JPS5766631A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5766631A
JPS5766631A JP14342280A JP14342280A JPS5766631A JP S5766631 A JPS5766631 A JP S5766631A JP 14342280 A JP14342280 A JP 14342280A JP 14342280 A JP14342280 A JP 14342280A JP S5766631 A JPS5766631 A JP S5766631A
Authority
JP
Japan
Prior art keywords
film
windows
insulating
exposed
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14342280A
Other languages
Japanese (ja)
Inventor
Masamitsu Yamauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Home Electronics Ltd
NEC Corp
Original Assignee
NEC Home Electronics Ltd
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Home Electronics Ltd, Nippon Electric Co Ltd filed Critical NEC Home Electronics Ltd
Priority to JP14342280A priority Critical patent/JPS5766631A/en
Publication of JPS5766631A publication Critical patent/JPS5766631A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To completely eliminate the superposition of the first and the second insulating films even if pin holes exist in the first and the second insulating films respectively by performing window opening of the first insulating film and that of the second insulating film by separate processings respectively. CONSTITUTION:The first photoresist film 17 is formed on the first insulating film 2 to form windows 18, 19 and next, the removal of the film 2 is selectively done by etching the film 2 from the windows 18, 19 and the film 17 is removed with stepped sections m, n with electrodes being exposed. After that, the second insulating film 8 is formed on the whole surface of a wafer 1 and windows 23, 24 are formed at the main points equivalent to the stepped sections m, n by forming the second photoresist film 22 on the film 8. Next, the film 8 exposed from the windows 23, 24 is etched to selectively remove the film 8. After that, the film 22 is removed and windows 25, 26 connected to the film 2 and the film 8 are formed.
JP14342280A 1980-10-13 1980-10-13 Manufacture of semiconductor device Pending JPS5766631A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14342280A JPS5766631A (en) 1980-10-13 1980-10-13 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14342280A JPS5766631A (en) 1980-10-13 1980-10-13 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5766631A true JPS5766631A (en) 1982-04-22

Family

ID=15338368

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14342280A Pending JPS5766631A (en) 1980-10-13 1980-10-13 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5766631A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS515568A (en) * 1974-07-05 1976-01-17 Oki Electric Ind Co Ltd Tasohaisenkairono seizohoho

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS515568A (en) * 1974-07-05 1976-01-17 Oki Electric Ind Co Ltd Tasohaisenkairono seizohoho

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