JPS5534418A - Method of selectively etching semiconductor - Google Patents
Method of selectively etching semiconductorInfo
- Publication number
- JPS5534418A JPS5534418A JP10623278A JP10623278A JPS5534418A JP S5534418 A JPS5534418 A JP S5534418A JP 10623278 A JP10623278 A JP 10623278A JP 10623278 A JP10623278 A JP 10623278A JP S5534418 A JPS5534418 A JP S5534418A
- Authority
- JP
- Japan
- Prior art keywords
- region
- irradiated
- etching
- substrate
- selectively etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To increase the etching rate in a region to be selectively etched by the irradiation of electron beams, and effecting the etchlng simultaneously with the etching of other region where no electron beam is irradiated thereby to make it possible to carry out the selective etching witout requiring any mask.
CONSTITUTION: For example, 1MeV of electron beams 3 are irradiated onto a desired region 2 of the surface 1a of a semiconductor substrate 1 to cause a numberless holes in the vicinity of the surface of an irradiated region 2, and thereafter the substrate 1 is immersed in an etching solution thereby to etch the surface 1a. As a result, since the etching rate of the irradiated region 2 becomes greater than that of the other region, a hole 4 is formed, and an effect similar to that obtained when the surface of the substrate 1 is selectively etched can be obtained.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10623278A JPS5534418A (en) | 1978-09-01 | 1978-09-01 | Method of selectively etching semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10623278A JPS5534418A (en) | 1978-09-01 | 1978-09-01 | Method of selectively etching semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5534418A true JPS5534418A (en) | 1980-03-11 |
Family
ID=14428369
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10623278A Pending JPS5534418A (en) | 1978-09-01 | 1978-09-01 | Method of selectively etching semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5534418A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58212137A (en) * | 1982-06-03 | 1983-12-09 | Mitsubishi Electric Corp | Manufacture of semiconductor element |
WO2000065642A1 (en) * | 1999-04-26 | 2000-11-02 | Shin-Etsu Handotai Co., Ltd. | Production methods of compound semiconductor single crystal and compound semiconductor element |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5037370A (en) * | 1973-08-06 | 1975-04-08 | ||
JPS50103795A (en) * | 1974-01-22 | 1975-08-16 |
-
1978
- 1978-09-01 JP JP10623278A patent/JPS5534418A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5037370A (en) * | 1973-08-06 | 1975-04-08 | ||
JPS50103795A (en) * | 1974-01-22 | 1975-08-16 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58212137A (en) * | 1982-06-03 | 1983-12-09 | Mitsubishi Electric Corp | Manufacture of semiconductor element |
WO2000065642A1 (en) * | 1999-04-26 | 2000-11-02 | Shin-Etsu Handotai Co., Ltd. | Production methods of compound semiconductor single crystal and compound semiconductor element |
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