200042A (en) | Exposure method for chemically machinable photosensitive glass | |
JPS5328375A (en) | Inspecting method | |
JPS5412675A (en) | Electon beam exposure method | |
JPS57172734A (en) | Exposing process for electronic beam | |
DE2962376D1 (en) | Method of operating a raster-scan electron beam lithographic system | |
JPS52143776A (en) | Electron beam exposure apparatus | |
JPS5772327A (en) | Formation of resist pattern | |
JPS5388728A (en) | Method of forming pattern | |
JPS53143175A (en) | Electron beam drawing apparatus | |
JPS55128832A (en) | Method of making minute pattern | |
JPS521984A (en) | Process and apparatus for manufacturing a metal halide lamp | |
JPS52117578A (en) | Electron beam exposing method | |
JPS5420419A (en) | Large tank | |
JPS52115161A (en) | Electron gun for electron beam exposing device | |
JPS52113682A (en) | Trapezoid drawing apparatus | |
JPS52119079A (en) | Electron beam exposure | |
JPS5358773A (en) | Electron beam exposure method | |
JPS5234758A (en) | Process for the fabrication of a character plate | |
JPS5731136A (en) | Forming method for pattern | |
JPS5413334A (en) | Exposure | |
JPS51140895A (en) | Process for producing hydrogen from water | |
JPS5555528A (en) | Mask aligner | |
JPS5350978A (en) | Electron beam exposure method | |
JPS52119179A (en) | Electron beam exposing method | |
JPS53114744A (en) | Etching method |