JPS5794750A - Formation of micropattern - Google Patents
Formation of micropatternInfo
- Publication number
- JPS5794750A JPS5794750A JP17126480A JP17126480A JPS5794750A JP S5794750 A JPS5794750 A JP S5794750A JP 17126480 A JP17126480 A JP 17126480A JP 17126480 A JP17126480 A JP 17126480A JP S5794750 A JPS5794750 A JP S5794750A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- photoresist
- layer
- several
- micropattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Drying Of Semiconductors (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
PURPOSE:To accurately form a micropattern in a high yield by coating a substrate with a photosensitive film, imagewise exposing the substrate, and exposing it to plasma contg. oxygen. CONSTITUTION:A film 2 such as a silicon oxide film is formed on a substrate 1, and it is coated with a photoresist 3. The substrate is selectively irradiated with ultraviolet light through a photomask. Thus, the photoresist is separated into an exposed part 3b and an unexposed part 3a. By carrying out said processes in an atmosphere contg. nitrogen, a thin reaction product layer 3c soluble slightly in a developer and having several 100-several 1,000Angstrom thickness is formed on the surface of the photoresist layer. The whole substrate is then exposed to oxygen plasma with 200W RF power for 10min to remove the layer 3c, and development is carried out.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17126480A JPS5794750A (en) | 1980-12-04 | 1980-12-04 | Formation of micropattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17126480A JPS5794750A (en) | 1980-12-04 | 1980-12-04 | Formation of micropattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5794750A true JPS5794750A (en) | 1982-06-12 |
Family
ID=15920097
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17126480A Pending JPS5794750A (en) | 1980-12-04 | 1980-12-04 | Formation of micropattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5794750A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61229103A (en) * | 1985-04-04 | 1986-10-13 | Canon Inc | Controller of copying machine or the like |
-
1980
- 1980-12-04 JP JP17126480A patent/JPS5794750A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61229103A (en) * | 1985-04-04 | 1986-10-13 | Canon Inc | Controller of copying machine or the like |
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