JPS5516456A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5516456A
JPS5516456A JP8948378A JP8948378A JPS5516456A JP S5516456 A JPS5516456 A JP S5516456A JP 8948378 A JP8948378 A JP 8948378A JP 8948378 A JP8948378 A JP 8948378A JP S5516456 A JPS5516456 A JP S5516456A
Authority
JP
Japan
Prior art keywords
area
layer
type
integrated circuit
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8948378A
Other languages
Japanese (ja)
Other versions
JPS5750060B2 (en
Inventor
Kotaro Kato
Yoshikazu Hosokawa
Tatsuya Kamei
Takuzo Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Original Assignee
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Nippon Telegraph and Telephone Corp filed Critical Hitachi Ltd
Priority to JP8948378A priority Critical patent/JPS5516456A/en
Publication of JPS5516456A publication Critical patent/JPS5516456A/en
Publication of JPS5750060B2 publication Critical patent/JPS5750060B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE: To effect the high voltage resistance without making the semiconductor integrated circuit larger in size by producing no reversion layer or depletion layer at the island area adjacent to the insulation film.
CONSTITUTION: At the time of forming a n-type area 13c on a supporting area 11, a n+-type conductive area 11a is formed via the opening provided through a SiO2 film 14. An A° wiring 15x is connected to the n+-type area 11a in ohmic contact. To the A° wiring 15x applied is the maximum potential. By doing so, the supporting area 11 becomes to have the maximum potential and then the potential at a n- type area 13b of the island area 13 becomes lower than that. This enables to produce no field effect and no reversion layer or depletion layer at the portion adjacent to a insulation layer 12.
COPYRIGHT: (C)1980,JPO&Japio
JP8948378A 1978-07-24 1978-07-24 Semiconductor integrated circuit Granted JPS5516456A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8948378A JPS5516456A (en) 1978-07-24 1978-07-24 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8948378A JPS5516456A (en) 1978-07-24 1978-07-24 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS5516456A true JPS5516456A (en) 1980-02-05
JPS5750060B2 JPS5750060B2 (en) 1982-10-25

Family

ID=13971976

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8948378A Granted JPS5516456A (en) 1978-07-24 1978-07-24 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5516456A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04336446A (en) * 1991-05-13 1992-11-24 Toshiba Corp Using method for semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6262260U (en) * 1985-10-05 1987-04-17

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04336446A (en) * 1991-05-13 1992-11-24 Toshiba Corp Using method for semiconductor device

Also Published As

Publication number Publication date
JPS5750060B2 (en) 1982-10-25

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