JPS55157231A - Method of forming pattern by electron beam - Google Patents

Method of forming pattern by electron beam

Info

Publication number
JPS55157231A
JPS55157231A JP6547379A JP6547379A JPS55157231A JP S55157231 A JPS55157231 A JP S55157231A JP 6547379 A JP6547379 A JP 6547379A JP 6547379 A JP6547379 A JP 6547379A JP S55157231 A JPS55157231 A JP S55157231A
Authority
JP
Japan
Prior art keywords
wafer
electron beam
displacement
circuit
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6547379A
Other languages
Japanese (ja)
Other versions
JPH0121616B2 (en
Inventor
Hisashi Sugiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP6547379A priority Critical patent/JPS55157231A/en
Publication of JPS55157231A publication Critical patent/JPS55157231A/en
Publication of JPH0121616B2 publication Critical patent/JPH0121616B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals

Abstract

PURPOSE:To improve the superimposing accuracy of an electron beam to a pattern in a method of forming a pattern with an electron beam drawn to correct the displacement of the position thereof due to the warpage of a wafer by determining the electron beam irradiating position in response to the shape of the warpage of the wafer. CONSTITUTION:The displacement of the position of te entire wafer is obtained by an internal insertion approximate circuit 10 using a position mark detection signal 8 and a wafer warpage shape function 9 from the wafer. The displacement signal from the circuit 10 is applied to an electron beam rotation correcting circuit 11 and a stage movement correcting circuit 12 to correct the displacement of the position of the wafer and the correction signals from the circuits 11 and 12 are applied to a direct drawing circuit 13, which thus forms a pattern.
JP6547379A 1979-05-25 1979-05-25 Method of forming pattern by electron beam Granted JPS55157231A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6547379A JPS55157231A (en) 1979-05-25 1979-05-25 Method of forming pattern by electron beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6547379A JPS55157231A (en) 1979-05-25 1979-05-25 Method of forming pattern by electron beam

Publications (2)

Publication Number Publication Date
JPS55157231A true JPS55157231A (en) 1980-12-06
JPH0121616B2 JPH0121616B2 (en) 1989-04-21

Family

ID=13288105

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6547379A Granted JPS55157231A (en) 1979-05-25 1979-05-25 Method of forming pattern by electron beam

Country Status (1)

Country Link
JP (1) JPS55157231A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62159425A (en) * 1986-01-08 1987-07-15 Toshiba Mach Co Ltd Charged beam lithography
KR100319898B1 (en) * 2000-03-20 2002-01-10 윤종용 Method and apparatus for measuring the dimensional parameter of wafer
KR100461024B1 (en) * 2002-04-15 2004-12-13 주식회사 이오테크닉스 Chip-scale marker and marking method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62159425A (en) * 1986-01-08 1987-07-15 Toshiba Mach Co Ltd Charged beam lithography
KR100319898B1 (en) * 2000-03-20 2002-01-10 윤종용 Method and apparatus for measuring the dimensional parameter of wafer
KR100461024B1 (en) * 2002-04-15 2004-12-13 주식회사 이오테크닉스 Chip-scale marker and marking method

Also Published As

Publication number Publication date
JPH0121616B2 (en) 1989-04-21

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