JPS602956A - Manufacture of photomask - Google Patents

Manufacture of photomask

Info

Publication number
JPS602956A
JPS602956A JP58110548A JP11054883A JPS602956A JP S602956 A JPS602956 A JP S602956A JP 58110548 A JP58110548 A JP 58110548A JP 11054883 A JP11054883 A JP 11054883A JP S602956 A JPS602956 A JP S602956A
Authority
JP
Japan
Prior art keywords
photomask
pinholes
laser light
mask pattern
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58110548A
Other languages
Japanese (ja)
Inventor
Toshio Sakakibara
利夫 榊原
Tetsuo Fujii
哲夫 藤井
Yasushi Higuchi
安史 樋口
Hiroyuki Yamane
山根 宏幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP58110548A priority Critical patent/JPS602956A/en
Publication of JPS602956A publication Critical patent/JPS602956A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72Repair or correction of mask defects

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To repair defect parts of a mask pattern easily and securely by forming metallic deposited layers at the defect parts by laser light irradiation. CONSTITUTION:For example, the mask pattern 12 which is formed on the surface of a transparent glass substrate 11 and contains metal such as Cr has defects such as pinholes 13a and 13b and a pattern absent part 14. This photomask is formed by forming a film 15 of material containing metallic material Cr on the surface. Then, the pinholes 13a and 13b are irradiated with laser light as shown by arrows 16a and 16b to form Cr deposited layers 17a and 17b in the pinholes 13a and 13b by thermal decomposition, chemical reaction, photochemical reaction, etc. which are thus charged and repaired. The pattern absent part 14 is irradiated with scanning laser light within a range shown by arrows 18a and 18b to form a Cr deposited layer 19 on the substrate 11 corresponding to the part 14. Then, the film 15 is removed by solvent or etching, etc., lastly.

Description

【発明の詳細な説明】 この発明は、例えばピンホール等の欠陥を補修するよう
にしたフォトマスクの製造方法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a photomask in which defects such as pinholes are repaired.

半導体製造プロセスにおいて用いられるフォトマスクを
作成する場合、光の透過を遮へいするマスクパターン部
にピンホールのような欠陥が発生することがある。この
ような欠陥は補修しなければ、フォトマスクとしての機
能を発揮することのできないものであシ、このための補
修技術が種々に考えられている。例えばリフォト法とし
て知られているもので、フォトマスクA?ターン上にフ
ォトレジスト膜を形成し、マスクツ2ターンの欠陥部分
に対して露光し、現像した後、欠陥部に対して再び金属
を蒸着するものでおる。しかし、このような手段はフォ
トマスクを作成する工程を再び繰シ返すようなものとと
るため、多大な時間と労力を必要とする。
When creating a photomask for use in a semiconductor manufacturing process, defects such as pinholes may occur in mask pattern portions that block light transmission. Unless such defects are repaired, the photomask cannot function as a photomask, and various repair techniques have been considered for this purpose. For example, in what is known as the rephoto method, Photomask A? A photoresist film is formed on the turns, the defective parts of the two turns of the mask are exposed to light, and after development, metal is deposited again on the defective parts. However, such a method requires a lot of time and effort since it involves repeating the process of creating a photomask again.

この発明は上記のような点に鑑みなされたもので、フォ
トマスクに対してピンホールのような欠陥が存在したよ
うな場合でも、このピンホールのような欠陥を容易且つ
確実に補修して、フォトマスク作製成効率をよシ向上さ
せることができるようにするフォトマスクの製造方法を
提供しようとするものである。
This invention was made in view of the above points, and even when a defect such as a pinhole exists in a photomask, the defect such as a pinhole can be easily and reliably repaired. It is an object of the present invention to provide a method for manufacturing a photomask that can greatly improve photomask manufacturing efficiency.

すなわち、この発明に係るフォトマスクの製造方法は、
欠陥を有するマスクツ母ターン上にノ臂ターン材料に対
応した金屑を含む材料による被膜を形成し、この被膜を
介して上記欠陥部にレーデ光を照射して、その欠陥部分
に金属析出層を形成させるようにするものである。
That is, the method for manufacturing a photomask according to the present invention includes:
A film made of a material containing gold chips corresponding to the arm turn material is formed on the mask main turn having defects, and the defective part is irradiated with radar light through this film to form a metal precipitated layer on the defective part. It is intended to cause the formation of

以下図面に基きこの発明の一実施例を説明する。第1図
は欠陥を有するフォトマスクを示したもので、透明なガ
ラス基板1ノの表面には、Cr等の金鴇制料を含むマス
クパターン12が形成されるもので、このマスクパター
ン12にはピンホール13a、13bによる欠陥が存在
するものとする。また、破線で示すような・ぞターン抜
は部分14が存在するものとする。
An embodiment of the present invention will be described below based on the drawings. FIG. 1 shows a photomask with defects, in which a mask pattern 12 containing a gold pigment such as Cr is formed on the surface of a transparent glass substrate 1. It is assumed that defects due to pinholes 13a and 13b exist. Further, it is assumed that there is a part 14 where there is no turn as shown by the broken line.

このような欠陥を有するフォトマスクを補修するには、
まず第2図に示すようにマスクパターン12部を言むガ
ラス基板1ノの表面部に、マスク・リーン材料に含まれ
る金属Crと同じ金属材料Crを含む材料で、被膜15
を形成する。
To repair a photomask with such defects,
First, as shown in FIG. 2, a coating 15 is applied to the surface of the glass substrate 1, which corresponds to the mask pattern 12, with a material containing the same metal Cr as the mask lean material.
form.

そして、矢印16a、16bで示すようにピンホール1
3a、13b部に対してレーザ光を照射し、熱分解、化
学反応、光化学反応等によって一ンホール13a、13
b内にCr析出fdjJ7&。
Then, as shown by arrows 16a and 16b, pinhole 1
A laser beam is irradiated to the parts 3a and 13b, and one hole 13a and 13 is formed by thermal decomposition, chemical reaction, photochemical reaction, etc.
Cr deposited in b fdjJ7&.

17bを形成し、このピンホール13 a 、 13b
を充填して修正を行なう。
17b, and these pinholes 13a, 13b
Fill in and make corrections.

また・やターン抜は部分14の範囲に対応して、すなわ
ち矢印18h、18bの範囲でレーデ光を走査照射する
ことにより、パターン抜は部分14に対応して基板ll
上にCr析出層19を形成する。そして、最後に被膜1
5を浴剤、エツチング等によって除去することによシ、
第3図に示すように欠陥部分が補修され、またパターン
抜は部分を追加した状態のフォトマスクが完成されるも
のである。
In addition, pattern punching is performed by scanning and irradiating the radar light in the range of the portion 14, that is, in the range of arrows 18h and 18b.
A Cr precipitation layer 19 is formed thereon. And finally, coating 1
By removing 5 using bath additives, etching, etc.
As shown in FIG. 3, a photomask is completed in which the defective portions have been repaired and the pattern punched portions have been added.

上記実施例ではガラス基板11上にマスクパターン12
を含んでCrを含む材料による被膜16を形成したが、
これは第4図に示すように別体のガラス基板20の面に
同じ(Crを含む材料による被膜21を形成し、との被
膜2)の面をガラス基板11上のマスクパターン12面
に対接するようにしてもよい。そして、ガラス基板20
の背面から前実力瓜例同様にレーデ光を順次照射し、ま
たレーデ光の走葺を打法うことによシ、Or析出層17
a、17bさらに19による補修が行なえるものである
。このようにすれば、レーデ光照射後においてガラス基
板2oを外せば、被膜21もフォトマスク部から引き離
され、前実施例の被膜除去作業は不要となる。
In the above embodiment, the mask pattern 12 is placed on the glass substrate 11.
The coating 16 was formed of a material containing Cr, but
As shown in FIG. 4, the same surface (coating 21 made of a material containing Cr is formed on the surface of a separate glass substrate 20) is placed on the surface of the mask pattern 12 on the glass substrate 11. It may be arranged so that they are in contact with each other. And glass substrate 20
By sequentially irradiating the Rede light from the back side in the same manner as in the previous example, and by applying the Rede light to the surface, the Or precipitated layer 17 was formed.
A, 17b and 19 can be repaired. In this way, if the glass substrate 2o is removed after irradiation with Radical light, the coating 21 is also separated from the photomask portion, and the coating removal operation of the previous embodiment becomes unnecessary.

尚、上記実施例において使用される被fJ115゜2ノ
の材料としでは、前述したようにマスクパターン材料に
対応した例えばCr等の金属を含む高分子制料、レジス
ト等が考えられる。
As the material for fJ115.degree. 2 used in the above-mentioned embodiments, a polymeric material containing a metal such as Cr, a resist, etc., which correspond to the mask pattern material as described above, may be used.

以上のようにこの発明によれば、フォトマスク上の欠陥
部分を簡単に補修することのできるものであり、フォト
マスク作製時の成効率を充分に高くすることのできるも
のである。
As described above, according to the present invention, defective portions on a photomask can be easily repaired, and the production efficiency when manufacturing a photomask can be sufficiently increased.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図乃至第3図はこの発明の一実施例に係るフォトマ
スクの補修過程を説明する図、第4図はこの発明の他の
実施例を説明する図である。 1ノ・・・ガラス基板、12・・・マスクツやターン、
14・・・マスク抜は部分、15.21・・・被膜、1
7J1 # J 7b 、 J !p−Cr析出層。 第1図 第2図
1 to 3 are diagrams for explaining a photomask repair process according to one embodiment of the present invention, and FIG. 4 is a diagram for explaining another embodiment of the present invention. 1. Glass substrate, 12. Masks and turns,
14...Mask removal is partial, 15.21...Coating, 1
7J1 # J 7b, J! p-Cr precipitated layer. Figure 1 Figure 2

Claims (1)

【特許請求の範囲】[Claims] 透明基板上にマスクパターンを形成する手段と、上記マ
スクツ4ターン上にとのノぐターン材料に対応する金属
を含む材料にょシ被膜を形成する手段と、この被膜を介
して上記マスクツ4ターンに存在する欠陥部分にレーデ
光を照射する手段とを具備し、とのレーザ光照射によっ
て上記欠陥部分に金属析出層を形成させるようにしたこ
とを特徴とするフォトマスクの製造方法。
means for forming a mask pattern on a transparent substrate; means for forming a film of a material containing a metal corresponding to the turn material on the four turns of the mask; 1. A method for manufacturing a photomask, comprising means for irradiating an existing defective portion with a laser beam, and forming a metal deposited layer on the defective portion by irradiating the laser beam with the laser beam.
JP58110548A 1983-06-20 1983-06-20 Manufacture of photomask Pending JPS602956A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58110548A JPS602956A (en) 1983-06-20 1983-06-20 Manufacture of photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58110548A JPS602956A (en) 1983-06-20 1983-06-20 Manufacture of photomask

Publications (1)

Publication Number Publication Date
JPS602956A true JPS602956A (en) 1985-01-09

Family

ID=14538610

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58110548A Pending JPS602956A (en) 1983-06-20 1983-06-20 Manufacture of photomask

Country Status (1)

Country Link
JP (1) JPS602956A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59232678A (en) * 1983-06-16 1984-12-27 Miyachi Denshi Kk Method for controlling power source of fusing device
JPS63228158A (en) * 1987-03-17 1988-09-22 Fujitsu Ltd Method for correcting mask defect
JPH03181945A (en) * 1989-12-12 1991-08-07 Mitsubishi Electric Corp Method for correcting pattern chipping defect of mask
JPH0385180U (en) * 1989-12-22 1991-08-28
JP2023023184A (en) * 2021-08-04 2023-02-16 株式会社エスケーエレクトロニクス Pattern correction method and photomask

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59232678A (en) * 1983-06-16 1984-12-27 Miyachi Denshi Kk Method for controlling power source of fusing device
JPS63228158A (en) * 1987-03-17 1988-09-22 Fujitsu Ltd Method for correcting mask defect
JPH03181945A (en) * 1989-12-12 1991-08-07 Mitsubishi Electric Corp Method for correcting pattern chipping defect of mask
JPH0385180U (en) * 1989-12-22 1991-08-28
JP2023023184A (en) * 2021-08-04 2023-02-16 株式会社エスケーエレクトロニクス Pattern correction method and photomask

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