JPS57137473A - Etching method for aluminum film - Google Patents
Etching method for aluminum filmInfo
- Publication number
- JPS57137473A JPS57137473A JP2197581A JP2197581A JPS57137473A JP S57137473 A JPS57137473 A JP S57137473A JP 2197581 A JP2197581 A JP 2197581A JP 2197581 A JP2197581 A JP 2197581A JP S57137473 A JPS57137473 A JP S57137473A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- film
- etched
- etching
- ion etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
Abstract
PURPOSE:To obtain an accurately etched side face having a smoothened corner and a gently inclined plane by subjecting an Al film formed on a substrate to isotropic etching and anisotropic etching under the same mask. CONSTITUTION:An Al film 3 is formed on an oxide film 2 formed on a silicon substrate 1. After forming a mask 4 having a prescribed pattern, the film 3 is isotropically etched to the intermediate part through the mask 4 with an etching soln. such as hot phosphoric acid. Reactive ion etching is continuously carried out through the mask 4 with gaseous CCl4 or BCl2 to remove the residual part. The ion etching proceeds anisotropically, and the masked part is not etched to give a stepped etched section. This process is suitable for the fine working of an integrated circuit, etc.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2197581A JPS57137473A (en) | 1981-02-17 | 1981-02-17 | Etching method for aluminum film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2197581A JPS57137473A (en) | 1981-02-17 | 1981-02-17 | Etching method for aluminum film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57137473A true JPS57137473A (en) | 1982-08-25 |
Family
ID=12070026
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2197581A Pending JPS57137473A (en) | 1981-02-17 | 1981-02-17 | Etching method for aluminum film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57137473A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5923876A (en) * | 1982-07-28 | 1984-02-07 | Hitachi Ltd | Etching method |
-
1981
- 1981-02-17 JP JP2197581A patent/JPS57137473A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5923876A (en) * | 1982-07-28 | 1984-02-07 | Hitachi Ltd | Etching method |
JPS6214636B2 (en) * | 1982-07-28 | 1987-04-03 | Hitachi Ltd |
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