JPS5655049A - Etching process - Google Patents

Etching process

Info

Publication number
JPS5655049A
JPS5655049A JP13103679A JP13103679A JPS5655049A JP S5655049 A JPS5655049 A JP S5655049A JP 13103679 A JP13103679 A JP 13103679A JP 13103679 A JP13103679 A JP 13103679A JP S5655049 A JPS5655049 A JP S5655049A
Authority
JP
Japan
Prior art keywords
mask
oxide film
resist film
ions
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13103679A
Other languages
Japanese (ja)
Inventor
Masanao Itoga
Shuji Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13103679A priority Critical patent/JPS5655049A/en
Publication of JPS5655049A publication Critical patent/JPS5655049A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To readily control the configuration of the side surface at the peripheral edge of a resist film by implanting B or P ions with a resist mask patterned with a silicon oxide film as a mask and etching an oxide film with an HF gas. CONSTITUTION:In a dry oxalate process, a silicon oxide film 2 is formed on a semiconductor substrate 1, with a patterned resist film 3 as a mask B or P ions are implanted (uniformly implanted in case of that indicated in a fiture), and is filled in a reduced pressure HF gas. Then, the lower surface of the resist film 3 is etched and removed. When ion implantation condition is thus controlld, an opening having a vertical side surface or tapered or inverted tapered hole can be freely opened as shown.
JP13103679A 1979-10-11 1979-10-11 Etching process Pending JPS5655049A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13103679A JPS5655049A (en) 1979-10-11 1979-10-11 Etching process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13103679A JPS5655049A (en) 1979-10-11 1979-10-11 Etching process

Publications (1)

Publication Number Publication Date
JPS5655049A true JPS5655049A (en) 1981-05-15

Family

ID=15048516

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13103679A Pending JPS5655049A (en) 1979-10-11 1979-10-11 Etching process

Country Status (1)

Country Link
JP (1) JPS5655049A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59218868A (en) * 1983-05-27 1984-12-10 Tokyo Tungsten Co Ltd Terminal for dot printer
JPH0799195A (en) * 1993-09-27 1995-04-11 Nec Corp Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59218868A (en) * 1983-05-27 1984-12-10 Tokyo Tungsten Co Ltd Terminal for dot printer
JPH0799195A (en) * 1993-09-27 1995-04-11 Nec Corp Manufacture of semiconductor device

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