JPS55111132A - Amending method of photomask - Google Patents

Amending method of photomask

Info

Publication number
JPS55111132A
JPS55111132A JP1837579A JP1837579A JPS55111132A JP S55111132 A JPS55111132 A JP S55111132A JP 1837579 A JP1837579 A JP 1837579A JP 1837579 A JP1837579 A JP 1837579A JP S55111132 A JPS55111132 A JP S55111132A
Authority
JP
Japan
Prior art keywords
metallic
defect part
photomask
white point
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1837579A
Other languages
Japanese (ja)
Other versions
JPS5922372B2 (en
Inventor
Mikio Hongo
Takeoki Miyauchi
Masao Mitani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP54018375A priority Critical patent/JPS5922372B2/en
Publication of JPS55111132A publication Critical patent/JPS55111132A/en
Publication of JPS5922372B2 publication Critical patent/JPS5922372B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To facilitate the precision amendment of a defect part in a photomask by a method wherein a white point defect part of a photomask, at that point the pattern is lacked, and its neighborhood are applied with a metallic chelate compound, and heating the defect part only, the metal is deposited. CONSTITUTION:On a white point defect part 4 and its neighborhood of a metallic wiring pattern, which is prepared on the surface of a semiconductor substrate 1, a metallic chelate polymer film 11 such as a metallic chelate of ethyleneimine is formed, and radiating a laser beam or an electron beam to the defect point only, the metallic chelate polymer is heated and decomposed. By this method, the metal is deposited only in the heated part, and forms a metallic film on the substrate 1. Washing it in a solvent and dissolving the undecomposed metallic chelate polymer, a metallic film is retained only on the white point defect part, and the metallic wiring pattern is amended easily and high precisely.
JP54018375A 1979-02-21 1979-02-21 Photomask modification method Expired JPS5922372B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54018375A JPS5922372B2 (en) 1979-02-21 1979-02-21 Photomask modification method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54018375A JPS5922372B2 (en) 1979-02-21 1979-02-21 Photomask modification method

Publications (2)

Publication Number Publication Date
JPS55111132A true JPS55111132A (en) 1980-08-27
JPS5922372B2 JPS5922372B2 (en) 1984-05-26

Family

ID=11969957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54018375A Expired JPS5922372B2 (en) 1979-02-21 1979-02-21 Photomask modification method

Country Status (1)

Country Link
JP (1) JPS5922372B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1986000426A1 (en) * 1984-06-26 1986-01-16 Seiko Instruments & Electronics Ltd. Mask repairing apparatus
JPS6125146A (en) * 1984-07-13 1986-02-04 Hitachi Ltd Correcting method of defect of photomask
JPS6286364A (en) * 1985-10-11 1987-04-20 Nec Corp Method for selectively depositing metallic oxide film
JPS63228158A (en) * 1987-03-17 1988-09-22 Fujitsu Ltd Method for correcting mask defect
US4930439A (en) * 1984-06-26 1990-06-05 Seiko Instruments Inc. Mask-repairing device
DE10151724B4 (en) * 2000-10-19 2007-03-22 Laserfront Technologies, Inc., Sagamihara Method and apparatus for correcting a pattern film on a semiconductor substrate

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1986000426A1 (en) * 1984-06-26 1986-01-16 Seiko Instruments & Electronics Ltd. Mask repairing apparatus
US4930439A (en) * 1984-06-26 1990-06-05 Seiko Instruments Inc. Mask-repairing device
JPS6125146A (en) * 1984-07-13 1986-02-04 Hitachi Ltd Correcting method of defect of photomask
JPS6286364A (en) * 1985-10-11 1987-04-20 Nec Corp Method for selectively depositing metallic oxide film
JPS63228158A (en) * 1987-03-17 1988-09-22 Fujitsu Ltd Method for correcting mask defect
DE10151724B4 (en) * 2000-10-19 2007-03-22 Laserfront Technologies, Inc., Sagamihara Method and apparatus for correcting a pattern film on a semiconductor substrate

Also Published As

Publication number Publication date
JPS5922372B2 (en) 1984-05-26

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