JPS6464215A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6464215A JPS6464215A JP62220675A JP22067587A JPS6464215A JP S6464215 A JPS6464215 A JP S6464215A JP 62220675 A JP62220675 A JP 62220675A JP 22067587 A JP22067587 A JP 22067587A JP S6464215 A JPS6464215 A JP S6464215A
- Authority
- JP
- Japan
- Prior art keywords
- film
- contact hole
- psg
- etching
- psg film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Non-Volatile Memory (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To prevent the intrusion of movable ions in the forming process of a metallic wiring by forming a contact hole by etching a first glass film and an silicon oxide film and leaving a second glass film only on the sidewall of the contact hole by etching the second glass film. CONSTITUTION:A resist film 112 is left selectively, a molybdenum silicide film 111, a PSG film 110, a PSG film 109 and an SiO2 film 102 are etched in succession through dry etching, using the resist film 112 as a mask, thus shaping a contact hole 113. The resist film 112 is removed, and a PSG film 114 is formed through an LPCVD method, and annealed at 900 deg.C in an N2 atmosphere. Consequently, phosphorus is diffused into a substrate 101 in the lower section of the contact hole 113 from the PSG film 114, and a deep junction is shaped in a drain region 107. The PSG film 114 is anisotropic dry-etched, and the PSG film 114 is left only on the sidewall of the contact hole 113.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62220675A JPS6464215A (en) | 1987-09-03 | 1987-09-03 | Manufacture of semiconductor device |
EP88103309A EP0281140B1 (en) | 1987-03-04 | 1988-03-03 | Semiconductor memory device and method for manufacturing the same |
DE88103309T DE3880860T2 (en) | 1987-03-04 | 1988-03-03 | Semiconductor memory device and method for its production. |
KR1019880002226A KR910008988B1 (en) | 1987-03-04 | 1988-03-04 | Semiconductor device and method for manufacturing the same |
US08/623,882 US5679590A (en) | 1987-03-04 | 1996-03-29 | Method for manufacturing contact hole for a nonvolatile semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62220675A JPS6464215A (en) | 1987-09-03 | 1987-09-03 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6464215A true JPS6464215A (en) | 1989-03-10 |
Family
ID=16754702
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62220675A Pending JPS6464215A (en) | 1987-03-04 | 1987-09-03 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6464215A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05206303A (en) * | 1992-01-13 | 1993-08-13 | Nec Corp | Manufacture of semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58166766A (en) * | 1982-03-27 | 1983-10-01 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1987
- 1987-09-03 JP JP62220675A patent/JPS6464215A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58166766A (en) * | 1982-03-27 | 1983-10-01 | Fujitsu Ltd | Manufacture of semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05206303A (en) * | 1992-01-13 | 1993-08-13 | Nec Corp | Manufacture of semiconductor device |
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