JPS56125833A - Exposing method for electron beam - Google Patents
Exposing method for electron beamInfo
- Publication number
- JPS56125833A JPS56125833A JP2869680A JP2869680A JPS56125833A JP S56125833 A JPS56125833 A JP S56125833A JP 2869680 A JP2869680 A JP 2869680A JP 2869680 A JP2869680 A JP 2869680A JP S56125833 A JPS56125833 A JP S56125833A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- resist
- resist film
- section
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Electron Beam Exposure (AREA)
Abstract
PURPOSE:To prevent the electrification at an electron beam scanning section as well as to enable to perform a highly accurate patterning by a method wherein an electron beam sensitive resist film is coated on an insulating material and the resist having conductive property is used when the electron beam is scanned for exposure on the desired part of the resist film. CONSTITUTION:The electron beam sensitive resist having conductive property is applied on the insulating material and an electron beam pattern is drawn by scanning the electron beam on the desired section of the resist film in the earthed state of the resist film. As the conductive resist, there are positive type resist such as polymethyl methacrylate polybuten-1-sulfone and the like whereon conductive fine powder such as carbon or the like is diepersed, and polyglycidyl methacrylate and the like. Through these procedures, the electrification of the electron beam scanning section and the curving of the electron beam of the adjoining section are prevented and a highly accurate resist pattern can be formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2869680A JPS56125833A (en) | 1980-03-07 | 1980-03-07 | Exposing method for electron beam |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2869680A JPS56125833A (en) | 1980-03-07 | 1980-03-07 | Exposing method for electron beam |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56125833A true JPS56125833A (en) | 1981-10-02 |
Family
ID=12255633
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2869680A Pending JPS56125833A (en) | 1980-03-07 | 1980-03-07 | Exposing method for electron beam |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56125833A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61125019A (en) * | 1984-11-16 | 1986-06-12 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Manufacture of ic and photoconductive photoresist composite used therefor |
JPS63254728A (en) * | 1987-04-10 | 1988-10-21 | Matsushita Electronics Corp | Forming method for resist pattern |
JPS63254729A (en) * | 1987-04-10 | 1988-10-21 | Matsushita Electronics Corp | Forming method for resist pattern |
US5019485A (en) * | 1988-10-13 | 1991-05-28 | Fujitsu Limited | Process of using an electrically conductive layer-providing composition for formation of resist patterns |
-
1980
- 1980-03-07 JP JP2869680A patent/JPS56125833A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61125019A (en) * | 1984-11-16 | 1986-06-12 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Manufacture of ic and photoconductive photoresist composite used therefor |
JPS63254728A (en) * | 1987-04-10 | 1988-10-21 | Matsushita Electronics Corp | Forming method for resist pattern |
JPS63254729A (en) * | 1987-04-10 | 1988-10-21 | Matsushita Electronics Corp | Forming method for resist pattern |
US5019485A (en) * | 1988-10-13 | 1991-05-28 | Fujitsu Limited | Process of using an electrically conductive layer-providing composition for formation of resist patterns |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1514109A (en) | Method of making resist mask on a substrate | |
JPS56125833A (en) | Exposing method for electron beam | |
JPS52143776A (en) | Electron beam exposure apparatus | |
JPS5427369A (en) | Pattern formation method | |
JPS51147262A (en) | Electronic beam exposure method | |
JPS5677843A (en) | Resist pattern forming method | |
JPS53147465A (en) | Forming method of patterns for lift-off | |
JPS5652751A (en) | Photomask correcting method | |
JPS5556629A (en) | Pattern forming method | |
JPS5443681A (en) | Electron beam light-exposing method | |
JPS5772327A (en) | Formation of resist pattern | |
JPS56125834A (en) | Exposing method for electron beam | |
JPS53114676A (en) | Electron beam exposure method | |
JPS5679428A (en) | Working of ultra-fine article | |
JPS5442979A (en) | Electron beam exposure device | |
JPS55120134A (en) | Apparatus for electron-beam lithography | |
JPS57115832A (en) | Resist pattern formation for fine processing | |
JPS56114943A (en) | Negative type resist material for electron beam | |
JPS57132008A (en) | Measuring method for pattern size | |
JPS57128030A (en) | Exposing method for electron beam | |
JPS53135578A (en) | Mark protection method | |
JPS5741637A (en) | Microstep tablet | |
JPS55156329A (en) | Manufacture for integrated element | |
JPS57205739A (en) | Dry type plate making method | |
JPS5732444A (en) | Formation of resist pattern |