JPS6437836A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6437836A
JPS6437836A JP19496187A JP19496187A JPS6437836A JP S6437836 A JPS6437836 A JP S6437836A JP 19496187 A JP19496187 A JP 19496187A JP 19496187 A JP19496187 A JP 19496187A JP S6437836 A JPS6437836 A JP S6437836A
Authority
JP
Japan
Prior art keywords
film
photo
resist
ion implantation
brought
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19496187A
Other languages
Japanese (ja)
Inventor
Junji Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP19496187A priority Critical patent/JPS6437836A/en
Publication of JPS6437836A publication Critical patent/JPS6437836A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To make sure the execution of ion implantation work by previously forming a photo-resist film having an area smaller than a metallic film patterned and not brought into contact with an edge onto the metallic film. CONSTITUTION:An SiO2 film 12 is shaped onto a semiconductor substrate 11, an Al film 13 is formed and patterned through a photolithographic technique, and a photo-resist pattern 14 is shaped onto the Al film by using the photolithographic technique again. When ions are implanted under the state, the photo- resist 14 on the Al film 13 is changed into a discolored photo-resist 15. Consequently, ion implantation work can be made sure at that time. Since the photo- resist 14 is not brought into contact with the edge of the Al film 13, storage charges by ion implantation generate no defect of Al.
JP19496187A 1987-08-03 1987-08-03 Manufacture of semiconductor device Pending JPS6437836A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19496187A JPS6437836A (en) 1987-08-03 1987-08-03 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19496187A JPS6437836A (en) 1987-08-03 1987-08-03 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6437836A true JPS6437836A (en) 1989-02-08

Family

ID=16333210

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19496187A Pending JPS6437836A (en) 1987-08-03 1987-08-03 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6437836A (en)

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