JPS5710233A - Electron beam exposing method - Google Patents

Electron beam exposing method

Info

Publication number
JPS5710233A
JPS5710233A JP8478880A JP8478880A JPS5710233A JP S5710233 A JPS5710233 A JP S5710233A JP 8478880 A JP8478880 A JP 8478880A JP 8478880 A JP8478880 A JP 8478880A JP S5710233 A JPS5710233 A JP S5710233A
Authority
JP
Japan
Prior art keywords
electron beam
emitted
time
positions
respective positions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8478880A
Other languages
Japanese (ja)
Other versions
JPS6148772B2 (en
Inventor
Teruaki Okino
Nobuo Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Jeol Ltd
Nihon Denshi KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeol Ltd, Nihon Denshi KK filed Critical Jeol Ltd
Priority to JP8478880A priority Critical patent/JPS5710233A/en
Publication of JPS5710233A publication Critical patent/JPS5710233A/en
Publication of JPS6148772B2 publication Critical patent/JPS6148772B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To precisely expose a microminiature pattern by varying the quantity of electron beam emitted to the respective positions of a resist layer in accordance with time to allow the positions to be emitted to be left in vacuum after the emission of the electron beam and equalizing the progresses of crosslinking reactions at the respective positions of the resist layer. CONSTITUTION:An electron beam emitted from an electron gun 11 is converged, deflected and emitted to a substrate 18 on which an electron beam sensitive resist is, for example, coated, and an extremely small pattern is sequentially exposed on the respective positions on the substrate 18. The relationship between the vacuum leaving time and the exposure sensitivity is stored in advance in a computer 20 for controlling the emitting conditions or the like of the electron beam in the exposing step, and the quantity of the electron beam at the respective positions is controlled corresponding to the time from the emission of the positions to be emitted to the time in which it is taken out of the vacuum. For instance, it is controlled to lengthen the emitting time at the position in which the leaving time is, for example, shortened and the sensitivity is lowered. Since the difference of the sensitivity depending upon the positions to be emitted on the substrate can be compensated in this manner, the extremely small pattern can be precisely exposed.
JP8478880A 1980-06-23 1980-06-23 Electron beam exposing method Granted JPS5710233A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8478880A JPS5710233A (en) 1980-06-23 1980-06-23 Electron beam exposing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8478880A JPS5710233A (en) 1980-06-23 1980-06-23 Electron beam exposing method

Publications (2)

Publication Number Publication Date
JPS5710233A true JPS5710233A (en) 1982-01-19
JPS6148772B2 JPS6148772B2 (en) 1986-10-25

Family

ID=13840429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8478880A Granted JPS5710233A (en) 1980-06-23 1980-06-23 Electron beam exposing method

Country Status (1)

Country Link
JP (1) JPS5710233A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60196941A (en) * 1984-02-29 1985-10-05 Fujitsu Ltd Electron beam exposure
JPS6114720A (en) * 1984-06-29 1986-01-22 Fujitsu Ltd Electron beam exposure method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0336677U (en) * 1989-08-17 1991-04-10

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60196941A (en) * 1984-02-29 1985-10-05 Fujitsu Ltd Electron beam exposure
JPS6114720A (en) * 1984-06-29 1986-01-22 Fujitsu Ltd Electron beam exposure method
JPH0220133B2 (en) * 1984-06-29 1990-05-08 Fujitsu Ltd

Also Published As

Publication number Publication date
JPS6148772B2 (en) 1986-10-25

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