JPS6451660A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6451660A JPS6451660A JP20841087A JP20841087A JPS6451660A JP S6451660 A JPS6451660 A JP S6451660A JP 20841087 A JP20841087 A JP 20841087A JP 20841087 A JP20841087 A JP 20841087A JP S6451660 A JPS6451660 A JP S6451660A
- Authority
- JP
- Japan
- Prior art keywords
- film
- opening section
- nsg
- nitride film
- shaped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To obtain a bipolar type integrated circuit, which has a small element area and in which no electrical short circuit is generated due to the formation of a wiring between an emitter and a base, by forming an NSG film onto the sidewall of an opening section in an electrode leading-out region. CONSTITUTION:A protective oxide film 15 is shaped in a transistor forming predetermined region in a semiconductor substrate, and a nitride film 18 is formed onto the film 15. An opening section is shaped in impurity introduction predetermined regions in said protective oxide film 15 and nitride film 18. An impurity is introduced into the semiconductor substrate through an ion implantation method through said opening section, using said protective oxide film 15 and nitride film 18 as masks. An NSG film 28 is formed onto said nitride film 18 and into said opening section. Said NSG film 28 is anisotropic dry-etched, and an electrode 29 leading-out region is formed, leaving only the NSG film 28 on the sidewall of said opening section. Accordingly, NSG sidewall films in each region are shaped in a self-alignment manner by one photo-masks, and a bipolar type integrated circuit, which has a small element area, in which no electrical short circuit is generated due to the formation of a wiring be tween an emitter and a base and which is operated at high speed, can be manufactured.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20841087A JPS6451660A (en) | 1987-08-22 | 1987-08-22 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20841087A JPS6451660A (en) | 1987-08-22 | 1987-08-22 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6451660A true JPS6451660A (en) | 1989-02-27 |
Family
ID=16555777
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20841087A Pending JPS6451660A (en) | 1987-08-22 | 1987-08-22 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6451660A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02194533A (en) * | 1989-01-23 | 1990-08-01 | Rohm Co Ltd | Manufacture of semiconductor device |
-
1987
- 1987-08-22 JP JP20841087A patent/JPS6451660A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02194533A (en) * | 1989-01-23 | 1990-08-01 | Rohm Co Ltd | Manufacture of semiconductor device |
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