JPS5534418A - Method of selectively etching semiconductor - Google Patents

Method of selectively etching semiconductor

Info

Publication number
JPS5534418A
JPS5534418A JP10623278A JP10623278A JPS5534418A JP S5534418 A JPS5534418 A JP S5534418A JP 10623278 A JP10623278 A JP 10623278A JP 10623278 A JP10623278 A JP 10623278A JP S5534418 A JPS5534418 A JP S5534418A
Authority
JP
Japan
Prior art keywords
region
irradiated
etching
substrate
selectively etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10623278A
Other languages
Japanese (ja)
Inventor
Takao Wada
Sashiro Kamimura
Kentaro Kiyozumi
Tokuhide Shimojo
Kazuhiko Kasano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Noritake Itron Corp
Original Assignee
Ise Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ise Electronics Corp filed Critical Ise Electronics Corp
Priority to JP10623278A priority Critical patent/JPS5534418A/en
Publication of JPS5534418A publication Critical patent/JPS5534418A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To increase the etching rate in a region to be selectively etched by the irradiation of electron beams, and effecting the etchlng simultaneously with the etching of other region where no electron beam is irradiated thereby to make it possible to carry out the selective etching witout requiring any mask.
CONSTITUTION: For example, 1MeV of electron beams 3 are irradiated onto a desired region 2 of the surface 1a of a semiconductor substrate 1 to cause a numberless holes in the vicinity of the surface of an irradiated region 2, and thereafter the substrate 1 is immersed in an etching solution thereby to etch the surface 1a. As a result, since the etching rate of the irradiated region 2 becomes greater than that of the other region, a hole 4 is formed, and an effect similar to that obtained when the surface of the substrate 1 is selectively etched can be obtained.
COPYRIGHT: (C)1980,JPO&Japio
JP10623278A 1978-09-01 1978-09-01 Method of selectively etching semiconductor Pending JPS5534418A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10623278A JPS5534418A (en) 1978-09-01 1978-09-01 Method of selectively etching semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10623278A JPS5534418A (en) 1978-09-01 1978-09-01 Method of selectively etching semiconductor

Publications (1)

Publication Number Publication Date
JPS5534418A true JPS5534418A (en) 1980-03-11

Family

ID=14428369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10623278A Pending JPS5534418A (en) 1978-09-01 1978-09-01 Method of selectively etching semiconductor

Country Status (1)

Country Link
JP (1) JPS5534418A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58212137A (en) * 1982-06-03 1983-12-09 Mitsubishi Electric Corp Manufacture of semiconductor element
WO2000065642A1 (en) * 1999-04-26 2000-11-02 Shin-Etsu Handotai Co., Ltd. Production methods of compound semiconductor single crystal and compound semiconductor element

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5037370A (en) * 1973-08-06 1975-04-08
JPS50103795A (en) * 1974-01-22 1975-08-16

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5037370A (en) * 1973-08-06 1975-04-08
JPS50103795A (en) * 1974-01-22 1975-08-16

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58212137A (en) * 1982-06-03 1983-12-09 Mitsubishi Electric Corp Manufacture of semiconductor element
WO2000065642A1 (en) * 1999-04-26 2000-11-02 Shin-Etsu Handotai Co., Ltd. Production methods of compound semiconductor single crystal and compound semiconductor element

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