JPS6464215A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6464215A
JPS6464215A JP62220675A JP22067587A JPS6464215A JP S6464215 A JPS6464215 A JP S6464215A JP 62220675 A JP62220675 A JP 62220675A JP 22067587 A JP22067587 A JP 22067587A JP S6464215 A JPS6464215 A JP S6464215A
Authority
JP
Japan
Prior art keywords
film
contact hole
psg
etching
psg film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62220675A
Other languages
Japanese (ja)
Inventor
Masaki Sato
Seiichi Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62220675A priority Critical patent/JPS6464215A/en
Priority to EP88103309A priority patent/EP0281140B1/en
Priority to DE88103309T priority patent/DE3880860T2/en
Priority to KR1019880002226A priority patent/KR910008988B1/en
Publication of JPS6464215A publication Critical patent/JPS6464215A/en
Priority to US08/623,882 priority patent/US5679590A/en
Pending legal-status Critical Current

Links

Landscapes

  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent the intrusion of movable ions in the forming process of a metallic wiring by forming a contact hole by etching a first glass film and an silicon oxide film and leaving a second glass film only on the sidewall of the contact hole by etching the second glass film. CONSTITUTION:A resist film 112 is left selectively, a molybdenum silicide film 111, a PSG film 110, a PSG film 109 and an SiO2 film 102 are etched in succession through dry etching, using the resist film 112 as a mask, thus shaping a contact hole 113. The resist film 112 is removed, and a PSG film 114 is formed through an LPCVD method, and annealed at 900 deg.C in an N2 atmosphere. Consequently, phosphorus is diffused into a substrate 101 in the lower section of the contact hole 113 from the PSG film 114, and a deep junction is shaped in a drain region 107. The PSG film 114 is anisotropic dry-etched, and the PSG film 114 is left only on the sidewall of the contact hole 113.
JP62220675A 1987-03-04 1987-09-03 Manufacture of semiconductor device Pending JPS6464215A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP62220675A JPS6464215A (en) 1987-09-03 1987-09-03 Manufacture of semiconductor device
EP88103309A EP0281140B1 (en) 1987-03-04 1988-03-03 Semiconductor memory device and method for manufacturing the same
DE88103309T DE3880860T2 (en) 1987-03-04 1988-03-03 Semiconductor memory device and method for its production.
KR1019880002226A KR910008988B1 (en) 1987-03-04 1988-03-04 Semiconductor device and method for manufacturing the same
US08/623,882 US5679590A (en) 1987-03-04 1996-03-29 Method for manufacturing contact hole for a nonvolatile semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62220675A JPS6464215A (en) 1987-09-03 1987-09-03 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6464215A true JPS6464215A (en) 1989-03-10

Family

ID=16754702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62220675A Pending JPS6464215A (en) 1987-03-04 1987-09-03 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6464215A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05206303A (en) * 1992-01-13 1993-08-13 Nec Corp Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58166766A (en) * 1982-03-27 1983-10-01 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58166766A (en) * 1982-03-27 1983-10-01 Fujitsu Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05206303A (en) * 1992-01-13 1993-08-13 Nec Corp Manufacture of semiconductor device

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