JPS56115558A - Semiconductor integrated circuit and manufacture thereof - Google Patents
Semiconductor integrated circuit and manufacture thereofInfo
- Publication number
- JPS56115558A JPS56115558A JP1949280A JP1949280A JPS56115558A JP S56115558 A JPS56115558 A JP S56115558A JP 1949280 A JP1949280 A JP 1949280A JP 1949280 A JP1949280 A JP 1949280A JP S56115558 A JPS56115558 A JP S56115558A
- Authority
- JP
- Japan
- Prior art keywords
- region
- crystallinity
- insular
- thin film
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 abstract 3
- 239000010408 film Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To simply form a high performance and density IC by forming semiconductor thin film insular regions having different crystallinity on an insulator, forming an active element on the region having preferable crystallinity and a resistor on the region having worse crystallinity, and wiring therebetween. CONSTITUTION:An insulating film 2 is covered on the Si substrate 1, and the polycrystalline Si thin film 3 is formed on the entire surface. The thin film 3 is partly selectively removed to form insular regions 4, 5. A laser beam is irradiated only to the insular region 4, and an insular region 4' improved in the crystallinity is formed. It may also be monocrystallized. An MOSTr becoming a driver for an inverter is formed in the insular region 4' having preferable crystallinity, impurity ions are injected to the region 5 having worse crystallinity to form a resistor 13, and they are wired. Thus, high performance and high density resistance load type MOS device can be formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1949280A JPS56115558A (en) | 1980-02-18 | 1980-02-18 | Semiconductor integrated circuit and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1949280A JPS56115558A (en) | 1980-02-18 | 1980-02-18 | Semiconductor integrated circuit and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56115558A true JPS56115558A (en) | 1981-09-10 |
Family
ID=12000852
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1949280A Pending JPS56115558A (en) | 1980-02-18 | 1980-02-18 | Semiconductor integrated circuit and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56115558A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5877253A (en) * | 1981-10-19 | 1983-05-10 | インテル・コーポレーシヨン | Integrated circuit resistor and method of producing same |
US5077233A (en) * | 1984-10-09 | 1991-12-31 | Fujitsu Limited | Method for recrystallizing specified portions of a non-crystalline semiconductor material to fabricate a semiconductor device therein |
JPH078496B2 (en) * | 1987-09-04 | 1995-02-01 | アウトマティック・アパラーテ・マシーネンバウ・ゲゼルシャフト・ミット・ベシュレンクタ・ハフツング | Equipment for cooling and granulating extrudates of thermoplastic materials |
JP2013008988A (en) * | 2010-02-05 | 2013-01-10 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
JPWO2012029915A1 (en) * | 2010-09-02 | 2013-10-31 | シャープ株式会社 | Transistor circuit, flip-flop, signal processing circuit, driver circuit, and display device |
-
1980
- 1980-02-18 JP JP1949280A patent/JPS56115558A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5877253A (en) * | 1981-10-19 | 1983-05-10 | インテル・コーポレーシヨン | Integrated circuit resistor and method of producing same |
JPH0468786B2 (en) * | 1981-10-19 | 1992-11-04 | Intel Corp | |
US5077233A (en) * | 1984-10-09 | 1991-12-31 | Fujitsu Limited | Method for recrystallizing specified portions of a non-crystalline semiconductor material to fabricate a semiconductor device therein |
JPH078496B2 (en) * | 1987-09-04 | 1995-02-01 | アウトマティック・アパラーテ・マシーネンバウ・ゲゼルシャフト・ミット・ベシュレンクタ・ハフツング | Equipment for cooling and granulating extrudates of thermoplastic materials |
JP2013008988A (en) * | 2010-02-05 | 2013-01-10 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
JPWO2012029915A1 (en) * | 2010-09-02 | 2013-10-31 | シャープ株式会社 | Transistor circuit, flip-flop, signal processing circuit, driver circuit, and display device |
JP5579855B2 (en) * | 2010-09-02 | 2014-08-27 | シャープ株式会社 | Transistor circuit, flip-flop, signal processing circuit, driver circuit, and display device |
US9030237B2 (en) | 2010-09-02 | 2015-05-12 | Sharp Kabushiki Kaisha | Transistor circuit, flip-flop, signal processing circuit, driver circuit, and display device |
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