JPS6435549A - Resist pattern forming method - Google Patents

Resist pattern forming method

Info

Publication number
JPS6435549A
JPS6435549A JP62192965A JP19296587A JPS6435549A JP S6435549 A JPS6435549 A JP S6435549A JP 62192965 A JP62192965 A JP 62192965A JP 19296587 A JP19296587 A JP 19296587A JP S6435549 A JPS6435549 A JP S6435549A
Authority
JP
Japan
Prior art keywords
temp
heat treatment
resist
amss
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62192965A
Other languages
Japanese (ja)
Other versions
JP2506800B2 (en
Inventor
Hisashi Watanabe
Yoshihiro Todokoro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP62192965A priority Critical patent/JP2506800B2/en
Publication of JPS6435549A publication Critical patent/JPS6435549A/en
Application granted granted Critical
Publication of JP2506800B2 publication Critical patent/JP2506800B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Abstract

PURPOSE:To bring out the best characteristics of a resist and to ensure both high sensitivity and low resistivity especially for AmSS by subjecting a resist film to heat treatment at a prescribed temp., exposure in a prescribed shape, heat treatment at a temp. above the former heat treatment temp. and development. CONSTITUTION:A film 2 of ammonium polystyrenesulfonate (AmSS) as an electrically conductive negative type resist is formed on a quartz substrate 1, heat treated in N2 with a clean oven and exposed with electron beams 3 having a prescribed pattern. The film 2 is then heat treated at a temp. above the former heat treatment temp. and developed with water as a developer to form a pattern 4. The best characteristics of the resist can be brought out and both high sensitivity and low resistivity can be ensured especially for AmSS.
JP62192965A 1987-07-31 1987-07-31 Method of forming resist pattern Expired - Lifetime JP2506800B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62192965A JP2506800B2 (en) 1987-07-31 1987-07-31 Method of forming resist pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62192965A JP2506800B2 (en) 1987-07-31 1987-07-31 Method of forming resist pattern

Publications (2)

Publication Number Publication Date
JPS6435549A true JPS6435549A (en) 1989-02-06
JP2506800B2 JP2506800B2 (en) 1996-06-12

Family

ID=16299987

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62192965A Expired - Lifetime JP2506800B2 (en) 1987-07-31 1987-07-31 Method of forming resist pattern

Country Status (1)

Country Link
JP (1) JP2506800B2 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5357974A (en) * 1976-11-05 1978-05-25 Mitsubishi Electric Corp Electron beam exposure method
JPS5461531A (en) * 1977-10-25 1979-05-17 Fuji Yakuhin Kogyo Kk Thermal development of electron beam resist
JPS58115435A (en) * 1981-12-14 1983-07-09 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン Formation of patterned photoresist
JPS61210348A (en) * 1985-03-11 1986-09-18 ヘキスト・セラニ−ズ・コ−ポレイシヨン Manufacture of photographic material

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5357974A (en) * 1976-11-05 1978-05-25 Mitsubishi Electric Corp Electron beam exposure method
JPS5461531A (en) * 1977-10-25 1979-05-17 Fuji Yakuhin Kogyo Kk Thermal development of electron beam resist
JPS58115435A (en) * 1981-12-14 1983-07-09 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン Formation of patterned photoresist
JPS61210348A (en) * 1985-03-11 1986-09-18 ヘキスト・セラニ−ズ・コ−ポレイシヨン Manufacture of photographic material

Also Published As

Publication number Publication date
JP2506800B2 (en) 1996-06-12

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