JP2506800B2 - Method of forming resist pattern - Google Patents
Method of forming resist patternInfo
- Publication number
- JP2506800B2 JP2506800B2 JP62192965A JP19296587A JP2506800B2 JP 2506800 B2 JP2506800 B2 JP 2506800B2 JP 62192965 A JP62192965 A JP 62192965A JP 19296587 A JP19296587 A JP 19296587A JP 2506800 B2 JP2506800 B2 JP 2506800B2
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- resist
- temperature
- resist pattern
- amss
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明はレジストパターンの形成方法に関するもので
ある。The present invention relates to a method for forming a resist pattern.
従来の技術 リソグラフィ技術はパターン形成の基本となる技術で
ある。リソグラフィ技術を用いたレジストパターンの形
成工程は、通常、レジストの塗布，熱処理，露光，現像
からなっている。これらの工程の中で、塗布後の熱処理
工程は、レジストの感度，解像度を決定する一つの要因
である。しかし、この熱処理温度を、レジストのいろい
ろな特性に対応させて、最適温度に設定するのは難し
い。Conventional Technology Lithography technology is a basic technology for pattern formation. The process of forming a resist pattern using a lithographic technique usually includes resist coating, heat treatment, exposure, and development. Among these processes, the heat treatment process after coating is one factor that determines the sensitivity and resolution of the resist. However, it is difficult to set the heat treatment temperature to the optimum temperature in accordance with various characteristics of the resist.
たとえば、導電性ネガ形レジストであるポリスチレン
スルフォン酸アンモニウム（略称AmSS）の場合、熱処理
温度を高くすると、感度は高くなるが、導電性は低くな
る。For example, in the case of a conductive negative resist, ammonium polystyrene sulfonate (abbreviation: AmSS), when the heat treatment temperature is increased, the sensitivity increases, but the conductivity decreases.
発明が解決しようとする問題点 以上に述べたように、従来の、レジスト塗布，熱処
理，露光および現像の四工程からなるレジストパターン
の形成方法では、レジストのいろいろな特性を満足させ
ることが困難であった。Problems to be Solved by the Invention As described above, it is difficult to satisfy various characteristics of the resist by the conventional method of forming a resist pattern including four steps of resist coating, heat treatment, exposure and development. there were.
問題点を解決するための手段 以上の問題点を解決する目的でなされた本発明のレジ
ストパターンの形成方法は、基板上にレジストを塗布
し、所定温度で熱処理した後、所定形状の露光を行い、
さらに前記所定温度よりも高い温度の熱処理を施した
後、現像処理を施してレジストパターンを形成する方法
である。Means for Solving Problems The resist pattern forming method of the present invention made for the purpose of solving the above problems is to apply a resist on a substrate, heat-treat at a predetermined temperature, and then perform exposure of a predetermined shape. ,
Further, it is a method of forming a resist pattern by performing heat treatment at a temperature higher than the predetermined temperature and then developing.
作用 本発明のレジストパターンの形成方法によれば、レジ
ストのいろいろな特性を最大限にひき出すことができ
る。Effects According to the resist pattern forming method of the present invention, various characteristics of the resist can be maximized.
実施例 本発明の実施例を第１図に基いて説明する。はじめ
に、第１図ａに示すように、石英基板１の上に導電性ネ
ガ形レジストであるポリスチレンスルフォン酸アンモニ
ウム（以下AmSSと略記する）膜を、0.5μｍの厚さで形
成する。なお、この膜厚はAmSSの19％水溶液を2500rpm
で塗布する条件設定によって得られる。この後、クリー
ンオーブンを用いてN2中で100℃,30分の熱処理を行う。
次に、第１図ｂに示すように、露光量250μC/cm2で電子
ビーム３を用いて所定パターンの電子ビーム露光を行
う。本発明では、こののち、さらに、前記の熱処理より
も高い温度の熱処理、すなわち、クリーンオーブンを用
いてN2中で200℃,30分間の熱処理を行う。そして、最後
に、水を現像液として用いて、30秒間現像することによ
り、第１図ｃに示すように、所定形状のパターン４が形
成される。Embodiment An embodiment of the present invention will be described with reference to FIG. First, as shown in FIG. 1A, a polystyrene negative ammonium sulfonate (hereinafter abbreviated as AmSS) film, which is a conductive negative resist, is formed on the quartz substrate 1 to a thickness of 0.5 μm. In addition, this film thickness is 2500 rpm with a 19% aqueous solution of AmSS.
It can be obtained by setting the conditions for coating with. After that, heat treatment is performed at 100 ° C. for 30 minutes in N 2 using a clean oven.
Next, as shown in FIG. 1b, electron beam exposure of a predetermined pattern is performed using the electron beam 3 at an exposure dose of 250 μC / cm 2 . In the present invention, this is followed by a heat treatment at a temperature higher than the above heat treatment, that is, a heat treatment at 200 ° C. for 30 minutes in N 2 using a clean oven. Then, finally, by using water as a developing solution and developing for 30 seconds, a pattern 4 having a predetermined shape is formed as shown in FIG. 1c.
ところで、AmSS塗布工程の後の熱処理の条件を、上記
の露光後の熱処理条件、と同一条件すなわち200℃,30分
間に設定して熱処理を行った場合は、電子ビームによる
帯電のために、石英基板上では、正常なパターンの描画
ができない。第２図は、膜厚0.5μｍのAmSSを塗布した
のち施す熱処理の温度とシート抵抗の関係を示す図であ
り、熱処理温度が高くなるにつれてシート抵抗が高くな
り、特に約120℃を超えると急激に高くなる傾向を示
す。すなわち、このことによって上記の不都合が生じ
る。By the way, when the heat treatment condition after the AmSS coating step is set to the same condition as the above heat treatment condition after exposure, that is, at 200 ° C. for 30 minutes and the heat treatment is performed, the quartz is charged due to electron beam charging. A normal pattern cannot be drawn on the board. Fig. 2 is a graph showing the relationship between the sheet resistance and the temperature of the heat treatment applied after coating AmSS with a film thickness of 0.5 µm. The sheet resistance increases as the heat treatment temperature increases, especially when the temperature exceeds 120 ° C. It tends to be high. That is, this causes the above inconvenience.
したがって、塗布後の熱処理温度を120℃未満に設定
して、シート抵抗値を低くおさえることにより、石英基
板上で正常なパターンの描画が可能となる。一方、AmSS
の感度は、これの塗布後の熱処理温度を高めることによ
って高くなる。第３図はAmSSの感度の温度依存性を示す
図であり、第３図から明らかなように、熱処理温度が低
い場合、感度が低くなり、レジストとしての機能が損わ
れる。第４図は、本発明の方法、すなわち、塗布後の熱
処理温度を低くして、露光後に、200℃,30分の熱処理を
行った場合の感度を示す。AmSSの電子ビーム露光に対す
る感度は、露光後の熱処理温度により決定されるため、
塗布後の熱処理温度が低い場合でも露光後の熱処理温度
を高めることで高い感度を得ることができる。すなわ
ち、実施例で示したように、AmSSの塗布後の熱処理温度
を120℃未満に設定し、露光後の熱処理温度を120℃以上
の高温に設定することにより、レジストとして好ましい
高い感度と、低い抵抗率を両立させることができ、絶縁
性基板上に良好なパターンを描画することが可能にな
る。Therefore, by setting the heat treatment temperature after coating to less than 120 ° C. and keeping the sheet resistance value low, it becomes possible to draw a normal pattern on the quartz substrate. On the other hand, AmSS
The sensitivity of is increased by increasing the heat treatment temperature after coating. FIG. 3 is a diagram showing the temperature dependence of the sensitivity of AmSS. As is clear from FIG. 3, when the heat treatment temperature is low, the sensitivity becomes low and the function as a resist is impaired. FIG. 4 shows the sensitivity of the method of the present invention, that is, the heat treatment at a low temperature after coating and the heat treatment at 200 ° C. for 30 minutes after the exposure. Since the sensitivity of AmSS to electron beam exposure is determined by the heat treatment temperature after exposure,
Even if the heat treatment temperature after coating is low, high sensitivity can be obtained by increasing the heat treatment temperature after exposure. That is, as shown in the examples, by setting the heat treatment temperature after coating AmSS to less than 120 ° C. and setting the heat treatment temperature after exposure to a high temperature of 120 ° C. or higher, high sensitivity preferable as a resist and low. The resistivities can be compatible with each other, and a good pattern can be drawn on the insulating substrate.
発明の効果 本発明のレジストパターンの形成方法によると、レジ
ストの特性を最大限にひき出すことができる。特に、Am
SSに適用した場合、従来は困難であった、高い感度と低
い抵抗値の両立が可能となり、絶縁性基板上のパターン
の描画に際して大きな効果が奏される。EFFECTS OF THE INVENTION According to the resist pattern forming method of the present invention, the resist characteristics can be maximized. Especially Am
When applied to SS, it is possible to achieve both high sensitivity and low resistance value, which was difficult in the past, and a great effect is exhibited in drawing a pattern on an insulating substrate.
第１図は本発明にかかるレジストパターンの形成方法の
実施例を説明する工程順の断面図、第２図はAmSSのシー
ト抵抗の熱処理温度依存性を示す図、第３図はAmSS感度
の熱処理温度依存性を示す図、第４図は露光後に熱処理
を施した場合のAmSSの感度の熱処理温度依存性を示す図
である。 １……石英基板、２……ポリスチレンスルフォン酸アン
モニウム（AmSS）膜、３……電子ビーム、４……パター
ン。FIG. 1 is a cross-sectional view in the order of steps for explaining an embodiment of a method for forming a resist pattern according to the present invention, FIG. 2 is a view showing the heat treatment temperature dependence of the sheet resistance of AmSS, and FIG. 3 is a heat treatment for AmSS sensitivity. FIG. 4 is a diagram showing the temperature dependence, and FIG. 4 is a diagram showing the heat treatment temperature dependence of the sensitivity of AmSS when heat treatment is applied after exposure. 1 ... Quartz substrate, 2 ... Ammonium polystyrene sulfonate (AmSS) film, 3 ... Electron beam, 4 ... Pattern.
Claims (2)
温度で熱処理した後、所定形状の露光を行い、さらに、
前記所定温度よりも高い温度の熱処理を施した後、現像
処理を施すことを特徴とするレジストパターンの形成方
法。1. A conductive resist is coated on a substrate, heat-treated at a predetermined temperature, and then exposed in a predetermined shape.
A method of forming a resist pattern, which comprises performing a heat treatment at a temperature higher than the predetermined temperature and then performing a development treatment.
モニウムであることを特徴とする特許請求の範囲第
（１）項に記載のレジストパターンの形成方法。2. The method for forming a resist pattern according to claim 1, wherein the resist is polystyrene ammonium sulfonate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62192965A JP2506800B2 (en) | 1987-07-31 | 1987-07-31 | Method of forming resist pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62192965A JP2506800B2 (en) | 1987-07-31 | 1987-07-31 | Method of forming resist pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6435549A JPS6435549A (en) | 1989-02-06 |
| JP2506800B2 true JP2506800B2 (en) | 1996-06-12 |
Family
ID=16299987
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62192965A Expired - Lifetime JP2506800B2 (en) | 1987-07-31 | 1987-07-31 | Method of forming resist pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2506800B2 (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS593847B2 (en) * | 1976-11-05 | 1984-01-26 | 三菱電機株式会社 | Electron beam exposure method |
| JPS5929853B2 (en) * | 1977-10-25 | 1984-07-24 | 富士薬品工業株式会社 | Heat development method for electron beam resist |
| US4389482A (en) * | 1981-12-14 | 1983-06-21 | International Business Machines Corporation | Process for forming photoresists with strong resistance to reactive ion etching and high sensitivity to mid- and deep UV-light |
| DE3666638D1 (en) * | 1985-03-11 | 1989-11-30 | Hoechst Celanese Corp | Process for the production of photoresist patterns |
-
1987
- 1987-07-31 JP JP62192965A patent/JP2506800B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6435549A (en) | 1989-02-06 |
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