JPS54145126A - Pattern formation material - Google Patents

Pattern formation material

Info

Publication number
JPS54145126A
JPS54145126A JP5267478A JP5267478A JPS54145126A JP S54145126 A JPS54145126 A JP S54145126A JP 5267478 A JP5267478 A JP 5267478A JP 5267478 A JP5267478 A JP 5267478A JP S54145126 A JPS54145126 A JP S54145126A
Authority
JP
Japan
Prior art keywords
methacrylate
substrate
copolymer
solvent
pattern formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5267478A
Other languages
Japanese (ja)
Other versions
JPS5530614B2 (en
Inventor
Masami Kakuchi
Shungo Sugawara
Yasuhiro Yoneda
Tateo Kitamura
Toshisuke Kitakoji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP5267478A priority Critical patent/JPS54145126A/en
Publication of JPS54145126A publication Critical patent/JPS54145126A/en
Publication of JPS5530614B2 publication Critical patent/JPS5530614B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

PURPOSE: To endow a positive type resist material for ionized radiation lithography with improved performances, almost free of any problems in practical uses, in sensitivity, resolution, and close adhesivity with a substrate, by using a specified copolymer for this material.
CONSTITUTION: A copolymer of fluoroalkyl methacrylate, such as 2,2,3,4,4,4- hexafluorobutyl methacrylate, and t-butyl methacrylate in a molor ratio of 1:1 or the like is dissolved in a solvent, such as cyclohexanone. This resist solutions is coated on a substrate, baked in a nitrogen gas stream, and then, irradiated with electron beams. Subsequently, this is developed with a developing solution, such as a solvent mixture of ethyl cellosolve and isopropyl alcohol.
COPYRIGHT: (C)1979,JPO&Japio
JP5267478A 1978-05-04 1978-05-04 Pattern formation material Granted JPS54145126A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5267478A JPS54145126A (en) 1978-05-04 1978-05-04 Pattern formation material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5267478A JPS54145126A (en) 1978-05-04 1978-05-04 Pattern formation material

Publications (2)

Publication Number Publication Date
JPS54145126A true JPS54145126A (en) 1979-11-13
JPS5530614B2 JPS5530614B2 (en) 1980-08-12

Family

ID=12921415

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5267478A Granted JPS54145126A (en) 1978-05-04 1978-05-04 Pattern formation material

Country Status (1)

Country Link
JP (1) JPS54145126A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02262152A (en) * 1989-03-31 1990-10-24 Terumo Corp Photoresist material
JP2001302726A (en) * 2000-02-16 2001-10-31 Shin Etsu Chem Co Ltd Polymeric compound, resist material and pattern-forming method
JP2007009175A (en) * 2005-06-02 2007-01-18 Hynix Semiconductor Inc Photoresist polymer, photoresist composition, method for manufacturing semiconductor device using the same and semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02262152A (en) * 1989-03-31 1990-10-24 Terumo Corp Photoresist material
JP2001302726A (en) * 2000-02-16 2001-10-31 Shin Etsu Chem Co Ltd Polymeric compound, resist material and pattern-forming method
JP2007009175A (en) * 2005-06-02 2007-01-18 Hynix Semiconductor Inc Photoresist polymer, photoresist composition, method for manufacturing semiconductor device using the same and semiconductor device

Also Published As

Publication number Publication date
JPS5530614B2 (en) 1980-08-12

Similar Documents

Publication Publication Date Title
GB1514109A (en) Method of making resist mask on a substrate
JPS5466829A (en) Pattern formation materil
JPS54145127A (en) Pattern formation material
JPS54145126A (en) Pattern formation material
JPS5568630A (en) Pattern formation
ATE126366T1 (en) GAS PHASE APPLIED PHOTORESISTANTS MADE OF ANIONIC POLYMERIZABLE MONOMERS.
JPS54145125A (en) Pattern formation material
JPS5515149A (en) Forming method of resist for microfabrication
JPS54116883A (en) Electron beam exposure method
JPS51148367A (en) Layer construction radiant ray resist
JPS52149978A (en) Developing treatment method of photoresist film
JPS57202535A (en) Formation of negative resist pattern
JPS5461478A (en) Chromium plate
JPS5277671A (en) Method and equipment of masking
JPS53112671A (en) Forming method for pattern
JPS52117077A (en) Electron beam-exposing method
JPS5211868A (en) Photoresist coating method
JPS52113163A (en) Method of developing electronic beam resist by means of gas plasma
JPS53114676A (en) Electron beam exposure method
JPS5272175A (en) Mask patterning of resist meterial
JPS558013A (en) Semiconductor device manufacturing method
JPS5382268A (en) Production of mask
JPS5354974A (en) Electron beam exposure system
JPS5732444A (en) Formation of resist pattern
JPS556341A (en) Developing method for electron beam resist