JPS5768834A - Photographic etching method - Google Patents
Photographic etching methodInfo
- Publication number
- JPS5768834A JPS5768834A JP14616880A JP14616880A JPS5768834A JP S5768834 A JPS5768834 A JP S5768834A JP 14616880 A JP14616880 A JP 14616880A JP 14616880 A JP14616880 A JP 14616880A JP S5768834 A JPS5768834 A JP S5768834A
- Authority
- JP
- Japan
- Prior art keywords
- film
- photosensitive resin
- etching method
- coating
- hexamethyldisilazane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
Abstract
PURPOSE:To prevent deterioration of resist sensitivity, uniting of patterns, and uneven coating in photographic etching, by coating a liquid mixture of hexamethyldisilazane and a nonpolar organic solvent on a film, forming a photosensitive resin on this mixture, and subjecting this layer to exposure processing. CONSTITUTION:In this photgraphic etching method in which a photosensitive resin is coated on the film to be etched, and this resin is subjected to exposure processing, before coating the photosensitive resin on said film, a liquid mixture of hexamethyldisilazane and a nonpolar organic solvent, preferably, ethyl cellosolve acetate is coated on said film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14616880A JPS5768834A (en) | 1980-10-17 | 1980-10-17 | Photographic etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14616880A JPS5768834A (en) | 1980-10-17 | 1980-10-17 | Photographic etching method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5768834A true JPS5768834A (en) | 1982-04-27 |
Family
ID=15401663
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14616880A Pending JPS5768834A (en) | 1980-10-17 | 1980-10-17 | Photographic etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5768834A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5723259A (en) * | 1992-01-07 | 1998-03-03 | Fujitsu Limited | Negative type composition for chemically amplified resist and process and apparatus of formation of chemically amplified resist pattern |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4953629A (en) * | 1972-07-31 | 1974-05-24 | ||
JPS5040126A (en) * | 1973-08-15 | 1975-04-12 | ||
JPS5649526A (en) * | 1979-09-29 | 1981-05-06 | Toshiba Corp | Manufacture of semiconductor device |
-
1980
- 1980-10-17 JP JP14616880A patent/JPS5768834A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4953629A (en) * | 1972-07-31 | 1974-05-24 | ||
JPS5040126A (en) * | 1973-08-15 | 1975-04-12 | ||
JPS5649526A (en) * | 1979-09-29 | 1981-05-06 | Toshiba Corp | Manufacture of semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5723259A (en) * | 1992-01-07 | 1998-03-03 | Fujitsu Limited | Negative type composition for chemically amplified resist and process and apparatus of formation of chemically amplified resist pattern |
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