JPS5732444A - Formation of resist pattern - Google Patents

Formation of resist pattern

Info

Publication number
JPS5732444A
JPS5732444A JP10719880A JP10719880A JPS5732444A JP S5732444 A JPS5732444 A JP S5732444A JP 10719880 A JP10719880 A JP 10719880A JP 10719880 A JP10719880 A JP 10719880A JP S5732444 A JPS5732444 A JP S5732444A
Authority
JP
Japan
Prior art keywords
resist
resist material
film
resist pattern
solvent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10719880A
Other languages
Japanese (ja)
Inventor
Jiro Naito
Yasuhiro Yoneda
Tateo Kitamura
Toshisuke Kitakoji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10719880A priority Critical patent/JPS5732444A/en
Publication of JPS5732444A publication Critical patent/JPS5732444A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)

Abstract

PURPOSE:To form a resist pattern with high sensitivity and high resolution by coating a substrate with a resist material prepared by adding disulfonyl chloride to a positive type resist material, causing a crosslinking reaction by heat treatment, exposing the resulting film to ionized radiation, and dissolving the exposed part in a solvent. CONSTITUTION:A substrate is coated with a resist material prepared by adding disulfonyl chloride such as benzenedisulfonyl chloride to a positive type resist material such as polymethyl methacrylate, and a crosslinking reaction is caused by heat treatment at about 120-250 deg.C to form a resist film having a 3-dimensional network structure. The film is exposed to ionized radiation, and the exposed part alone is dissolved in a solvent to form a resist pattern with high sensitivity and less reduction in the resist film thickness during development, that is, high resolution.
JP10719880A 1980-08-06 1980-08-06 Formation of resist pattern Pending JPS5732444A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10719880A JPS5732444A (en) 1980-08-06 1980-08-06 Formation of resist pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10719880A JPS5732444A (en) 1980-08-06 1980-08-06 Formation of resist pattern

Publications (1)

Publication Number Publication Date
JPS5732444A true JPS5732444A (en) 1982-02-22

Family

ID=14452960

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10719880A Pending JPS5732444A (en) 1980-08-06 1980-08-06 Formation of resist pattern

Country Status (1)

Country Link
JP (1) JPS5732444A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002228245A (en) * 2001-01-30 2002-08-14 Kawamura Electric Inc Mounting structure for square louver
JP2007308909A (en) * 2006-05-17 2007-11-29 Matsushita Electric Works Ltd Flexible drain for eaves gutter

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002228245A (en) * 2001-01-30 2002-08-14 Kawamura Electric Inc Mounting structure for square louver
JP2007308909A (en) * 2006-05-17 2007-11-29 Matsushita Electric Works Ltd Flexible drain for eaves gutter

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