JPS57192027A - Forming method of photosensitive resin window - Google Patents
Forming method of photosensitive resin windowInfo
- Publication number
- JPS57192027A JPS57192027A JP7720081A JP7720081A JPS57192027A JP S57192027 A JPS57192027 A JP S57192027A JP 7720081 A JP7720081 A JP 7720081A JP 7720081 A JP7720081 A JP 7720081A JP S57192027 A JPS57192027 A JP S57192027A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- films
- photosensitive resin
- forming method
- resin window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To make the opening of the first layer larger than that of the second layer after developing treatment in the first layer and the second layer by substantially changing the photosensitive regions of the first layer and the second layer to the photosensitive resin of two layers or more. CONSTITUTION:Multilayer films 5, 6 consisting of the photosensitive resin films of at least two layers are formed onto a substrate 4, and the condition of etching of the films 5, 6 are made differ. Accordingly, the opening section of the film 5 contacting with the substrate 4 is shaped so as to be contained in the opening section of the film 6. The conditions of etching are made differ in response to the sensitivity of the films 5, 6, the difference of irradiated beams to the films 5, 6, etc.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7720081A JPS57192027A (en) | 1981-05-20 | 1981-05-20 | Forming method of photosensitive resin window |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7720081A JPS57192027A (en) | 1981-05-20 | 1981-05-20 | Forming method of photosensitive resin window |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57192027A true JPS57192027A (en) | 1982-11-26 |
Family
ID=13627175
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7720081A Pending JPS57192027A (en) | 1981-05-20 | 1981-05-20 | Forming method of photosensitive resin window |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57192027A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02156539A (en) * | 1988-12-08 | 1990-06-15 | Hitachi Ltd | Manufacture of semiconductor integrated circuit device |
US6328409B1 (en) | 1998-09-30 | 2001-12-11 | Xerox Corporation | Ballistic aerosol making apparatus for marking with a liquid material |
US6340216B1 (en) | 1998-09-30 | 2002-01-22 | Xerox Corporation | Ballistic aerosol marking apparatus for treating a substrate |
US6416158B1 (en) * | 1998-09-30 | 2002-07-09 | Xerox Corporation | Ballistic aerosol marking apparatus with stacked electrode structure |
US6751865B1 (en) * | 1998-09-30 | 2004-06-22 | Xerox Corporation | Method of making a print head for use in a ballistic aerosol marking apparatus |
CN102231045A (en) * | 2011-06-28 | 2011-11-02 | 上海宏力半导体制造有限公司 | Photoetching method and semiconductor device |
JP2015215585A (en) * | 2014-05-07 | 2015-12-03 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | Photosensitive insulator film for via hole formation, and via hole formation method using the same |
-
1981
- 1981-05-20 JP JP7720081A patent/JPS57192027A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02156539A (en) * | 1988-12-08 | 1990-06-15 | Hitachi Ltd | Manufacture of semiconductor integrated circuit device |
US6328409B1 (en) | 1998-09-30 | 2001-12-11 | Xerox Corporation | Ballistic aerosol making apparatus for marking with a liquid material |
US6340216B1 (en) | 1998-09-30 | 2002-01-22 | Xerox Corporation | Ballistic aerosol marking apparatus for treating a substrate |
US6416158B1 (en) * | 1998-09-30 | 2002-07-09 | Xerox Corporation | Ballistic aerosol marking apparatus with stacked electrode structure |
US6751865B1 (en) * | 1998-09-30 | 2004-06-22 | Xerox Corporation | Method of making a print head for use in a ballistic aerosol marking apparatus |
CN102231045A (en) * | 2011-06-28 | 2011-11-02 | 上海宏力半导体制造有限公司 | Photoetching method and semiconductor device |
JP2015215585A (en) * | 2014-05-07 | 2015-12-03 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | Photosensitive insulator film for via hole formation, and via hole formation method using the same |
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