JPS5588057A - Production of photo mask - Google Patents
Production of photo maskInfo
- Publication number
- JPS5588057A JPS5588057A JP16329978A JP16329978A JPS5588057A JP S5588057 A JPS5588057 A JP S5588057A JP 16329978 A JP16329978 A JP 16329978A JP 16329978 A JP16329978 A JP 16329978A JP S5588057 A JPS5588057 A JP S5588057A
- Authority
- JP
- Japan
- Prior art keywords
- film
- pattern
- mask
- resist
- metal chromium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
PURPOSE:To improve the productivity and reduce the cost, by using the specified resist pattern as mask, exposing the shield film part mainly composed of exposed metal chromium film in a plasma of carbon fluoride base, and obtaining etching resistant film of reverse pattern. CONSTITUTION:A metal chromium film (shield film) 2 is coated on a glass substrate 1, and a negative type photo resist is spread thereon. After prebaking, ultraviolet rays are radiated to the desired part of this resist film to draw a pattern, and further a resist pattern 3 is formed after developing process. This pattern is exposed in CHF3 plasma, and etching resistant film of reverse pattern 4 is formed in the exposed metal chromium film 2 part. Then, removing the resist pattern 3, dipping in a specified chemical etching solution, the exposed part of the metal chromium film 2 is removed, using the etching resistant film 4 as the mask, and a positive type photo mask 6 having a mask pattern 5 is obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16329978A JPS5588057A (en) | 1978-12-27 | 1978-12-27 | Production of photo mask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16329978A JPS5588057A (en) | 1978-12-27 | 1978-12-27 | Production of photo mask |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5588057A true JPS5588057A (en) | 1980-07-03 |
Family
ID=15771180
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16329978A Pending JPS5588057A (en) | 1978-12-27 | 1978-12-27 | Production of photo mask |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5588057A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4514489A (en) * | 1983-09-01 | 1985-04-30 | Motorola, Inc. | Photolithography process |
KR20020095703A (en) * | 2001-06-15 | 2002-12-28 | 주식회사 하이닉스반도체 | Method for manufacturing phase shift mask |
CN103019042A (en) * | 2012-11-29 | 2013-04-03 | 上海华力微电子有限公司 | Method for improving stability of alignment precision of high-transparency mask plate |
-
1978
- 1978-12-27 JP JP16329978A patent/JPS5588057A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4514489A (en) * | 1983-09-01 | 1985-04-30 | Motorola, Inc. | Photolithography process |
KR20020095703A (en) * | 2001-06-15 | 2002-12-28 | 주식회사 하이닉스반도체 | Method for manufacturing phase shift mask |
CN103019042A (en) * | 2012-11-29 | 2013-04-03 | 上海华力微电子有限公司 | Method for improving stability of alignment precision of high-transparency mask plate |
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