JPS5743425A - Forming method for fine pattern - Google Patents
Forming method for fine patternInfo
- Publication number
- JPS5743425A JPS5743425A JP11997680A JP11997680A JPS5743425A JP S5743425 A JPS5743425 A JP S5743425A JP 11997680 A JP11997680 A JP 11997680A JP 11997680 A JP11997680 A JP 11997680A JP S5743425 A JPS5743425 A JP S5743425A
- Authority
- JP
- Japan
- Prior art keywords
- metallic film
- resist
- thin
- layer
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Beam Exposure (AREA)
Abstract
PURPOSE:To obtain a fine pattern by forming a thin metallic film on a lower thin resist and an upper thick resist on the metallic film, etching the metallic film with the upper resist as a mask, and further etching the metallic film with the lower resist as a mask. CONSTITUTION:A thin metallic film 2 is formed on a glass substrate 1, a thin lower resist layer 6 is coated on the film, is patterned, and the processed part 4 is exposed. Then, a thin metallic film 7 is coated on the lower resist layer 6 including the exposed part, an upper resist layer 8 is coated thereon, and is patterned. With the upper resist layer 8 thus patterned as a mask the intermediate metallic film 7 is dry etched and removed, and the metallic film 2 is positively removed with high accuracy by dry etching with the layer 8, the film 7 and the layer 6 as masks.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11997680A JPS5743425A (en) | 1980-08-28 | 1980-08-28 | Forming method for fine pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11997680A JPS5743425A (en) | 1980-08-28 | 1980-08-28 | Forming method for fine pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5743425A true JPS5743425A (en) | 1982-03-11 |
Family
ID=14774838
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11997680A Pending JPS5743425A (en) | 1980-08-28 | 1980-08-28 | Forming method for fine pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5743425A (en) |
-
1980
- 1980-08-28 JP JP11997680A patent/JPS5743425A/en active Pending
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