JPS5539412A - Insulating gate field effect transistor integrated circuit and its manufacture - Google Patents

Insulating gate field effect transistor integrated circuit and its manufacture

Info

Publication number
JPS5539412A
JPS5539412A JP11172478A JP11172478A JPS5539412A JP S5539412 A JPS5539412 A JP S5539412A JP 11172478 A JP11172478 A JP 11172478A JP 11172478 A JP11172478 A JP 11172478A JP S5539412 A JPS5539412 A JP S5539412A
Authority
JP
Japan
Prior art keywords
film
substrate
integrated circuit
poly
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11172478A
Other languages
Japanese (ja)
Inventor
Osamu Yamashiro
Kanji Yo
Kotaro Nishimura
Kazutaka Narita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11172478A priority Critical patent/JPS5539412A/en
Priority to CH1621/79A priority patent/CH657712A5/en
Priority to IT20368/79A priority patent/IT1111987B/en
Priority to FR7904226A priority patent/FR2447036B1/en
Priority to DE19792906527 priority patent/DE2906527A1/en
Priority to DE2954543A priority patent/DE2954543C2/de
Priority to NL7901335A priority patent/NL7901335A/en
Priority to CA000321955A priority patent/CA1149081A/en
Priority to GB8119560A priority patent/GB2081015B/en
Priority to GB8119562A priority patent/GB2081458B/en
Priority to GB8119559A priority patent/GB2081014B/en
Priority to GB8119561A priority patent/GB2100540B/en
Priority to GB7907817A priority patent/GB2016801B/en
Publication of JPS5539412A publication Critical patent/JPS5539412A/en
Priority to CA000395813A priority patent/CA1143010A/en
Priority to CA000395810A priority patent/CA1154880A/en
Priority to CA000395812A priority patent/CA1146223A/en
Priority to CA000395811A priority patent/CA1145063A/en
Priority to HK80/84A priority patent/HK8084A/en
Priority to SG41584A priority patent/SG41584G/en
Priority to SG41684A priority patent/SG41684G/en
Priority to SG417/84A priority patent/SG41784G/en
Priority to MY1984375A priority patent/MY8400375A/en
Priority to CH1928/85A priority patent/CH672391B5/en
Priority to HK364/85A priority patent/HK36485A/en
Priority to HK363/85A priority patent/HK36385A/en
Priority to HK351/85A priority patent/HK35185A/en
Priority to MY671/85A priority patent/MY8500671A/en
Priority to MY672/85A priority patent/MY8500672A/en
Priority to MY658/85A priority patent/MY8500658A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00369—Modifications for compensating variations of temperature, supply voltage or other physical parameters
    • H03K19/00384—Modifications for compensating variations of temperature, supply voltage or other physical parameters in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/347—DC amplifiers in which all stages are DC-coupled with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/023—Generators characterised by the type of circuit or by the means used for producing pulses by the use of differential amplifiers or comparators, with internal or external positive feedback
    • H03K3/0233—Bistable circuits
    • H03K3/02337—Bistables with hysteresis, e.g. Schmitt trigger

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a reference voltage generator which is formed into an integrated circuit in a high accuracy. CONSTITUTION:Heat oxide film 102 is formed on the surface of semiconductor substrate 101, and then etched at the area where the MISFET is formed to form gate oxide film 103. Then film 103 is etched selectively at the area having a contact to the poly Si-layer to form contact hole 103a. The Si is deposited through the CVD method on the entire main surface of substrate 101 to form polycrystal Si-layer 104 for the selective etching. Thus the SiO2 film is formed on the entire main surface of substrate 101 through the CVD method, and SiO2 film 105 is left behind selectively only on the poly-crystal Si-layer at the high resistance part and instrinsic level gate part 104a. Then the phosphorus is diffused within substrate 101 to form gata electrode 104b, contact part 104c and poly-crystal Si wiring part 104d each. And both the PSG film and the Al film are formed on the entire surface of substrate 101, and then the Al film is etched selectively to form the wiring region. Thus the desired device can be obtained.
JP11172478A 1978-03-08 1978-09-13 Insulating gate field effect transistor integrated circuit and its manufacture Pending JPS5539412A (en)

Priority Applications (29)

Application Number Priority Date Filing Date Title
JP11172478A JPS5539412A (en) 1978-09-13 1978-09-13 Insulating gate field effect transistor integrated circuit and its manufacture
CH1621/79A CH657712A5 (en) 1978-03-08 1979-02-19 REFERENCE VOLTAGE GENERATOR.
IT20368/79A IT1111987B (en) 1978-03-08 1979-02-20 REFERENCE VOLTAGE GENERATOR DEVICE
FR7904226A FR2447036B1 (en) 1978-03-08 1979-02-20 REFERENCE VOLTAGE GENERATOR
DE19792906527 DE2906527A1 (en) 1978-03-08 1979-02-20 REFERENCE VOLTAGE GENERATOR
DE2954543A DE2954543C2 (en) 1978-03-08 1979-02-20
NL7901335A NL7901335A (en) 1978-03-08 1979-02-20 GENERATOR FOR A REFERENCE VOLTAGE.
CA000321955A CA1149081A (en) 1978-03-08 1979-02-20 Reference voltage generator device
GB8119560A GB2081015B (en) 1978-03-08 1979-03-06 Improvements in the manufacture of semiconductor devices
GB8119562A GB2081458B (en) 1978-03-08 1979-03-06 Voltage comparitors
GB8119559A GB2081014B (en) 1978-03-08 1979-03-06 Improvements in the manufacture of semiconductor devices
GB8119561A GB2100540B (en) 1978-03-08 1979-03-06 Reference voltage generators
GB7907817A GB2016801B (en) 1978-03-08 1979-03-06 Referenc voltage generating device
CA000395810A CA1154880A (en) 1978-03-08 1982-02-08 Reference voltage generator device
CA000395811A CA1145063A (en) 1978-03-08 1982-02-08 Reference voltage generator device
CA000395813A CA1143010A (en) 1978-03-08 1982-02-08 Reference voltage generator device
CA000395812A CA1146223A (en) 1978-03-08 1982-02-08 Battery checker
HK80/84A HK8084A (en) 1978-03-08 1984-01-24 A battery checker
SG41584A SG41584G (en) 1978-03-08 1984-06-04 Reference voltage generating device
SG41684A SG41684G (en) 1978-03-08 1984-06-04 Improvements in the manufacture of a semiconductor device
SG417/84A SG41784G (en) 1978-03-08 1984-06-04 Reference voltage generating device
MY1984375A MY8400375A (en) 1978-03-08 1984-12-31 A battery checker
CH1928/85A CH672391B5 (en) 1978-03-08 1985-02-19 REFERENCE VOLTAGE GENERATOR.
HK364/85A HK36485A (en) 1978-03-08 1985-05-09 Reference voltage generating device
HK351/85A HK35185A (en) 1978-03-08 1985-05-09 Reference voltage generating device
HK363/85A HK36385A (en) 1978-03-08 1985-05-09 Improvements in the manufacture of a semiconductor device
MY671/85A MY8500671A (en) 1978-03-08 1985-12-30 Reference voltage generating device
MY672/85A MY8500672A (en) 1978-03-08 1985-12-30 Reference voltage generating device
MY658/85A MY8500658A (en) 1978-03-08 1985-12-30 Reference voltage generating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11172478A JPS5539412A (en) 1978-09-13 1978-09-13 Insulating gate field effect transistor integrated circuit and its manufacture

Related Child Applications (8)

Application Number Title Priority Date Filing Date
JP59222167A Division JPS60242668A (en) 1984-10-24 1984-10-24 Manufacture of insulated gate type field-effect semiconductor device
JP22217284A Division JPS60243717A (en) 1984-10-24 1984-10-24 Voltage regulator
JP22217184A Division JPS60243716A (en) 1984-10-24 1984-10-24 Voltage regulator
JP59222166A Division JPS60242664A (en) 1984-10-24 1984-10-24 Manufacture of insulated gate type field-effect semiconductor device
JP59222173A Division JPS60143012A (en) 1984-10-24 1984-10-24 Semiconductor integrated circuit device
JP59222170A Division JPS60143011A (en) 1984-10-24 1984-10-24 Semiconductor integrated circuit device
JP59222168A Division JPS60242675A (en) 1984-10-24 1984-10-24 Manufacture of insulated gate type field-effect semiconductor device
JP59222169A Division JPS60242658A (en) 1984-10-24 1984-10-24 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5539412A true JPS5539412A (en) 1980-03-19

Family

ID=14568549

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11172478A Pending JPS5539412A (en) 1978-03-08 1978-09-13 Insulating gate field effect transistor integrated circuit and its manufacture

Country Status (1)

Country Link
JP (1) JPS5539412A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59107560A (en) * 1982-12-13 1984-06-21 Hitachi Ltd Semiconductor integrated circuit device
US5384740A (en) * 1992-12-24 1995-01-24 Hitachi, Ltd. Reference voltage generator
US10560056B2 (en) 2012-04-11 2020-02-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4952980A (en) * 1972-09-22 1974-05-23
JPS51149780A (en) * 1975-06-16 1976-12-22 Hewlett Packard Yokogawa Standard voltage generator
JPS52122856A (en) * 1976-04-07 1977-10-15 Hewlett Packard Yokogawa Standard voltage generator

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4952980A (en) * 1972-09-22 1974-05-23
JPS51149780A (en) * 1975-06-16 1976-12-22 Hewlett Packard Yokogawa Standard voltage generator
JPS52122856A (en) * 1976-04-07 1977-10-15 Hewlett Packard Yokogawa Standard voltage generator

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59107560A (en) * 1982-12-13 1984-06-21 Hitachi Ltd Semiconductor integrated circuit device
JPH058584B2 (en) * 1982-12-13 1993-02-02 Hitachi Ltd
US5384740A (en) * 1992-12-24 1995-01-24 Hitachi, Ltd. Reference voltage generator
US10560056B2 (en) 2012-04-11 2020-02-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11316478B2 (en) 2012-04-11 2022-04-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device outputting reference voltage
DE102013206284B4 (en) 2012-04-11 2023-07-06 Semiconductor Energy Laboratory Co., Ltd. semiconductor device

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