JPS57137472A - Etching method for polycrystalline silicon - Google Patents
Etching method for polycrystalline siliconInfo
- Publication number
- JPS57137472A JPS57137472A JP2197381A JP2197381A JPS57137472A JP S57137472 A JPS57137472 A JP S57137472A JP 2197381 A JP2197381 A JP 2197381A JP 2197381 A JP2197381 A JP 2197381A JP S57137472 A JPS57137472 A JP S57137472A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- etched
- polycrystalline silicon
- etching
- silicon layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain an accurately etched side face having a smoothened corner and a gently inclined plane by subjecting a polycrystalline silicon layer formed on a substrate to isotropic etching and anisotropic etching under the same mask.
CONSTITUTION: A polycrystalline silicon layer 3 is formed on an oxide film 2 formed on a silicon substrate 1. After forming a mask 4 having a prescribed pattern, the layer 3 is isotropically etched to the intermediate part through the mask 4 with an iodine etching soln. or the like. Reactive ion etching is continuously carried out through the mask 4 with gaseous CCl4+O2 or the like to remove the residual part. The ion etching proceeds anisotropically, and the masked part is not etched to give a stepped etched section. This process is suitable for the fine working of an integrated circuit, etc.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2197381A JPS57137472A (en) | 1981-02-17 | 1981-02-17 | Etching method for polycrystalline silicon |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2197381A JPS57137472A (en) | 1981-02-17 | 1981-02-17 | Etching method for polycrystalline silicon |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57137472A true JPS57137472A (en) | 1982-08-25 |
Family
ID=12069973
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2197381A Pending JPS57137472A (en) | 1981-02-17 | 1981-02-17 | Etching method for polycrystalline silicon |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57137472A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3829015A1 (en) * | 1987-08-28 | 1989-04-06 | Toshiba Kawasaki Kk | Method for producing a semiconductor |
US5409569A (en) * | 1992-09-30 | 1995-04-25 | Alps Electric Co., Ltd. | Etchant, detergent and device/apparatus manufacturing method |
CN105336602A (en) * | 2014-07-15 | 2016-02-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method of making polycrystalline silicon etch sidewall angle |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5189387A (en) * | 1975-02-03 | 1976-08-05 | ||
JPS5440542A (en) * | 1977-09-07 | 1979-03-30 | Hitachi Ltd | Manufacture of elastic surface-wave device |
JPS54105476A (en) * | 1978-02-06 | 1979-08-18 | Sony Corp | Manufacture of semiconductor device |
-
1981
- 1981-02-17 JP JP2197381A patent/JPS57137472A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5189387A (en) * | 1975-02-03 | 1976-08-05 | ||
JPS5440542A (en) * | 1977-09-07 | 1979-03-30 | Hitachi Ltd | Manufacture of elastic surface-wave device |
JPS54105476A (en) * | 1978-02-06 | 1979-08-18 | Sony Corp | Manufacture of semiconductor device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3829015A1 (en) * | 1987-08-28 | 1989-04-06 | Toshiba Kawasaki Kk | Method for producing a semiconductor |
US5409569A (en) * | 1992-09-30 | 1995-04-25 | Alps Electric Co., Ltd. | Etchant, detergent and device/apparatus manufacturing method |
CN105336602A (en) * | 2014-07-15 | 2016-02-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method of making polycrystalline silicon etch sidewall angle |
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