JPS57137472A - Etching method for polycrystalline silicon - Google Patents

Etching method for polycrystalline silicon

Info

Publication number
JPS57137472A
JPS57137472A JP2197381A JP2197381A JPS57137472A JP S57137472 A JPS57137472 A JP S57137472A JP 2197381 A JP2197381 A JP 2197381A JP 2197381 A JP2197381 A JP 2197381A JP S57137472 A JPS57137472 A JP S57137472A
Authority
JP
Japan
Prior art keywords
mask
etched
polycrystalline silicon
etching
silicon layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2197381A
Other languages
Japanese (ja)
Inventor
Hiroshi Ikejima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2197381A priority Critical patent/JPS57137472A/en
Publication of JPS57137472A publication Critical patent/JPS57137472A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain an accurately etched side face having a smoothened corner and a gently inclined plane by subjecting a polycrystalline silicon layer formed on a substrate to isotropic etching and anisotropic etching under the same mask.
CONSTITUTION: A polycrystalline silicon layer 3 is formed on an oxide film 2 formed on a silicon substrate 1. After forming a mask 4 having a prescribed pattern, the layer 3 is isotropically etched to the intermediate part through the mask 4 with an iodine etching soln. or the like. Reactive ion etching is continuously carried out through the mask 4 with gaseous CCl4+O2 or the like to remove the residual part. The ion etching proceeds anisotropically, and the masked part is not etched to give a stepped etched section. This process is suitable for the fine working of an integrated circuit, etc.
COPYRIGHT: (C)1982,JPO&Japio
JP2197381A 1981-02-17 1981-02-17 Etching method for polycrystalline silicon Pending JPS57137472A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2197381A JPS57137472A (en) 1981-02-17 1981-02-17 Etching method for polycrystalline silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2197381A JPS57137472A (en) 1981-02-17 1981-02-17 Etching method for polycrystalline silicon

Publications (1)

Publication Number Publication Date
JPS57137472A true JPS57137472A (en) 1982-08-25

Family

ID=12069973

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2197381A Pending JPS57137472A (en) 1981-02-17 1981-02-17 Etching method for polycrystalline silicon

Country Status (1)

Country Link
JP (1) JPS57137472A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3829015A1 (en) * 1987-08-28 1989-04-06 Toshiba Kawasaki Kk Method for producing a semiconductor
US5409569A (en) * 1992-09-30 1995-04-25 Alps Electric Co., Ltd. Etchant, detergent and device/apparatus manufacturing method
CN105336602A (en) * 2014-07-15 2016-02-17 北京北方微电子基地设备工艺研究中心有限责任公司 Method of making polycrystalline silicon etch sidewall angle

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5189387A (en) * 1975-02-03 1976-08-05
JPS5440542A (en) * 1977-09-07 1979-03-30 Hitachi Ltd Manufacture of elastic surface-wave device
JPS54105476A (en) * 1978-02-06 1979-08-18 Sony Corp Manufacture of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5189387A (en) * 1975-02-03 1976-08-05
JPS5440542A (en) * 1977-09-07 1979-03-30 Hitachi Ltd Manufacture of elastic surface-wave device
JPS54105476A (en) * 1978-02-06 1979-08-18 Sony Corp Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3829015A1 (en) * 1987-08-28 1989-04-06 Toshiba Kawasaki Kk Method for producing a semiconductor
US5409569A (en) * 1992-09-30 1995-04-25 Alps Electric Co., Ltd. Etchant, detergent and device/apparatus manufacturing method
CN105336602A (en) * 2014-07-15 2016-02-17 北京北方微电子基地设备工艺研究中心有限责任公司 Method of making polycrystalline silicon etch sidewall angle

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