JPS6451660A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6451660A
JPS6451660A JP20841087A JP20841087A JPS6451660A JP S6451660 A JPS6451660 A JP S6451660A JP 20841087 A JP20841087 A JP 20841087A JP 20841087 A JP20841087 A JP 20841087A JP S6451660 A JPS6451660 A JP S6451660A
Authority
JP
Japan
Prior art keywords
film
opening section
nsg
nitride film
shaped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20841087A
Other languages
Japanese (ja)
Inventor
Keimei Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP20841087A priority Critical patent/JPS6451660A/en
Publication of JPS6451660A publication Critical patent/JPS6451660A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To obtain a bipolar type integrated circuit, which has a small element area and in which no electrical short circuit is generated due to the formation of a wiring between an emitter and a base, by forming an NSG film onto the sidewall of an opening section in an electrode leading-out region. CONSTITUTION:A protective oxide film 15 is shaped in a transistor forming predetermined region in a semiconductor substrate, and a nitride film 18 is formed onto the film 15. An opening section is shaped in impurity introduction predetermined regions in said protective oxide film 15 and nitride film 18. An impurity is introduced into the semiconductor substrate through an ion implantation method through said opening section, using said protective oxide film 15 and nitride film 18 as masks. An NSG film 28 is formed onto said nitride film 18 and into said opening section. Said NSG film 28 is anisotropic dry-etched, and an electrode 29 leading-out region is formed, leaving only the NSG film 28 on the sidewall of said opening section. Accordingly, NSG sidewall films in each region are shaped in a self-alignment manner by one photo-masks, and a bipolar type integrated circuit, which has a small element area, in which no electrical short circuit is generated due to the formation of a wiring be tween an emitter and a base and which is operated at high speed, can be manufactured.
JP20841087A 1987-08-22 1987-08-22 Manufacture of semiconductor device Pending JPS6451660A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20841087A JPS6451660A (en) 1987-08-22 1987-08-22 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20841087A JPS6451660A (en) 1987-08-22 1987-08-22 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6451660A true JPS6451660A (en) 1989-02-27

Family

ID=16555777

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20841087A Pending JPS6451660A (en) 1987-08-22 1987-08-22 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6451660A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02194533A (en) * 1989-01-23 1990-08-01 Rohm Co Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02194533A (en) * 1989-01-23 1990-08-01 Rohm Co Ltd Manufacture of semiconductor device

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