JPS649620A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS649620A JPS649620A JP16567087A JP16567087A JPS649620A JP S649620 A JPS649620 A JP S649620A JP 16567087 A JP16567087 A JP 16567087A JP 16567087 A JP16567087 A JP 16567087A JP S649620 A JPS649620 A JP S649620A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- insulating film
- opening
- gas
- dry etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To make it possible to form a gate metal without yielding a cavity in an opening part even in the opening having a submicron size, by performing etching up to an intermediate part of an insulating film by using a first mask, providing a second mask on the side surface of the insulating film, and providing the opening in the insulating film with the first and second masks as the masks. CONSTITUTION:An insulating film (SiO2 film) 12 is formed on the entire surface of a semiconductor substrate 1. A first mask material (W) is formed on the film 2. An opening is provided by dry etching using SF6 gas. Thus a first mask 3 is formed. with the first mask 3 as a mask, the insulating film 2 is etched by dry etching using CF4 gas, and a second mask material (resist) is formed. A second mask 4 is made to remain only on the side surface of the opening part in the insulating film 2 by dry etching using O2 gas. Then, with the first and second masks 3 and 4 as the masks, the insulating film 2 is etched to the semiconductor substrate 1 by dry etching using CF4 gas. Then, the second mask is removed with an organic solvent, and the first mask is removed by dry etching using SF6 gas. Thus, an opening, whose opening part is expanded, is provided in the insulating film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16567087A JPS649620A (en) | 1987-07-01 | 1987-07-01 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16567087A JPS649620A (en) | 1987-07-01 | 1987-07-01 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS649620A true JPS649620A (en) | 1989-01-12 |
Family
ID=15816793
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16567087A Pending JPS649620A (en) | 1987-07-01 | 1987-07-01 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS649620A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5158616A (en) * | 1988-07-22 | 1992-10-27 | Tokyo Electron Limited | Apparatus for cleaning a substrate |
| KR100478495B1 (en) * | 2002-12-05 | 2005-03-29 | 동부아남반도체 주식회사 | Semiconductor device and fabricating method thereof |
| CN103247526A (en) * | 2013-05-08 | 2013-08-14 | 中国电子科技集团公司第五十五研究所 | Method for gate dielectric etching suitable for submicro gate length semiconductor device production |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6022340A (en) * | 1983-07-18 | 1985-02-04 | Toshiba Corp | Semiconductor device and manufacture of the same |
-
1987
- 1987-07-01 JP JP16567087A patent/JPS649620A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6022340A (en) * | 1983-07-18 | 1985-02-04 | Toshiba Corp | Semiconductor device and manufacture of the same |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5158616A (en) * | 1988-07-22 | 1992-10-27 | Tokyo Electron Limited | Apparatus for cleaning a substrate |
| KR100478495B1 (en) * | 2002-12-05 | 2005-03-29 | 동부아남반도체 주식회사 | Semiconductor device and fabricating method thereof |
| CN103247526A (en) * | 2013-05-08 | 2013-08-14 | 中国电子科技集团公司第五十五研究所 | Method for gate dielectric etching suitable for submicro gate length semiconductor device production |
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