JPS55130541A - Manufacture of photomask - Google Patents

Manufacture of photomask

Info

Publication number
JPS55130541A
JPS55130541A JP3821779A JP3821779A JPS55130541A JP S55130541 A JPS55130541 A JP S55130541A JP 3821779 A JP3821779 A JP 3821779A JP 3821779 A JP3821779 A JP 3821779A JP S55130541 A JPS55130541 A JP S55130541A
Authority
JP
Japan
Prior art keywords
pattern
film
mask
photomask
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3821779A
Other languages
Japanese (ja)
Inventor
Kenji Murakami
Kuniya Shimazaki
Michiro Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3821779A priority Critical patent/JPS55130541A/en
Publication of JPS55130541A publication Critical patent/JPS55130541A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/56—Organic absorbers, e.g. of photo-resists

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To manufacture a photomask of high accuracy with high productivity while omitting a process of etching a mask material such as a chromium film by forming a resist pattern from a resist film laid on a glass substrate and changing the pattern in quality by plasma discharge. CONSTITUTION:A negative type photoresist is coated onto substrate 11 to form resist film 12. Film 12 is irradiated with ultraviolet rays through mask 13 to transfer the pattern of mask 13 onto film 12, which is then developed selectively dissolution- remove the unirradiated portion. Resist pattern 14 thus formed is heat treated in air at about 155 deg.C and exposed to plasma discharge, e.g., using chlorine type gas to change pattern 14 in quality. Thus, pattern 14 is converted into mask pattern 15 to obtain photomask 16.
JP3821779A 1979-03-30 1979-03-30 Manufacture of photomask Pending JPS55130541A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3821779A JPS55130541A (en) 1979-03-30 1979-03-30 Manufacture of photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3821779A JPS55130541A (en) 1979-03-30 1979-03-30 Manufacture of photomask

Publications (1)

Publication Number Publication Date
JPS55130541A true JPS55130541A (en) 1980-10-09

Family

ID=12519135

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3821779A Pending JPS55130541A (en) 1979-03-30 1979-03-30 Manufacture of photomask

Country Status (1)

Country Link
JP (1) JPS55130541A (en)

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