JPS5649526A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5649526A JPS5649526A JP12544179A JP12544179A JPS5649526A JP S5649526 A JPS5649526 A JP S5649526A JP 12544179 A JP12544179 A JP 12544179A JP 12544179 A JP12544179 A JP 12544179A JP S5649526 A JPS5649526 A JP S5649526A
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor substrate
- soaked
- dissolved
- organic solvent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 abstract 3
- 239000000243 solution Substances 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000003960 organic solvent Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 abstract 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract 1
- 230000002745 absorbent Effects 0.000 abstract 1
- 239000002250 absorbent Substances 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910001385 heavy metal Inorganic materials 0.000 abstract 1
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000011259 mixed solution Substances 0.000 abstract 1
- 229910000077 silane Inorganic materials 0.000 abstract 1
- -1 silane compound Chemical class 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- 235000011149 sulphuric acid Nutrition 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
PURPOSE:To freely control a degree of hydrophile property with a excellent reproducibility by a method wherein a semiconductor substrate is soaked in a treatment solution of an organic solvent in which organic silane compound is dissolved at a fixed rate and an absorbent reaction of the compound is generated when a hydrophilic treatment is performed on the surface of an SiO2 film of the semiconductor substrate. CONSTITUTION:An SiO2 film 2 is coated on a semiconductor substrate 1, it is boiled using a mixed solution such as H2SO4 and H2O2 or the like and the impurities such as heavy metal molecules, Na molecules, etc., adhered on the surface of the film 2 are removed. But, when the above process is performed, the hydrophile property on the surface of the film 2 becomes too large, thereby generating troubles when a pattern is formed on said film. Therefore, the substrate 1 is soaked in a treatment solution consisting of one organic solvent among butyle acetate, trichlene and methanol with a fixed amount of dissolved hexamethylene disilazane, and a desired value is obtained for a surface contact angle of the solution against the film. After that, an opening 4 having the desired taper angle delta can be obtained in accordance with the selected kind of solvent by performing an etching on the film 2 using a resist film 3 as a mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12544179A JPS5649526A (en) | 1979-09-29 | 1979-09-29 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12544179A JPS5649526A (en) | 1979-09-29 | 1979-09-29 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5649526A true JPS5649526A (en) | 1981-05-06 |
| JPS6327850B2 JPS6327850B2 (en) | 1988-06-06 |
Family
ID=14910158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12544179A Granted JPS5649526A (en) | 1979-09-29 | 1979-09-29 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5649526A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5768834A (en) * | 1980-10-17 | 1982-04-27 | Matsushita Electric Ind Co Ltd | Photographic etching method |
| JPS5844715A (en) * | 1981-09-11 | 1983-03-15 | Fujitsu Ltd | Forming method for minute pattern |
| JPS59136935A (en) * | 1983-01-27 | 1984-08-06 | Nec Corp | Manufacture of semiconductor device |
| KR20020006735A (en) * | 2000-07-13 | 2002-01-26 | 이형도 | Surface treating material and surface treating method of micro-device |
| US20100075262A1 (en) * | 2008-09-22 | 2010-03-25 | Robert Koefer | Post arrays and methods of making the same |
| US9244358B2 (en) | 2008-10-21 | 2016-01-26 | Tokyo Ohka Kogyo Co., Ltd. | Surface treatment liquid, surface treatment method, hydrophobilization method, and hydrophobilized substrate |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5434769A (en) * | 1977-08-24 | 1979-03-14 | Fuji Electric Co Ltd | Photoetching method for silicon semiconductor wafer |
-
1979
- 1979-09-29 JP JP12544179A patent/JPS5649526A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5434769A (en) * | 1977-08-24 | 1979-03-14 | Fuji Electric Co Ltd | Photoetching method for silicon semiconductor wafer |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5768834A (en) * | 1980-10-17 | 1982-04-27 | Matsushita Electric Ind Co Ltd | Photographic etching method |
| JPS5844715A (en) * | 1981-09-11 | 1983-03-15 | Fujitsu Ltd | Forming method for minute pattern |
| JPH0143450B2 (en) * | 1981-09-11 | 1989-09-20 | Fujitsu Ltd | |
| JPS59136935A (en) * | 1983-01-27 | 1984-08-06 | Nec Corp | Manufacture of semiconductor device |
| JPH0148652B2 (en) * | 1983-01-27 | 1989-10-20 | Nippon Electric Co | |
| KR20020006735A (en) * | 2000-07-13 | 2002-01-26 | 이형도 | Surface treating material and surface treating method of micro-device |
| US20100075262A1 (en) * | 2008-09-22 | 2010-03-25 | Robert Koefer | Post arrays and methods of making the same |
| US8617799B2 (en) * | 2008-09-22 | 2013-12-31 | Api Technologies Corp. | Post arrays and methods of making the same |
| US9244358B2 (en) | 2008-10-21 | 2016-01-26 | Tokyo Ohka Kogyo Co., Ltd. | Surface treatment liquid, surface treatment method, hydrophobilization method, and hydrophobilized substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6327850B2 (en) | 1988-06-06 |
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