JPS52113163A - Method of developing electronic beam resist by means of gas plasma - Google Patents

Method of developing electronic beam resist by means of gas plasma

Info

Publication number
JPS52113163A
JPS52113163A JP2672876A JP2672876A JPS52113163A JP S52113163 A JPS52113163 A JP S52113163A JP 2672876 A JP2672876 A JP 2672876A JP 2672876 A JP2672876 A JP 2672876A JP S52113163 A JPS52113163 A JP S52113163A
Authority
JP
Japan
Prior art keywords
electronic beam
gas plasma
beam resist
developing electronic
developing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2672876A
Other languages
Japanese (ja)
Other versions
JPS588576B2 (en
Inventor
Tadao Kato
Hiroyasu Toyoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2672876A priority Critical patent/JPS588576B2/en
Publication of JPS52113163A publication Critical patent/JPS52113163A/en
Publication of JPS588576B2 publication Critical patent/JPS588576B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE: To develop an electronic beam resist exposed by an electronic beam by making use of a chemical reaction of alcoholic gas plasma.
COPYRIGHT: (C)1977,JPO&Japio
JP2672876A 1976-03-12 1976-03-12 Method for developing electron beam resist using gas plasma Expired JPS588576B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2672876A JPS588576B2 (en) 1976-03-12 1976-03-12 Method for developing electron beam resist using gas plasma

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2672876A JPS588576B2 (en) 1976-03-12 1976-03-12 Method for developing electron beam resist using gas plasma

Publications (2)

Publication Number Publication Date
JPS52113163A true JPS52113163A (en) 1977-09-22
JPS588576B2 JPS588576B2 (en) 1983-02-16

Family

ID=12201371

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2672876A Expired JPS588576B2 (en) 1976-03-12 1976-03-12 Method for developing electron beam resist using gas plasma

Country Status (1)

Country Link
JP (1) JPS588576B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5427369A (en) * 1977-08-01 1979-03-01 Hitachi Ltd Pattern formation method
US4388397A (en) * 1980-03-29 1983-06-14 Tokyo Ohka Kogyo Kabushiki Kaisha Photosensitive composition for dry development

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60165159U (en) * 1984-04-06 1985-11-01 株式会社 東洋空機製作所 Impact wrench tightening torque control device
JPS62203776A (en) * 1986-02-28 1987-09-08 トヨタ車体株式会社 Controller for service condition of impact wrench

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5427369A (en) * 1977-08-01 1979-03-01 Hitachi Ltd Pattern formation method
US4388397A (en) * 1980-03-29 1983-06-14 Tokyo Ohka Kogyo Kabushiki Kaisha Photosensitive composition for dry development

Also Published As

Publication number Publication date
JPS588576B2 (en) 1983-02-16

Similar Documents

Publication Publication Date Title
JPS5211175A (en) Activated gas reacting apparatus
JPS51117693A (en) Air fuel ratio detection element use temperature control apparatus
JPS5381899A (en) Manufacturing method of tritium
JPS52113163A (en) Method of developing electronic beam resist by means of gas plasma
JPS5339075A (en) Step and repeat exposure method of masks
JPS5326124A (en) Photographic image formation
JPS5373073A (en) Treatment method for photo resist
JPS525742A (en) Process for dechlorination of pcb
JPS52104066A (en) Selective etching method of thermosetting organic materials
JPS5287985A (en) Plasma etching method
JPS5230170A (en) Method of photoetching
JPS52173A (en) X-ray etching mask
JPS53114742A (en) Plasma ashing method
JPS53112671A (en) Forming method for pattern
JPS5241213A (en) Method of tablet coating free from air pollution
JPS5321573A (en) Etching method
JPS53105982A (en) Micropattern formation method
JPS525270A (en) Photo-mask
JPS51142276A (en) Method of exposing photo-resist
JPS5390766A (en) Exposure method
JPS52127167A (en) Etching method
JPS5269575A (en) Organic body residuum detection method
JPS5244571A (en) Method of forming fine pattern
JPS51147261A (en) Forming method of pattern
JPS5397374A (en) Mask producing method