JPS6449269A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6449269A JPS6449269A JP20674187A JP20674187A JPS6449269A JP S6449269 A JPS6449269 A JP S6449269A JP 20674187 A JP20674187 A JP 20674187A JP 20674187 A JP20674187 A JP 20674187A JP S6449269 A JPS6449269 A JP S6449269A
- Authority
- JP
- Japan
- Prior art keywords
- ions
- phosphorus
- implanted
- phosphorous
- tin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 150000002500 ions Chemical class 0.000 abstract 5
- 239000012535 impurity Substances 0.000 abstract 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 2
- 230000005465 channeling Effects 0.000 abstract 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 abstract 2
- 230000007935 neutral effect Effects 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000001312 dry etching Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Abstract
PURPOSE:To improve the characteristic of a transistor by a method wherein ions of tin which are electrically neutral are implanted before an n<-> impurity is formed and an upper part of a phosphorus-doped polysilicon gate electrode is made to be amorphous in order to prevent a channeling phenomenon of ions of phosphorus. CONSTITUTION:A field oxide film 2 and a gate oxide film 3 are formed on a p-type silicon substrate 1; phosphorus-doped polysilicon is grown thereon. A gate electrode 4 is formed by a dry-etching operation. Ions of tin which are electrically neutral are implanted at 200KeV; an amorphous layer 5 is formed on the electrode 4. Ions of phosphorous as n<-> impurities are implanted; n<-> impurity regions 6 are formed. By this setup, it is made possible to prevent a channeling phenomenon of the ions of phosphorous; whereby the characteristic of a transistor can be improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20674187A JPS6449269A (en) | 1987-08-20 | 1987-08-20 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20674187A JPS6449269A (en) | 1987-08-20 | 1987-08-20 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6449269A true JPS6449269A (en) | 1989-02-23 |
Family
ID=16528333
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20674187A Pending JPS6449269A (en) | 1987-08-20 | 1987-08-20 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6449269A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5652156A (en) * | 1995-04-10 | 1997-07-29 | Taiwan Semiconductor Manufacturing Company Ltd. | Layered polysilicon deposition method |
| JP2002217123A (en) * | 2001-01-18 | 2002-08-02 | Sony Corp | Ion implantation method |
-
1987
- 1987-08-20 JP JP20674187A patent/JPS6449269A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5652156A (en) * | 1995-04-10 | 1997-07-29 | Taiwan Semiconductor Manufacturing Company Ltd. | Layered polysilicon deposition method |
| JP2002217123A (en) * | 2001-01-18 | 2002-08-02 | Sony Corp | Ion implantation method |
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