JPS6286364A - Method for selectively depositing metallic oxide film - Google Patents

Abstract

PURPOSE:To enable the correction of transmission defects by irradiating energy beams on a film of an org. polymer contg. a metal, developing the film to form a pattern and converting the pattern into a metallic oxide pattern by oxidation with oxygen plasma. CONSTITUTION:An energy-beam sielding pattern 2 having pinholes 8 is formed on a mask substrate 1, and a film 3 of an org. polymer contg. a metal such as Cr of Fe is deposited on the film of the pattern 2. The polymer used may be represented by the formula. Energy beams such as electron beams 4 of 5-50kV are generated from an energy beam source 6, deflected with a deflector 5 and irradiated on the desired part 7 of the polymer film 3 to carry out polymn. or decomposition by a selectively caused reaction. The film 3 is then developed to form an org. film pattern 9 contg. the metal, and the resulting mask is treated with oxygen plasma in an incineration atmosphere. By the treatment, carbon in the org. film is removed and a modified metallic oxide film pattern 10 is obtd.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a selective metal oxide film deposition method, and particularly to a method for forming a mask pattern used in photolithography.

[Conventional technology]

Conventionally, in order to form a metal oxide film pattern, a metal oxide film is deposited on the entire surface, and then a pattern is formed using a conventional photolithography technique or a desired pattern is formed. A method in which a resist pattern is formed to be complementary to the pattern, then a metal oxide is deposited on the entire surface, and when removing the resist, the metal oxide of the resist is selectively removed using the difference in adhesion force. , the so-called lift-off method was used.

[Problem that the invention seeks to solve]

By the way, when modifying a mask pattern used in photo-etching technology, the method of depositing a metal oxide film on the entire surface and photo-etching it has the disadvantage that it tends to damage the already formed pattern. There is. Furthermore, the lift-off method has the disadvantage that the resist pattern is deformed during deposition of the metal oxide film, resulting in damage, and there has been no effective method in the past. An object of the present invention is to solve the above-mentioned problems, and to provide a method suitable for correcting mask white defects.

[Means for solving problems]

The present invention comprises the steps of depositing a metal-containing organic polymer film that polymerizes or decomposes when irradiated with energy rays on a substrate to be processed, irradiating the layer with energy rays to cause a selective reaction, and depositing the layer on the substrate. The process of phenomenon and turning into a former turn,
This mask/arm turn correction method is characterized by performing a step of oxidizing the organic film in oxygen plasma to change it into a metal oxide/f-turn.

[Effect]

Metal oxide films such as Cr and Fe have low transmittance to ultraviolet rays and soft X-rays, and the present method can effectively correct transmission defects.

〔Example〕

Hereinafter, a method for modifying a mask pattern will be explained using the illustrated embodiment as an example.

In FIG. 1, it is assumed that a mother turn 2 of an energy shielding line having a pinhole 8 is formed on a mask substrate 1. An organic polymer film 3 containing a metal such as CryF. is deposited on the film of the nine turns 2. For example, a polymer having the following structural formula is used for the metal-containing organic polymer film 3.

An energy beam, e.g., a 5-50 kV electron beam 4, is applied onto this polymer film 3 from an energy beam gap 6, and is deflected by a deflector 5, and irradiated onto a desired area 7 to cause a selective reaction, resulting in polymerization. or decompose. In this example, negative-tone organic TFI
It is a reamer film. In the case of the Izo type, the location where the electron beam 4 is irradiated changes. In general, the area of the corrected portion is small, so a negative tone resist is considered advantageous, but it is not particularly limited to the edges.

Then, development is performed to form an alloy network organic film/f-turn 9 as shown in FIG. Since there is no problem as long as the energy ray layer is small, make the correction/correction larger than pinhole 8.
It is desirable to form an f-turn.

Then, as shown in FIG. 3, the mask is treated in an ashing π atmosphere, for example in oxygen plasma, to remove carbon in the metal-containing organic film and transform it into a modified metal oxide film.

〔Effect of the invention〕

Although it is natural that the method of the present invention can be used for forming Z4 turns in general, as in JM-, it is particularly useful for mask/F-turn correction because it may affect existing patterns or cause abnormalities in the corrected shape. This has the effect of easily correcting defects that were previously difficult to correct, and improving the yield of mask production.

[Brief explanation of drawings]

Figure 1 is a configuration diagram showing an embodiment of the present invention, Figures 2 and 3 are
The figure is a cross-sectional view of the mask substrate showing the process.
1 is a mask substrate, 2 is an energy shielding layer, 3 is a metal-containing organic film layer, 4 is an energy beam, 5 is a deflector, 6 is an energy beam source, 7 is a selectively irradiated portion of the energy beam, and 8 is a defect (pinhole). ), 9 indicates an S metal organic film, and 10 indicates a modified metal oxide film. - “Knee Figure 1

Claims (1)

[Claims] (1) A step of depositing a metal-containing organic polymer film that polymerizes or decomposes when irradiated with energy rays on a substrate to be processed, a step of irradiating the film with energy rays to cause a selective reaction, and developing the film. 1. A selective metal oxide film deposition method comprising the steps of patterning the organic film and oxidizing the organic film in oxygen plasma to transform it into a metal oxide pattern.