JPS5766633A - Pattern formation of fine processing resist - Google Patents
Pattern formation of fine processing resistInfo
- Publication number
- JPS5766633A JPS5766633A JP55142020A JP14202080A JPS5766633A JP S5766633 A JPS5766633 A JP S5766633A JP 55142020 A JP55142020 A JP 55142020A JP 14202080 A JP14202080 A JP 14202080A JP S5766633 A JPS5766633 A JP S5766633A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electron beams
- resist
- ultraviolet rays
- far ultraviolet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
PURPOSE:To improve sensitivity and resolution against electron beam by a method wherein a pattern is drawn by electron beams on a film on the substrate of a resist component becoming negative type by electron beams and positive type by far ultraviolet rays as well and development is performed under exposure of far ultraviolet rays at the substrate. CONSTITUTION:A film is formed on a substrate by using a resist compound, becoming negative type and positive type by irradiating electron beams and far ultraviolet rays respective at the substrate, for example, the copolymer of ester methacrylate having polyglycidyl methacrylate or glycidyl methacrylate and the residue of C1-C4. Next, a pattern is drawn on the substance by using electron beams and far ultravoilet rays are collectively irradiated at the substrate. After that, development is performed by acetone methanol solution. In this way, the rising part of a resist shirt section forms remarkably sharp and the dimension accuracy of line and space become excellent.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55142020A JPS5766633A (en) | 1980-10-13 | 1980-10-13 | Pattern formation of fine processing resist |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55142020A JPS5766633A (en) | 1980-10-13 | 1980-10-13 | Pattern formation of fine processing resist |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5766633A true JPS5766633A (en) | 1982-04-22 |
JPS6160574B2 JPS6160574B2 (en) | 1986-12-22 |
Family
ID=15305495
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55142020A Granted JPS5766633A (en) | 1980-10-13 | 1980-10-13 | Pattern formation of fine processing resist |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5766633A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6143473A (en) * | 1998-05-20 | 2000-11-07 | Fujitsu Limited | Film patterning method utilizing post-development residue remover |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51140345A (en) * | 1975-05-29 | 1976-12-03 | Toku Tamaoki | Method of feeding water to flushing water tank for stall urinal |
JPS5676530A (en) * | 1979-11-27 | 1981-06-24 | Fujitsu Ltd | Exposure of resist |
JPS56164531A (en) * | 1980-05-21 | 1981-12-17 | Hitachi Ltd | Manufacture of semiconductor |
JPS5912522A (en) * | 1982-04-05 | 1984-01-23 | ワイ・エス・セキユリテイ−ズ・リミテツド | Electric switchgear |
-
1980
- 1980-10-13 JP JP55142020A patent/JPS5766633A/en active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51140345A (en) * | 1975-05-29 | 1976-12-03 | Toku Tamaoki | Method of feeding water to flushing water tank for stall urinal |
JPS5676530A (en) * | 1979-11-27 | 1981-06-24 | Fujitsu Ltd | Exposure of resist |
JPS56164531A (en) * | 1980-05-21 | 1981-12-17 | Hitachi Ltd | Manufacture of semiconductor |
JPS5912522A (en) * | 1982-04-05 | 1984-01-23 | ワイ・エス・セキユリテイ−ズ・リミテツド | Electric switchgear |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6143473A (en) * | 1998-05-20 | 2000-11-07 | Fujitsu Limited | Film patterning method utilizing post-development residue remover |
Also Published As
Publication number | Publication date |
---|---|
JPS6160574B2 (en) | 1986-12-22 |
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