JPS5785234A - Pattern formation - Google Patents
Pattern formationInfo
- Publication number
- JPS5785234A JPS5785234A JP16229880A JP16229880A JPS5785234A JP S5785234 A JPS5785234 A JP S5785234A JP 16229880 A JP16229880 A JP 16229880A JP 16229880 A JP16229880 A JP 16229880A JP S5785234 A JPS5785234 A JP S5785234A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- resist
- negative
- radiation sensitive
- type radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electron Beam Exposure (AREA)
Abstract
PURPOSE:To improve resolving power by a method wherein two kinds of negative-type radiation sensitive resists having different solubility are used to form double structure by using the resist with low solubility as the lower layer. CONSTITUTION:The thin film 2 of the first negative-type radiation sensitive resist with a film thickness of about 1,000-3,000Angstrom is formed on a substrate 1. Next, the thin film 3 of the second negative-type radiation sensitive resist with a film thickness of about 2,000-6,000Angstrom is formed on the thin film 2. At that time, as the first and the second reists, if the conditions that the resist having different solubility, equal sensitivity and low solubility to the same solvent is used as the lower layer are satisfied, any resist is acceptable. Next, radiations 4 are aimed at the thin film 3 and development processing is applied to the thin film 3 and then a convex pattern is formed with the first and the second thin films.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16229880A JPS5785234A (en) | 1980-11-18 | 1980-11-18 | Pattern formation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16229880A JPS5785234A (en) | 1980-11-18 | 1980-11-18 | Pattern formation |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5785234A true JPS5785234A (en) | 1982-05-27 |
Family
ID=15751831
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16229880A Pending JPS5785234A (en) | 1980-11-18 | 1980-11-18 | Pattern formation |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5785234A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05152199A (en) * | 1991-11-27 | 1993-06-18 | Nec Kansai Ltd | Method for forming resist pattern |
-
1980
- 1980-11-18 JP JP16229880A patent/JPS5785234A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05152199A (en) * | 1991-11-27 | 1993-06-18 | Nec Kansai Ltd | Method for forming resist pattern |
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