JPS6461915A - Formation of pattern - Google Patents
Formation of patternInfo
- Publication number
- JPS6461915A JPS6461915A JP21780387A JP21780387A JPS6461915A JP S6461915 A JPS6461915 A JP S6461915A JP 21780387 A JP21780387 A JP 21780387A JP 21780387 A JP21780387 A JP 21780387A JP S6461915 A JPS6461915 A JP S6461915A
- Authority
- JP
- Japan
- Prior art keywords
- development
- pattern
- positive type
- film
- type resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To reduce a proximity effect, to inhibit an extent in the cross direction and to form a pattern having high dimensional accuracy and a high contrast by decreasing a developing rate before or on its mid-way of development when a positive type resist is developed and the pattern is shaped. CONSTITUTION:A base body (such as a semiconductor substrate, a metallic film on the substrate, an insulating film, etc.), 1 to be processed is surface- treated, and the adhesive properties of a positive type resist are improved. A positive type electron-beam resist film 2 is applied, and heat treatment for ten min at 100 deg.C is executed for scattering a solvent. The positive type resist film 2 is irradiated selectively with electron beams 3 to draw a desired pattern, and a latent image 4 is shaped. The whole is dipped in a developer, and static development is conducted. Development is interrupted and the whole is washed by water, and moisture is dried by a nitrogen blow. Consequently, a surface insoluble layer 5 is formed onto an exposed section. Development is performed again, and the latent image 4 is dissolved. The number of the repeated processes of the development, washing by water and drying is executed twice to ten times according to film thickness, thus completely shaping the pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21780387A JPS6461915A (en) | 1987-09-02 | 1987-09-02 | Formation of pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21780387A JPS6461915A (en) | 1987-09-02 | 1987-09-02 | Formation of pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6461915A true JPS6461915A (en) | 1989-03-08 |
Family
ID=16709980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21780387A Pending JPS6461915A (en) | 1987-09-02 | 1987-09-02 | Formation of pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6461915A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0419073A2 (en) * | 1989-09-20 | 1991-03-27 | Fujitsu Limited | Process for production of a semiconductor device |
| EP0698825A1 (en) * | 1994-07-29 | 1996-02-28 | AT&T Corp. | An energy sensitive resist material and a process for device fabrication using the resist material |
| US5783367A (en) * | 1989-09-20 | 1998-07-21 | Fujitsu Limited | Process for production of semiconductor device and resist developing apparatus used therein |
| JP2007271174A (en) * | 2006-03-31 | 2007-10-18 | Fujitsu General Ltd | Ceiling embedded type air conditioner |
-
1987
- 1987-09-02 JP JP21780387A patent/JPS6461915A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0419073A2 (en) * | 1989-09-20 | 1991-03-27 | Fujitsu Limited | Process for production of a semiconductor device |
| US5783367A (en) * | 1989-09-20 | 1998-07-21 | Fujitsu Limited | Process for production of semiconductor device and resist developing apparatus used therein |
| US6033134A (en) * | 1989-09-20 | 2000-03-07 | Fujitsu Limited | Resist developing apparatus used in process for production of semiconductor device |
| EP0698825A1 (en) * | 1994-07-29 | 1996-02-28 | AT&T Corp. | An energy sensitive resist material and a process for device fabrication using the resist material |
| JP2007271174A (en) * | 2006-03-31 | 2007-10-18 | Fujitsu General Ltd | Ceiling embedded type air conditioner |
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