JPS6442822A - Processing of semiconductor substrate - Google Patents

Processing of semiconductor substrate

Info

Publication number
JPS6442822A
JPS6442822A JP20019787A JP20019787A JPS6442822A JP S6442822 A JPS6442822 A JP S6442822A JP 20019787 A JP20019787 A JP 20019787A JP 20019787 A JP20019787 A JP 20019787A JP S6442822 A JPS6442822 A JP S6442822A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
upper layer
layer film
reactivity
whose reactivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20019787A
Other languages
Japanese (ja)
Other versions
JPH0618187B2 (en
Inventor
Nobukazu Takado
Kiyoshi Asakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP20019787A priority Critical patent/JPH0618187B2/en
Publication of JPS6442822A publication Critical patent/JPS6442822A/en
Publication of JPH0618187B2 publication Critical patent/JPH0618187B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components

Abstract

PURPOSE:To easily obtain a perpendicular and deep groove in a semiconductor substrate by supplying a gas or a radical whose reactivity with an upper layer film thereof is sufficiently low and whose reactivity with the semiconductor substrate itself is high when etching the semiconductor substrate which is exposed to an opening by means of a focused ion beam. CONSTITUTION:After forming an opening 3 in an upper layer film 2 formed onto a semiconductor substrate 1, a focused ion beam is emanated thereupon while supplying a gas or a radical whose reactivity with the upper layer film 2 is low and whose reactivity with the semiconductor substrate 1 is high. The low reactivity causes the upper layer film 2 to be unetched and become a masking layer, while it causes the semiconductor substrate 1 to be etched actively. According to the constitution, a deeply etched groove can easily be formed without loosing the perpendicularity of the lateral wall.
JP20019787A 1987-08-10 1987-08-10 Semiconductor substrate processing method Expired - Lifetime JPH0618187B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20019787A JPH0618187B2 (en) 1987-08-10 1987-08-10 Semiconductor substrate processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20019787A JPH0618187B2 (en) 1987-08-10 1987-08-10 Semiconductor substrate processing method

Publications (2)

Publication Number Publication Date
JPS6442822A true JPS6442822A (en) 1989-02-15
JPH0618187B2 JPH0618187B2 (en) 1994-03-09

Family

ID=16420415

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20019787A Expired - Lifetime JPH0618187B2 (en) 1987-08-10 1987-08-10 Semiconductor substrate processing method

Country Status (1)

Country Link
JP (1) JPH0618187B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04239725A (en) * 1991-01-23 1992-08-27 Hikari Gijutsu Kenkyu Kaihatsu Kk Structure forming method for compound semiconductor
US5683547A (en) * 1990-11-21 1997-11-04 Hitachi, Ltd. Processing method and apparatus using focused energy beam
KR100230383B1 (en) * 1996-11-18 1999-11-15 윤종용 Method of forming align key in semiconductor device
US20100267234A1 (en) * 2007-04-30 2010-10-21 Technion - Research & Development Foundation Ltd. Focused ion beam deep nano-patterning apparatus and method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5683547A (en) * 1990-11-21 1997-11-04 Hitachi, Ltd. Processing method and apparatus using focused energy beam
JPH04239725A (en) * 1991-01-23 1992-08-27 Hikari Gijutsu Kenkyu Kaihatsu Kk Structure forming method for compound semiconductor
KR100230383B1 (en) * 1996-11-18 1999-11-15 윤종용 Method of forming align key in semiconductor device
US20100267234A1 (en) * 2007-04-30 2010-10-21 Technion - Research & Development Foundation Ltd. Focused ion beam deep nano-patterning apparatus and method
US8557707B2 (en) * 2007-04-30 2013-10-15 Technion Research And Development Foundation Ltd. Focused ion beam deep nano-patterning apparatus and method

Also Published As

Publication number Publication date
JPH0618187B2 (en) 1994-03-09

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